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    FAIRCHILD P CHANNEL MOSFET Search Results

    FAIRCHILD P CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    TK5R1A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK090U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Datasheet
    TK5R3E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Datasheet

    FAIRCHILD P CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CBVK741B019

    Abstract: F63TNR FDS6975 L86Z
    Contextual Info: February 1999 FAIRCHILD SEMICONDUCTOR T M FDS69 75 Dual P-Channel, Logic Level, PowerTrench MOSFET Features General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDS69 CBVK741B019 F63TNR FDS6975 L86Z PDF

    Contextual Info: FAIRCHILD SEM IC ONDUCTO R February 1999 tm FDS4953 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDS4953 PDF

    Contextual Info: FAIRCHILD S E M IC O N D U C T O R November 1998 tm FDS6875 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to


    OCR Scan     		FDS6875 PDF

    tic 2260

    Abstract: FDS4435 CBVK741B019 F63TNR L86Z
    Contextual Info: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize


    OCR Scan     		FDS4435 tic 2260 FDS4435 CBVK741B019 F63TNR L86Z PDF

    Contextual Info: February 1999 FAIRCHILD S E M IC O N D U C T O R tm FDS69 75 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDS69 PDF

    SSOT-6

    Abstract: FDC658P CBVK741B019 D872 F63TNR FDC633N y734
    Contextual Info: FAIRCHILD February 1999 S E M IC O N D U C T O R TM FDC65 8P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDC65 SOl-21 extremely180 SSOT-6 FDC658P CBVK741B019 D872 F63TNR FDC633N y734 PDF

    FDN340P

    Contextual Info: FAIRCHILD November 1998 M IC D N D U C T D R - FDN340P Single P-Channel 2.5V Specified PowerTrench MOSFET F eatures G eneral Description This P-Channel 2.5V specified M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		FDN340P R0-0030 RO-0030 FDN340P PDF

    fds4435 mosfet

    Abstract: Power MOSFET, Fairchild FDS4435 ds4435 2197f
    Contextual Info: FDS4435 FAIRCHILD October 1998 S E M I C O N D U C T O R TM FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		FDS4435 FDS4435 DS4435 fds4435 mosfet Power MOSFET, Fairchild 2197f PDF

    FDN336P

    Abstract: SOIC-16
    Contextual Info: N ovem ber 1998 FAIRCHILD S E M IC O N D U C T O R TM FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		FDN336P FDN336P SOIC-16 PDF

    Contextual Info: February 1999 FAIRCHILD M IC D N D U C T Q R ! FDC65 8P Single P-Channel, Logic Level, PowerTrench General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDC65 PDF

    Contextual Info: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T his P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize


    OCR Scan     		FDS6675 PDF

    RTJC

    Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H FDD8424H RTJC PDF

    Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H PDF

    Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B com/dwg/M0/M08A PDF

    FDS8958B

    Abstract: CQ238
    Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B CQ238 PDF

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V PDF

    FDD3510H

    Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B PDF

    FDS8858

    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858 PDF

    FDS8858CZ

    Abstract: fds8858
    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 PDF

    FDS8858CZ

    Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
    Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180 PDF

    Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    FDS6575

    Abstract: F63TNR F852 SOIC-16
    Contextual Info: November 1998 FDS6575 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		FDS6575 OT-23 FDS6575 F63TNR F852 SOIC-16 PDF

    Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		FDS6675 OT-23 PDF