FAILURE TEST REPORT Search Results

2005 Z

Abstract: R 753 tcr-125 TCR55 S10K 22-315
Contextual Info: CHINA 752 & 753 SERIES QUALIFICATION DATA FOR THE YEAR 2005 RES TEST BL# LET VALUE MIN MAX AVG RES QTY PARTS TOTAL PER PART TESTED FAILURE RESISTORS REPORT QTR PARTS RES FAILED FAILED PART SERIES YEAR NUMBER IN RES 19747 D 100/1K - - - 12 80 - 1 752

SMD 43A

Abstract: IRHNB7260 IRHNB8260
Contextual Info: PD - 91798 IRHNB7260 IRHNB8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

IRH7054

Abstract: IRH8054
Contextual Info: PD - 90883A IRH7054 IRH8054 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.025Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

V15000

Abstract: IRHNB7Z60 IRHNB8Z60
Contextual Info: PD - 91754 IRHNB7Z60 IRHNB8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 30Volt, 0.009Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

IRHM7260

Abstract: IRHM8260
Contextual Info: PD - 91332C IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

diode smd ed 49

Abstract: 2N739 2N7394 n mosfet 60volt 30a IRHN7054 IRHN8054 JANSH2N7394U JANSR2N7394U 2N7394U
Contextual Info: PD - 90884A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHN7054 IRHN8054 JANSR2N7394U JANSH2N7394U [REF:MIL-PRF-19500/603] N-CHANNEL Ω , MEGA RAD HARD HEXFET 60Volt, 0.027Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

sensors mttf

Abstract: SAC405 UM 3841 4953 sac 405 "Hall Effect Sensor" mttf resistor activation energy sURVEY OF Hall Effect Current Measurements WLCSP Cu6Sn5
Contextual Info: Mean Time To Failure in Wafer Level-CSP Packages with SnPb and SnAgCu Solder Bumps Stephen Gee and Luu Nguyen National Semiconductor M/S 19-100 3875 Kifer Rd. Santa Clara, CA 95051 stephen.gee@nsc.com luu.nguyen@nsc.com ABSTRACT In this test setup, embedded die surface temperature sensors are

IRHM7460SE

Contextual Info: PD - 91394D IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

IRHM7360SE

Contextual Info: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

IRHNB8160

Abstract: IRHNB7160
Contextual Info: PD - 91795 IRHNB7160 IRHNB8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, RAD HARD HEXFET 100Volt, 0.040Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs

IRHM7054

Abstract: IRHM8054 JANSH2N7394 JANSR2N7394
Contextual Info: PD - 90887C REPETITIVE AVALANCHE AND dv/dt RATED IRHM7054 IRHM8054 JANSR2N7394 JANSH2N7394 [REF: MIL-PRF-19500/603] N-CHANNEL HEXFET TRANSISTOR MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.027Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

shockley diode

Abstract: ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley
Contextual Info: Total Dose Effects on CMOS Active Pixel Sensors J. Bogaerts, B. Dierickx Imec, Kapeldreef 75, 3001 Leuven, Belgium ABSTRACT Co60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors APS that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage

IRHF7310SE

Contextual Info: Provisional Data Sheet No. PD-9.1444 IRHF7310SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 4.5Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD

IRHI7360SE

Abstract: TO-259 TO259
Contextual Info: Provisional Data Sheet No. PD-9.1446A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD

L504XXX

Abstract: transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit
Contextual Info: March 1996 RR-B1A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and July 1,

AN-7518

Contextual Info: Use of Life Tested Parts Application Note May 1999 AN-7518 Author: J. E. Vinson, Ph. D. History eyrds terrpoon, minctor mniions vin, e t, lility, reeni eful , ant rtalfails, arou Product Assumptions This report addresses high reliability product from an Intersil

Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat­ ing failure rates. The monitors include data from endur­

SBF-5089Z

Abstract: SXB-4089Z sba4089z SBW-5089Z sba-4089z ESD test plan Sirenza amplifier SOT-89 SBF-4089Z SXB-2089Z sba-5089z
Contextual Info: Reliability Qualification Report SXB-4089Z Products Qualified by Similarity SBA-4089Z SBA-5089Z SBF-4089Z SBF-5089Z SXB-2089Z SBW-5089Z 303 S. Technology Ct, Broomfield CO, 80021 Phone: 800 SMI-MMIC http://www.sirenza.com Document RQR-103927 Rev. D 1 SXB-4089Z Reliability Qualification Report

SBW5089

Abstract: JESD22-A110 sirenza microdevice sot-89 TRANSISTOR a105 JESD22-A113 JESD22-A114 SBA-4089 SBA-5089 SBF-4089 SBF-5089
Contextual Info: Reliability Qualification Report SBA-5089 Products Qualified by Similarity SBA-4089 SBF-5089 SBF-4089 Initial Qualification 303 S. Technology Ct, Broomfield CO, 80021 SBW-5089 7-2003 Phone: 800 SMI-MMIC http://www.sirenza.com Document RQR-103306- Rev. D

MAX7845

Abstract: MAX232 MAX232 mtbf mar 9109 MAX333 equivalent MAX9690 equivalent scr 9117 maxim 9114 max232 specification MAX252 8 pin
Contextual Info: RR-1G Product Reliability Report This report presents the product reliability data for Maxim’s analog products. This data is a result of extensive reliability stress testing that we performed from 1990 to 1992. It is separated into four groups: Metal Gate

MAX785

Abstract: st 9635 DG302 to220 MAX232CPE MAX232 integrated chips IC 9637 MAX333 equivalent max232 MTBF calculation MAX232 mtbf st 9548
Contextual Info: December 1997 RR-1K Product Reliability Report This report presents the product reliability data for Maxim’s analog products. The data was acquired from extensive reliability stress testing performed in 1996. It is separated into seven fabrication processes: 1 Standard

62137A

Contextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell

AN83001

Abstract: daily production report sheet P2T-18 MSP2TA-18XL n12090 MSP2T-18 MSP2T-18XL 1000Life
Contextual Info: APPLICATION NOTE: AN-83-001 TITLE: Mechanical Switch Extended Life Test Report Reference: RF Mechanical Switch, RF Relay Switch Report Date: August, 21.2009 Report Issued by: Ted Heil Report Reviewed by: Harvey Kaylie Report Status: Initial Release File Name

tsmc design rule

Abstract: tsmc cmos tsmc Activation Energy tsmc L28-TSMC
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 001205 VERSION 1.2 July, 2000 Low Cost Three-PLL Clock Generator CY2081SC/CY2081SL TSMC-2A, Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069 Cypress Semiconductor