FAST RECOVERY RECTIFIER DIODE, 30A ,DO-4 PACKAGE Search Results

IRF035

Abstract: IRF034
Contextual Info: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package

Contextual Info: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current

Contextual Info: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.

Contextual Info: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride

HFA16PB120

Abstract: HFA30PB120 IRFP250
Contextual Info: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and

HFA16PB120

Abstract: IRFP250 HFA30PB120PBF
Contextual Info: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI

A7321

Abstract: marking 2U diode diode 2U 88
Contextual Info: PD - 9.905A International IQR Rectifier IR L Z 3 4 S /L HEXFET Power MOSFET Advanced Process Technology Surface M ount IRLZ34S Low -profile through-hole (IRLZ34L) 1 75 °C O perating Tem perature Fast Switching Fully Avalanche Rated V dss = 60 V R d s (oh) = 0 .0 5 0 Î2

Contextual Info: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is

HFA30TA60C

Abstract: HFA16TA60C IRFP250 vishay transistor date code dt2 marking code
Contextual Info: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI

HFA15TB60S

Abstract: IRFP250
Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free

HFA16TA60C

Abstract: HFA30TA60C
Contextual Info: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI

ST hexfet to 247

Abstract: anode common fast recovery diode 15A 200V HFA30PA60C
Contextual Info: Bulletin PD -2.336 rev. C 05/01 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.2V IF(AV) = 15A Qrr (typ.)= 80nC

HFA15PB60

Abstract: 94052 IRFP250
Contextual Info: PD - 95681A HFA15PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 CATHODE • Reduced RFI and EMI

IR HFA15TB60

Contextual Info: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC

AN-994

Abstract: IRFZ34 IRFZ34L IRFZ34S
Contextual Info: PD - 9.892A IRFZ34S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ34S Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description Third Generation HEXFETs from International Rectifier

"Power Diode" 200V 30A

Abstract: HFA30TA60CS IRFP250 93092
Contextual Info: Bulletin PD-20374 01/01 HFA30TA60CS HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V 2 Features • • • • • VF typ. * = 1.2V IF(AV) = 15A Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Qrr (typ.)= 80nC

HFA15TB60PBF

Abstract: HFA15TB60 HFA06TB120 HFA15TB60-1 IRFP250 vishay transistor date code IR HFA15TB60
Contextual Info: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs

HFA30TA60CS

Abstract: IRFP250 hfa30ta60cspbf
Contextual Info: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC

HFA15TB60S

Abstract: IRFP250 SMD-220 MAR 618 transistor
Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

AN-994

Abstract: IRLZ34 IRLZ34L IRLZ34S
Contextual Info: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description

Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free

N3306

Contextual Info: Fast Recovery Diode FMN-3306S Mar/21/2011 Features Package The FMN-3360S is a fast recovery diode which realize a peak reverse voltage of 600V and a typical forward voltage drop of 1.15V optimizing a tradeoff between VF and trr. It has the characteristics suit for PFC circuit of