FAILURE TEST REPORT Search Results

13001 s

Abstract: 13001 datasheet 13001 JL-01 ACTEL 1020B RTSX32 B 13001 RTSX16 42MX09 1280A
Contextual Info: Actel 4th Quarter 2000 Reliability Report 1 Table of Contents Page Reliability Test Matrix • Test Methods and Conditions Failure Rates • Failure Rates FITs Based For Current Process Data • Mean Time Between Failure (MTBF) For Current Process Data 2

800RPM

Abstract: KD240
Contextual Info: L10 Life Test Report Model No. KD2408PHS3.H Test Condition Input 24 VDC Failures Elec-SPEC 4,800RPM Observe MTTF 0.19AMP Temp 70 ℃ Fan Vertical Useful Life 50 PCS Condition Test Sample Test Hours/Each 15,288 Hours Total Test Hour 740,544 Hours Failure Definition

6K tantalum capacitors

Contextual Info: NIC Doc #R-NTC02 Page 1 of 6 70 Maxess Road ! Melville, New York 11747 631 396-7500 ! Fax (631) 396-7575 NTC SERIES TANTALUM CHIP CAPACITORS ! ! ! ! FAILURE RATE ESTIMATION DE-RATED OPERATION LIST OF RELIABILITY TESTS LIFE TEST SUMMARY FAILURE RATE ESTIMATION

CBR08C

Abstract: CBR08C1
Contextual Info: KEMET Ceramic Surface Mount Capacitors Product RF C0G 0201 33pF 10 V Product Family Qualification CBRO2C330J8GAC 114A010282 SS # Fail Test Performed Test Conditions Sample Size per lot Failure Count Reliability and Environmental Tests High Temperature Life

MTTF

Contextual Info: Life Model No. KD2408PHS3.H Elec-SPEC 4,800RPM Test Sample 50 Pcs Test Hours/Each 2,160 Hours Total Test Hour 108,000 Hours Failure Definition 1.Fan not function 2.RPM Under 15% of original 3.Current Over 15% of original 4.Noise Over 5dB of original Test Condition

IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Contextual Info: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB

JESD22-B104-B

Abstract: JESD22-b103 JESD22-B104 iP1201 transistor Amp 2054 equivalent C1173 JESD22-B103B JESD22-B103-B
Contextual Info: International Rectifier Reliability Report for iPOWIR Family iP1001, iP1201, iP1202, iP2001, iP2002, iP2003 20-Apr-04 iPOWIR Family Reliability Testing Summary 4/20/2004 1 . HTOL - High Temperature Operating Life Test Failure Rate Device Number Conditon Samples

ID32

Abstract: HTGB JA113
Contextual Info: GEN-V SOT-223 HEXFET RELIABILITY REPORT page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms

irlml2404

Abstract: transistor 9529 IRF7603 IRF7389 IRF7103 irlml2402 Small-Outline SMD Reliability Report 704618 HEXFET SO-8 irf7404 datasheet
Contextual Info: Small-Outline SMD Reliability Report Page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms Reliability Data

EIA-625A

Abstract: SSYA010 EIA-541
Contextual Info: Application Report SSYA010 - January 2001 Electrostatic Discharge ESD Tom Diep and Charvaka Durvury Standard Linear & Logic ABSTRACT This application report provides an overview of electrostatic-discharge (ESD) test models, failure modes, protection strategies, and Texas Instruments (TI) procedures to guard against

transistor 9752

Abstract: RECTIFIER 8212 ID09 HTGB
Contextual Info: GEN-III SOT-223 HEXFET RELIABILITY REPORT page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. XI. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms

2005 Z

Abstract: R 753 tcr-125 TCR55 S10K 22-315
Contextual Info: CHINA 752 & 753 SERIES QUALIFICATION DATA FOR THE YEAR 2005 RES TEST BL# LET VALUE MIN MAX AVG RES QTY PARTS TOTAL PER PART TESTED FAILURE RESISTORS REPORT QTR PARTS RES FAILED FAILED PART SERIES YEAR NUMBER IN RES 19747 D 100/1K - - - 12 80 - 1 752

DD-03201FP-200

Abstract: CH85 capacitor ARINC429 arinc429 104 DD-03201 DO-160C CH52 CH-1701 TAE 1102
Contextual Info: Make sure the next Card you purchase has. DD-03201 32- OR 96-CHANNEL DISCRETE-TODIGITAL INTERFACE “RXD3” FEATURES • Universal Inputs - Configurable As: • 28 V/Gnd • Open/Gnd • 28 V/Open • Input Resistor Usage • Built-In Self-Test • Soft Failure Reporting

Contextual Info: Make sure the next Card you purchase has. DD-03201 32- OR 96-CHANNEL DISCRETE-TODIGITAL INTERFACE “RXD3” FEATURES • Universal Inputs - Configurable As: • 28 V/Gnd • Open/Gnd • 28 V/Open • Input Resistor Usage • Built-In Self-Test • Soft Failure Reporting

CH85 capacitor

Contextual Info: Make sure the next Card you purchase has. DD-03201 32- OR 96-CHANNEL DISCRETE-TODIGITAL INTERFACE “RXD3” FEATURES • Universal Inputs - Configurable As: • 28 V/Gnd • Open/Gnd • 28 V/Open • Input Resistor Usage • Built-In Self-Test • Soft Failure Reporting

DD-03201FP-200

Abstract: 8065 microprocessor
Contextual Info: Make sure the next Card you purchase has. DD-03201 32- or 96-Channel discrete-ToDigital Interface “RXD3” FEATURES • Universal Inputs - Configurable As: • 28 V/Gnd • Open/Gnd • 28 V/Open • Input Resistor Usage • Built-In Self-Test • Soft Failure Reporting

CH89 diode

Abstract: 74CH74 DIODE CH71 DD-03182PP 96-channel diode gp 429
Contextual Info: Make sure the next Card you purchase has. DD-03296 96-CHANNEL DISCRETE-TO-DIGITAL INTERFACE FEATURES • HIRF Layer • Universal Inputs • 28V/Gnd • Open/Gnd • 28V/Open • Built-in Self-Test • Soft Failure Reporting • Higher MTBUR • ARINC 429 Output Port

Contextual Info: Make sure the next Card you purchase has. DD-03296 96-CHANNEL DISCRETE-TO-DIGITAL INTERFACE FEATURES • HIRF Layer • Universal Inputs • 28V/Gnd • Open/Gnd • 28V/Open • Built-in Self-Test • Soft Failure Reporting • Higher MTBUR • ARINC 429 Output Port

Contextual Info: PD - 91396B IRHNA7160 IRHNA8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, RAD HARD HEXFET 100Volt, 0.040Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

IRHNA7Z60

Abstract: IRHNA8Z60
Contextual Info: PD - 91701B IRHNA7Z60 IRHNA8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD W , RAD HARD HEXFET 30 Volt, 0.009W International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

IRHNA7160

Abstract: IRHNA8160 JANSH2N7432U JANSR2N7432U
Contextual Info: REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHNA7160 IRHNA8160 JANSR2N7432U JANSH2N7432U N-CHANNEL MEGA RAD HARD Ω , RAD HARD HEXFET 100Volt, 0.040Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

SMD 43A

Abstract: IRHNB7260 IRHNB8260
Contextual Info: PD - 91798 IRHNB7260 IRHNB8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

smd 43a

Contextual Info: PD - 91798 IRHNB7260 IRHNB8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

Contextual Info: PD - 91397A IRHNA7260 IRHNA8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test