FAST APPLICATIONS HANDBOOK Search Results

TRANSISTOR 15J321

Abstract: 15j321 RG105
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.

15j321

Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.

Contextual Info: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)

GT50J325

Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT50J121

Abstract: GT50J325
Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT50J325

Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT30J121

Abstract: GT30J324 ic604 IGBT GT30J121
Contextual Info: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)

GT50J325

Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT30J324

Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation · Enhancement-mode · Fast switching FS : Operating frequency up to 50 kHz (reference)

GT30J324

Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)

Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

gt20j321 equivalent

Abstract: 2-10R1C GT20J321
Contextual Info: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT30J324

Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)

K2662

Abstract: gt10j321 2-10R1C
Contextual Info: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)

Contextual Info: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)

Contextual Info: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)

transistor equivalent 20j321

Abstract: 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C
Contextual Info: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

W814

Abstract: W820 W830 adsp 21xx fft calculation w849 w842 16 point DIF FFT using radix 4 fft W808 32 point fast Fourier transform using floating point DFT radix
Contextual Info: FAST FOURIER TRANSFORMS SECTION 5 FAST FOURIER TRANSFORMS • The Discrete Fourier Transform ■ The Fast Fourier Transform ■ FFT Hardware Implementation and Benchmarks ■ DSP Requirements for Real Time FFT Applications ■ Spectral Leakage and Windowing

effect of parasitic in capacitors

Contextual Info: BURR - BROW N [ OPA689 ] Wideband, High Gain VOLTAGE LIMITING AMPLIFIER APPLICATIONS FEATURES • FAST RECOVERY FROM OVERDRIVE: 2.4ns TRANSIMPEDANCE WITH FAST OVERDRIVE RECOVERY • LIMITING VOLTAGE ACCURACY: ±15mV FAST LIMITING ADC INPUT DRIVER • -3dB BANDWIDTH G = +6 : 280MHz

siemens C166

Abstract: sIEMENS mcb 8 point fft FFT 1024 point AP-275 C165 C166 MCS-96 SAB-C165 TMS320
Contextual Info: SIEMENS C166 Family ApNotes Software Example #4 Fast-FourierTransformation Fast-Fourier-Transformation The Fast Fourier Transformation FFT is an algorithm frequently used in various applications, like telecommunication, signal and image processing. It transforms the time domain into the frequency

IN3879

Abstract: 1N3879 1N3880 1N3881 1N3882 1N3883 1N3880R
Contextual Info: I 1N3765-68 SEE PAGE 209 Silicon IN3879-83.R I RECTIFIERS FAST RECOVERY Features: • Fast Recovery Time . . . 200 Nanoseconds Maximum • Diffused Construction • For Use i n : — Inverters — Choppers — Low RF Interference Applications — Free-W heeling Rectifier Applications

GT15J321

Abstract: 2-10R1C
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • The 4th generation • FS fast switching • Enhancement-mode • High speed: tf = 0.03 µs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.)

TTL 7400

Abstract: transistor SI 6822 application notes signetics 74LS00 gate fairchild dtl pj 939 diode 7410 IC pj 939 lv bq 8050 ac servo controller schematic
Contextual Info: FAIRCHILD FAST' Applications Handbook A S chlum berger C om pany 1987 Fairchild Semiconductor Corporation, Digital Unit 333 Western Avenue, South Portland, Maine 04106 207/775-8700 TWX 710-221-1980 FAST Fairchild Advanced Schottky TTL is a registered trademark of