FAIRCHILD ROHS Search Results

220v AC voltage stabilizer schematic diagram

Abstract: smps circuit diagram 450w DATASHEET OF IC 741C ATX smps troubleshooting atx power supply 450W schematic PWM 220v ac stabilizer aPPLICATION NOTES ON KA3525A ka3842a application note atx power supply 450W SG6105
Contextual Info: POWER S O L U T I O N S Fairchild’s Power Solutions Fairchild Semiconductor is a global leader in delivering energy-efficient power analog, power discrete, and optoelectronic solutions. These products maximize energy savings in power-sensitive applications such as power

Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V

FGA20N120FTD

Contextual Info: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V

Contextual Info: FGA25N120FTD tm 1200V, 25A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 25A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V

Contextual Info: HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS on = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • • RoHS compliant This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced

Contextual Info: FGA15N120FTD tm 1200V, 15A Field Stop Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.58V @ IC = 15A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V

FSA642

Abstract: DPDT 5V QVSOP48 xFP STM-64 UMLP-10 30v analog switch DPDT QVSOP-48 FSA110 FSA1208 FSA203
Contextual Info: Fairchild’s Switch Selection Guide FSC Part Number FSA110 FSA201 FSA203* FSA221* FSA223* FSA642 Application Specific FSSD06 FSA1208 FSA1211 Multimedia Switches with Negative Swing Capability Low RON Analog/Audio Switches Negative Swing Audio Switches

FQD12P10TM_F085

Abstract: FQD12P10TM
Contextual Info: FQD12P10TM_F085 tm 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

EZ1016A

Contextual Info: FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET Features Description ̇ Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry ̇ Accurate Constant Current Achieved by Fairchild’s Proprietary TRUECURRENT Technique

400v p-channel mosfet

Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB33N10L / FQI33N10L October 2008 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD19N10L / FQU19N10L January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FQB34N20L / FQI34N20L October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FSL136MR

Abstract: FSL136 FOD817A JESD22-A114
Contextual Info: FSL136MR Green Mode Fairchild Power Switch FPS Features Description ƒ ƒ The FSL136MR integrated Pulse Width Modulator (PWM) and SenseFET is specifically designed for highperformance offline Switch-Mode Power Supplies (SMPS) with minimal external components. FSL136MR

Contextual Info: FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD12P10TM_F085 tm 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FGPF4633 330V PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGH15T120

Contextual Info: FGH15T120SMD 1200 V, 15 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum

Contextual Info: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: QFET FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to