FAIRCHILD PT 100 Search Results

fga30n60lsd

Abstract: FGA30N60 PT 1000 TC Direct
Contextual Info: FGA30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild 's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as

design ups inverter

Abstract: 247A03
Contextual Info: FGH30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild 's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as

Contextual Info: SGP23N60UF 600V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature. •

Contextual Info: SGF23N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters where High Speed Switching is required feature. • • •

PT 1000 TC Direct

Abstract: IGBT 200-4
Contextual Info: FGAF40N60UF 600 V PT IGBT General Description Fairchild 's UF series of IGBTs provide low conduction and switching losses. The UF series is designed for applications such as general inverters and PFC where high speed switching is a required feature. Features

Contextual Info: SGP23N60UF 600V PT IGBT General Description Features Fairchild ’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature. •

PT 1000 tc direct

Contextual Info: SGF23N60UF 600 V PT IGBT General Description Features Fairchild ’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters where High Speed Switching is required feature. • •

Contextual Info: SGH40N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. • High Speed Switching

Contextual Info: SGH40N60UF 600 V PT IGBT General Description Features Fairchild ’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where High Speed Switching is required feature. • High Speed Switching

IGBT cross reference

Abstract: AN9007 diode rectifier ebr IGBT SCHEMATIC IGBT tail time AN-9007 PP339 IGBT 2000 failure analysis IGBT IGBT failure
Contextual Info: July, 2000 AN9007 High Performance 1200V PT IGBT with Improved Short-Circuit Immunity Chongman Yun, Sooseong Kim, Youngdae Kwon and Taehoon Kim Fairchild Semiconductor 82-3 Dodang-Dong, Wonmi-Ku, Buchon, Kyunggi-Do, KOREA Phone +82-32-680- 1325, Fax)+82-32-680- 1823, E-mail)cmyun@Fairchildsemi.co.kr

BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Contextual Info: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW

Contextual Info: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs December 2001 Features Description • 6A, 100V, rDS ON = 0.180Ω Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and PChannel enhancement types with ratings from 100V to

Contextual Info: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 14A, 100V, RDS on = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Rad Hard in Fairchild for MOSFET

Contextual Info: FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 25A, 100V, RDS on = 0.07Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 6A, -100V, RDS on = 0.550Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

smps power circuit using ka3842

Abstract: bobbin EER-3542 220V ferrite core transformer sec ka7912 EER3542D ic ka3842b ka3842 application circuits 2 mosfet forward converter cookbook 220v 300w ac regulator circuit KA3842B Schematic
Contextual Info: Application Note 9015 July, 2000 A180W, 100KHz Forward Converter Using QFET by I.S. Yang Introduction The inherent performance advantage of power MOSFETs makes their use very attractive in switched mode power supplies. The fundamental advantage of the power MOSFET is the

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRS140D, FRS140R, FRS140H 17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 17A, 100V, RDS on = 0.145Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FGA30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as

Rad Hard in Fairchild for MOSFET

Contextual Info: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot