FAIR-RITE ATC Search Results

Contextual Info: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.

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Abstract: AN749 MRF154 trifilar mc1723 ic 2225C MC1723 application notes 36803 T1/FERRITE TRANSFORMER Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ARCHIVE INFORMATION

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Abstract: mc1723 ic nippon ferrite AN749 application of mc1723 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS MRF154 rf mosfet power amplifier 1N4148 1N5362
Contextual Info: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.

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Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

MRF282

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

100B201JT500XT

Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

27271SL

Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications

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Abstract: NPN transistor mhz s-parameter mjd310 MRF282
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

MRF282

Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

MRF896

Abstract: 1N4001 Motorola
Contextual Info: MOTOROLA Order this document by MRF896/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF896 Designed for 24 Volt UHF large–signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment

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Abstract: MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

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Abstract: Arco Variable Capacitors MRF282
Contextual Info: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

MRF282

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

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Abstract: MRF282 C10B4 marking amplifier j02 56-590-65-3B Ferrite Beads MJD320 Variable Capacitors Arco rm73b2b120jt MALLORY tantalum CAPACITORS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

Arlon

Abstract: MRF282
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

TL12

Abstract: 2052-1618 mrf650
Contextual Info: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

MOTOROLA ELECTROLYTIC CAPACITOR

Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM

Contextual Info: , Una. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

Abstract: 2.4 ghz transmitter rf test
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR

MRF897

Contextual Info: ZPioaucti, Una. 'Istieu TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF897 RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class-AB linear

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Abstract: k 246 transistor 1.4901 bd135 equivalent
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM

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Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with