FAILURE REPORT IGBT Search Results

OF IGBT

Abstract: IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 reliability report and tests for failure rate how can test igbt siemens igbt BSM 75 gb 100 Siemens BSM 50 GB 100 DN1
Contextual Info: Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and Reliability requirements 2. Investigations regarding Temperature Cycling and Power Cycling 3. Results of Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate

IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Contextual Info: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

Contextual Info: AOS Semiconductor Reliability Report AOK15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

HTGB

Contextual Info: AOS Semiconductor Reliability Report AOK10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

Contextual Info: AOS Semiconductor Reliability Report AOD5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

Contextual Info: AOS Semiconductor Reliability Report AOT10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

Contextual Info: AOS Semiconductor Reliability Report AOT5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

Contextual Info: AOS Semiconductor Reliability Report AOT15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

BUV48A

Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification

Contextual Info: ● ● ● ● ● ● ● Features Unregulated Converters Description ECONOLINE Pot-Core Transformer - separated windings High 5.2kVDC Isolation in compact size Optional Continuous Short Circuit Protected Pin Compatible with RH and RK Series Approved for Medical and IGBT Applications

Contextual Info: ● ● ● ● ● ● Features Unregulated Converters Description UL/CSA and EN Safety certified EN-60601 for Medical Applications Isolation 6.4kVDC Optional Continuous Short Circuit Protected /X2 Option for >9mm Input/Output Clearance Suitable for IGBT Applications

RK_RH

Contextual Info: ● Features ● ● Unregulated Converter ● ● ● ECONOLINE 3kVDC or 4kVDC Isolation Optional Continuous Short Circuit Protected Custom Solutions Available UL94V-0 Package Material Efficiency to 84 % Suitable for IGBT Applications DC/DC-Converter with 3 year Warranty

Contextual Info: GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm z 3rd Generation A z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) z Enhancement−Mode z 4.5 V Gate Drive

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

gt50j102

Abstract: failure report IGBT
Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30µs Max. z Low saturation voltage.

Contextual Info: GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit: mm STROBE FLASH APPLICATIONS z 4th Generation Trench Gate Structure z Enhancement−Mode z Low Saturation Voltage : VCE (sat) = 7 V (Max.) (@IC = 150 A) z 4 V Gate Drive

GT30*122

Abstract: GT30J122 IGBT GT30J122
Contextual Info: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25µs Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)

GT25G101

Contextual Info: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

GT30J322

Abstract: MARKING toshiba
Contextual Info: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed z Low saturation voltage

Contextual Info: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit: mm z 3rd Generation A z Enhancement−Mode z Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A) z 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

2-21F2C

Contextual Info: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed z Low saturation voltage

GT25G101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)