FAJ 40 Search Results

GP2522

Abstract: GP2L20R GP2L20L GP2503 GP2524 NJL5143EL NJL5146EA NJL5147EL NJL5161K NJL5162K
Contextual Info: - 33 6 - « S g ít m g n % à’j î-5 n. ! T „ :-2 5 ’C , X. : \ -7 9 - m : 7', = 25C'i Vr ÎJ.f iir fr faj 'L Vu, I f vmA) !Q ' ¡V ) im A i Y' “Ci - 10k 5 45 25 - 2 0 '7 0 I f Ver. VvF. «t I f le t, II m ax !V ï im A i 1mA) typ (¿¿s1 150

Contextual Info: SK 20 DGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$XY QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$XYL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier

Contextual Info: SK 10 BGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter SEMITOP 3 1-phase bridge rectifier +

FAJ 40

Abstract: Diode FAJ Diode FAJ 22 FAJ 42
Contextual Info: SK 10 DGDL 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

FAJ 20 ESD

Abstract: FAJ 20 "IEC 61000" modem 2FAJ-M16R B0412
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

FAJ 20 ESD

Abstract: B0412 F B0412 FAJ ESD FAJ 40 2FAJ-M16R
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

K791

Abstract: Diode FAJ package Diode FAJ Diode FAJ 45
Contextual Info: [ • 9 m iELECIIIIIU GaAs INFRARED EMITTING DIODE 1N626S The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING PILANE -Mh t 11 * Good optica! to m echanical alignment ST1331 e 8, INCHES MILUMETERS MOTES MIN. MAX MAX. MIN. .155 3 53 .616 .407 ,533

FAJ 20 ESD

Abstract: "IEC 61000" modem 2FAJ-M16R B0412
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

ED83127-30

Abstract: BDFB ED83127 power distribution frame ED83127 fuse panel lineage 2000 BDFB FUSES KS21320 J85568D-1 blown fuse indicator with alarm h569-429
Contextual Info: Product Manual J85568D-1 Select Code 157-005-101 Comcode 106991391 Issue 5 March 1998 Lucent Technologies Lineage 2000 Eight-Load BDFB Battery Distribution Fuse Bay and Six-Load PDF (Power Distribution Frame) Notice: Every effort was made to ensure that the information in this

h569-445

Abstract: ED83368-30 CC848846287 BDFB H569445 CC109144812 PBM7900 current monitor panel meter PBM7600FRA 1-800-THE-1PWR
Contextual Info: Smart Distribution Monitor – VIM1 Adding Enhancements to BDFB/BDCBB Management The VIM1 Smart Distribution Monitor replaces the digital meters used on Lineage Power Battery Distribution Fuse Bays BDFB and Battery Distribution Circuit Breaker Bays (BDCBB). Traditional

Contextual Info: KODENSHI 2SE CORP S S M S b Q fl D □ D Q Q 1 7 C1 5 • 4 S ' DIMENSIONS Unit: mm SD-101,102,103 l i , * # 7 1 4 .0 *1 4d:0.1 o^04o +toI o D FEATURES T t x- U j_ • a ta s itta u . 1. 2.54 5 ±0.1 S? o Uin o IS The SD-101,102,103 are position sensors for automatic fo­

ci 4502

Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

1B06A

Abstract: B1326 2SC3353 2SC3353A LR35 npn vce 900v
Contextual Info: Power T ransistors t.R 3 2 flS 2 0 0 1 b 4 2 4 . 2SC3353, 2SC3353A 335 2SC3353, 2SC3353A Silicon NPN Triple-Diffused Junction Mesa Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit I mm 4.4m ax. • Features • High speed switching

IC4427

Abstract: IC4424 Ic1426 IC4425 IC4452 IC4422 MIC4451
Contextual Info: MOSFET Driver Selection Guide MIC4451/4452 1500pF to 62,000pF 12A Peak Output 0.8£2 O utput Im pedance 25ns into 15,000pF 4.5V to 18V Supply Latch-up Protected W ithstands 5V Negative Swing Surface Mount and High Power Package Available - -0 ° - MIC4451

bt33

Abstract: R7970
Contextual Info: 7 D R A W IN G M A D E IN T H I R D A N G LE LO C T H I S - B -RA-W 4-N G - I S - U N P U B L I S H E D C C o p y rig h t RESERVED. 1 9 8 2 ,3 3 A M P PRODUCTS D IS T 39 P R O J E C T IO N MAY R E LE A S E D by A M P BE COVERED FOR In c o rp o ra te d ,

lineage rectifier tyco NP2500

Abstract: np2500* shelf application note NP2500 rectifier tyco NP2500 circuit diagram TYCO 596A RECTIFIER FAJ ESD tyco np1200 rectifier tyco NP2500 Galaxy protocol TYCO np1500 RECTIFIER
Contextual Info: Galaxy Rack-Mounted Vector Controller J85501M-1 Product Manual Select Code 167-792-117 Comcode 108993564 Issue 2 January 2008 Product Manual Select Code 167-792-117 Comcode 108993564 Issue 2 January 2008 Rack-Mounted Vector Controller J85501M-1 Notice: The information, specifications, and procedures in this manual are

2SC373

Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
Contextual Info: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s

Contextual Info: M a rc h 1 9 9 8 F A IR C H IL D S E M IC O N D U C T O R tm FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's

TCD126C

Abstract: staggered CCD
Contextual Info: TCD126C The TCD126C is a color contact type CCD linear image sensor. The device is consist of 5 staggered high sensitivity CCD chips. The device contains a row of 14400 photo­ diodes which provide a 400 dot/inch re­ solution across an A3 size paper. By the aid of analog line memories

tp 8370

Contextual Info: REVISION AJ DO NOT SCALE FROM THIS PRINT BTE-XXX-XX-X-D-XX S TY LE -01 "A ” ,1600[4 .064] REF "B " ,1680[4.267] TA B LE 1 BODY BTE-XXX-01-D TE R M IN A L T-1S39-01-X M A TE D H E IG H T W ITH B S E ,1980[5 .029] REF -02 ,2781[7 .064] REF .2861 [7.267] BTE-XXX-02-D

T125 k

Contextual Info: TAIWAN SEMICONDUCTOR E RoHS C O M P L IA N C E HS3A - HS3M 3.0 AMPS. High Efficient Surface Mount Rectifiers SMC/DO-214AB .-•Aifr.-AK I M l/ A . 1 E[ Features <r ❖ ■ i' <' 4- <' <' G la ss p a s s iv a te d j u ncti o n chi p . For su rfa ce m o u n te d a p p lica tio n

sg do-214aB

Abstract: thermel pad
Contextual Info: E TAIWAN SEMICONDUCTOR tò RoHS COMPLIANCE HS3A - HS3M 3.0 AMPS. High Efficient Surface Mount Rectifiers SMC/DO-214AB 1141/ A. 7 E[ Features • i' G la s s p a s s iv a te d j u ncti o n c h i p . <► F o r s u rfa c e m o u n te d a p p lic a tio n L o w fo r w a rd v o lta g e d ro p

Diode FAJ 32

Abstract: diode c604 st c608 A diode IRFPF40 IRFPF42 20V n-Channel Power MOSFET c608 e diode irf 607 diode lg 47a 7A, 100v fast recovery diode
Contextual Info: h e D I M assM sa G ao flfisa □ | Data Sheet No. PD-9.580A IN TER NAT IO NA L R E C T IF IE R f-AJ INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFPF40 IRFPF4S N-CHANNEL 900 Volt, 2.5 Ohm HEXFET TO-247AC TO-3P Plastic Package