FAST RECOVERY DIODE 400V 5A Search Results
FAST RECOVERY DIODE 400V 5A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CS-USB2AMBMMC-001 |
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Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') | |||
CS-USB2AMBMMC-002 |
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Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') | |||
CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet |
FAST RECOVERY DIODE 400V 5A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 • • • • • Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time – trr <35ns. High Voltage 400V. Hermetic Ceramic Surface Mount Package. Ideally Suited For Switching Power Supplies, Inverters |
Original |
BYV34-400MN2 Maximum80Â O-276AB) | |
Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 • • • • • Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time – trr <35ns. High Voltage 400V. Hermetic Ceramic Surface Mount Package. Ideally Suited For Switching Power Supplies, Inverters |
Original |
BYV34-400MN2 O-276AB) | |
fast recovery diode 400v 5A
Abstract: BYV34-400MN2 power Diode 400V 20A
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Original |
BYV34-400MN2 O-276AB) fast recovery diode 400v 5A BYV34-400MN2 power Diode 400V 20A | |
50VF30
Abstract: 50VF30F 50VF40 50VF40F
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OCR Scan |
A/300 00V/trr 40nsec 50VF30 50VF40 50VF30F 50VF40F O-251AA O-252AA 50VF40F | |
Contextual Info: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~ 400V/trr : 40nsec FEATURES • TO-251AA Case o TO-252AA Case, Surface Mount Device 0 Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss « High Surge Capability • 100 Volts thru 400 Votls |
OCR Scan |
50VF30 50VF40 50VF30F 50VF40F A/300~ 00V/trr 40nsec O-251AA O-252AA | |
F5KF40Contextual Info: FAST RECOVERY DIODE 5.5A/300 400V/trr:45nsec 5KF30B F5KF30B 5KF40B F5KF40B FEATURES 0 Similar to T0-220AC and TO-220AB Case ‘ Fully Molded Isolation Case F- Type • Ultra - Fast Recovery ° Low Forward Voltage Drop Efficiency ° Low Power Loss, High ° High Surge Capability |
OCR Scan |
T0-220AC O-220AB A/300 00V/trr 45nsec 5KF30B F5KF30B 5KF40B F5KF40B 5KF30 F5KF40 | |
Contextual Info: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300— 400V/trr : 40nsec FEATURES 0 TO-251AA Case » TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery « Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability « 100 Volts thru 400 Votls |
OCR Scan |
O-251AA O-252AA A/300-- 00V/trr 40nsec 50VF30 50VF40 50VF30F 50VF40F | |
10C2
Abstract: ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2
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OCR Scan |
5GUZ47 100ns 961001EAA2' 10C2 ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2 | |
30KF40B
Abstract: 30KF40E 30KF30B 30KF30E
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OCR Scan |
00V/t 60nsec 30KF30E 30KF40E 30KF30B 30KF40B O-247AC 30KF--E 30KF40B | |
Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC40 400V 5A HSS'iX > trr50n s >SRS;H >^BsOAw0, ^ m iB s FA RATINGS Absolute Maximum Ratings a a i s E -fS y m b o l C o n d it io n s It e m Storage Temperature Operating Junction Temperature |
OCR Scan |
D5LC40 trr50n 50HziE5K J515-5 | |
fast recovery diode 400v 5AContextual Info: □ -□ 7 . V'CX-Y- Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS SF5LC40 400V 5A m y 't'X >trr50ns >7 ,llÆ-,lbK > $ È jfIÎJ± 2 kV ffilI >SRSÜ >^BsOAw0, ^ K H s . FA RATINGS Absolute Maximum Ratings a a i E -f- Item 5 Tc = 25°C BH - - — |
OCR Scan |
SF5LC40 trr50ns 50HziE5K J515-5 fast recovery diode 400v 5A | |
Contextual Info: g g y 2 ^ ^ SILICON EPITAXIAL TYPE SUPER FAST RECOVERY DIODE U n i t in m m SWITCHING TYPE POWER SUPPLY APPLICATION. 1 0.3 MAX CONVERTER & CHOPPER APPLICATION. ‘ • Repetitive Peak Reverse Voltage : V rj {j{=400V • Average Output Rectified Current : I o = 5A |
OCR Scan |
100ns | |
Contextual Info: TO SHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 U nit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3 M A X. = 400V • Repetitive Peak Reverse Voltage V • Average Output Rectified Current |
OCR Scan |
5GUZ47 100ns 961001EAA2' | |
F5LC40Contextual Info: Super Fast Recovery Diode Twin Diode O U T L IN E SF5LC40 Weight 1.9« T yp 10 o ^ * !> X W ) 400V 5A Date code Feature Control No. •i& y 'fx • Low Noise • trr=50ns • tnr=50ns • 711^-10 K • Full Molded am*} • Dielectric Strength 2kV 2kV ( S II |
OCR Scan |
SF5LC40 F5LC40 110ms J533-1) F5LC40 | |
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e5lc
Abstract: C475N
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OCR Scan |
DE5LC40 20//m e5lc C475N | |
fast recovery diode 400v 5A
Abstract: YG226S4
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Original |
YG226S4 13Min SC-67 fast recovery diode 400v 5A YG226S4 | |
Contextual Info: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design |
Original |
YG226S4 13Min SC-67 | |
YG339N4Contextual Info: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2 |
Original |
YG339C4 13Min SC-67 YG339C4 YG339N4 YG339D4 YG339N4 | |
fast recovery diode 400v 5AContextual Info: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design |
Original |
YG226S4 13Min SC-67 fast recovery diode 400v 5A | |
Contextual Info: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2 |
Original |
YG339C4 13Min SC-67 YG339N4 YG339D4 | |
Contextual Info: — K ïÎ'n .— i> Diode Module n - n x V 'C X - Y - Super Fast Recovery Diode OUTLINE DIMENSIONS D120LC40 400V 120A > t r r l 00n s > F A s D 7 tt'iy h RATINGS Absolute Maximum Ratings a a Ite m Storage Temperature m &nm m Operating Junction Temperature |
OCR Scan |
D120LC40 J515-5 | |
YG339C4
Abstract: YG339D4 YG339N4
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Original |
YG339C4 13Min SC-67 YG339C4 YG339N4 YG339D4 YG339D4 YG339N4 | |
SHINDENGEN DIODEContextual Info: n - n z f i t - K yO S Twin Diode Super Fast Recovery Diode OUTLINE DIMENSIONS D5LC40 Case : ITO220 400V 5A • ß y -rx # trr5 0 n s •S R S S OA. STO • a « , « is . fa • Æ tè ü rn RATINGS •¡fe ê Î'jlf^A E ltë m Item Absolute Maximum Ratings |
OCR Scan |
D5LC40 ITO220 SHINDENGEN DIODE | |
700-FSM
Abstract: PF10
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Original |
ESAC39 O-220AB SC-46 ESAC39C ESAC39- et-04 cur140 700-FSM PF10 |