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    FAST APPLICATIONS HANDBOOK Search Results

    FAST APPLICATIONS HANDBOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001
    		Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') PDF
    CS-USB2AMBMMC-002
    		Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') PDF
    CA3059
    		Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications PDF Buy
    CA3059-G
    		Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications PDF Buy
    CA3079
    		Rochester Electronics LLC CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications PDF Buy

    FAST APPLICATIONS HANDBOOK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CMF04

    Contextual Info: CMF04 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF04 Unit: mm High Speed Rectifier Applications Fast Recovery Switching Mode Power Supply Applications DC/DC Converter Applications • • • • Repetitive peak reverse voltage: VRRM = 800 V Average forward current: IF (AV) = 0.5 A


    Original     		CMF04 CMF04 PDF

    15j321

    Abstract: TRANSISTOR 15J321 2-10R1C GT15J321 RG300A
    Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 s (typ.


    Original     		GT15J321 15j321 TRANSISTOR 15J321 2-10R1C GT15J321 RG300A PDF

    TRANSISTOR 15J321

    Abstract: 15j321 RG105
    Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		GT15J321 TRANSISTOR 15J321 15j321 RG105 PDF

    15j321

    Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
    Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		GT15J321 15j321 TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a PDF

    Contextual Info: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT10J321 PDF

    GT50J325

    Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 GT50J325 PDF

    GT50J121

    Abstract: GT50J325
    Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J121 GT50J121 GT50J325 PDF

    GT50J325

    Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 GT50J325 PDF

    GT30J121

    Abstract: GT30J324 ic604 IGBT GT30J121
    Contextual Info: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT30J121 GT30J121 GT30J324 ic604 IGBT GT30J121 PDF

    GT50J325

    Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 GT50J325 PDF

    GT30J324

    Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation · Enhancement-mode · Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT30J324 GT30J324 PDF

    Contextual Info: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)


    Original     		GT30J126 PDF

    gt10j321

    Abstract: 2-10R1C
    Contextual Info: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT10J321 gt10j321 2-10R1C PDF

    Contextual Info: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT20J321 PDF

    GT30J324

    Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT30J324 GT30J324 PDF

    Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 PDF

    gt20j321 equivalent

    Abstract: 2-10R1C GT20J321
    Contextual Info: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT20J321 gt20j321 equivalent 2-10R1C GT20J321 PDF

    GT30J324

    Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT30J324 GT30J324 PDF

    K2662

    Abstract: gt10j321 2-10R1C
    Contextual Info: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT10J321 K2662 gt10j321 2-10R1C PDF

    Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J121 PDF

    GT30J324

    Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT30J324 GT30J324 PDF

    gt50j325

    Abstract: GT50J325 Toshiba
    Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT50J325 gt50j325 GT50J325 Toshiba PDF

    GT30J121

    Abstract: GT30J324
    Contextual Info: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT30J121 GT30J121 GT30J324 PDF

    IGBT GT30J121

    Abstract: GT30J121 GT30J324
    Contextual Info: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		GT30J121 IGBT GT30J121 GT30J121 GT30J324 PDF