FABTECH Search Results

led diod datasheet

Contextual Info: FOR IMMEDIATE RELEASE Diodes, Inc. Announces Successful Completion of FabTech Acquisition C.H. Chen Discusses Expectations for Fourth Quarter and 2001 Westlake Village, California – December 5, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,

BC847BVN

Contextual Info: PRODUCT CHANGE NOTICE Initial DCS/PCN-1148 Rev 00 Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: 24 November, 2009 22 February, 2010 Discrete Semiconductors Additional Wafer Fab Source PCN #: 1148 REV 00 TITLE Qualification of Diodes FabTech as an additional wafer fabrication source

Contextual Info: PRODUCT CHANGE NOTICE Initial DCS/PCN-1136 Rev 00 Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: March 6, 2009 June 4, 2009 Discrete Semiconductors Additional Wafer Fab Source PCN #: 1136 REV 00 TITLE Addition of Diodes FabTech as an alternate wafer fab source for devices listed in the attachment below.

ISO-9000

Contextual Info: FOR IMMEDIATE RELEASE Diodes, Inc. to Acquire Wafer Fab FabTech, Inc. to Support Development of Value-added Product Lines Westlake Village, California – October 30, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,

MMBT4403

Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1127 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: November 13, 2008 February 11, 2009 Discrete Semiconductor Alternate Wafer Fab PCN #: 1127 TITLE Qualification of FabTech as additional wafer fab source for discrete devices

MB16100

Abstract: CX 1213 8TQ100S S5834 cx 3120
Contextual Info: MB16100 SCHOTTKY DIE SPECIFICATION Revision 2 9/24/1999 General Description Low Ir 100V 15A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 50 mA Maximum Instantaneous Forward Voltage @ 15 Amperes, 25 0 @

dyna image

Abstract: cisco 2901 Vishay quality iso certificate 2901 cisco power supply cisco 891 smd 504 diod "dyna image" melf 777 ISO 9001 Sony oracle
Contextual Info: United States SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K [ X ] ANNUAL REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 [FEE REQUIRED] For the fiscal year ended December 31, 2000. Or [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF

MB1045

Abstract: MR2545CT MB104 MBR2535CT MBR3045CT s5633 MR2545
Contextual Info: MB1045 SCHOTTKY DIE SPECIFICATION Revision 4 5/25/2000 General Description Low Ir 45V 10A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.2 mA Maximum Instantaneous Forward Voltage @ 10 Amperes, 25 0 @

SB840

Abstract: SR2040 SRA1020 SRA820 SRA840 SBG2030-2045CT 2045ct
Contextual Info: SB840 SCHOTTKY DIE SPECIFICATION Revision 4 1/20/2001 General Description Std Vf 40V 8A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.3 mA Maximum Instantaneous Forward Voltage @ 5 Amperes, 25 0 @ @ 8 Amperes, 25

SBL2050-2060

Abstract: SBL2050-2060PT SBR2060 SBR1560 MB860
Contextual Info: MB860 SCHOTTKY DIE SPECIFICATION Revision 4 5/25/2000 General Description Low Ir 60V 8A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.1 mA Maximum Instantaneous Forward Voltage @ 8 Amperes, 25 0 @ @ 10 Amperes, 25

S5826

Abstract: MB1100 IR 332 MB1100S
Contextual Info: MB1100S SCHOTTKY DIE SPECIFICATION Revision 2 9/24/1999 General Description Low Ir 100V 1A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 50 mA Maximum Instantaneous Forward Voltage @ 1 Amperes, 25 0 SYM

S5314

Abstract: 1203 transistor B130LB MBRS130L
Contextual Info: LB130 SCHOTTKY DIE SPECIFICATION Revision 3 5/22/2000 General Description Low Vf 30V 1A Single Anode SYM Spec. Limit VRRM IFAV 30 1 32 Volt Amp VFMAX 0.395 0.385 Volt VFMAX 0.445 0.435 Volt IRMAX 0.2 0.19 mA Cj MAX 90 pF Nonrepetitive Peak Surge Curren IFSM

1203 transistor

Abstract: 1N5822 data sheet 1N5820 1N5821 1N5822 LB340
Contextual Info: LB340 SCHOTTKY DIE SPECIFICATION Revision 1 5/25/2000 General Description Low Vf 40V 3A Single Anode SYM Spec. Limit VRRM IFAV 40 3 43 Volt Amp VFMAX 0.39 0.38 Volt VFMAX VFMAX 0.465 0.85 0.46 0.84 Volt Volt 40 Volt, Tc = 250 C IRMAX 2 1.6 mA Maximum Junction Capacitance at 0V, 1MHz:

LB330

Abstract: S5304
Contextual Info: LB330 SCHOTTKY DIE SPECIFICATION Revision 3 11/20/1999 General Description Low Vf 30V 3A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 50 mA Maximum Instantaneous Forward Voltage @ 3 Amperes, 25 0 @ 5 Amperes, 25

ISO9002

Abstract: ISO-1401 ISO-14001 ISO-9000 ISO-9002 ISO14001
Contextual Info: FOR IMMEDIATE RELEASE Diodes Manufacturing Receives Environmental Management Certification ISO-14001 Westlake Village, California – November 28, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,

S9102

Abstract: BAS40
Contextual Info: BAS40 SCHOTTKY DIE SPECIFICATION Revision 2 5/5/2000 General Description BAS40 SYM Spec. Limit VRRM IFAV 40 0.2 43 Volt Amp VFMAX 0.38 0.375 Volt VFMAX 1 0.99 Volt IRMAX IRMAX 0.01 0.0002 Cj MAX 4 pF Nonrepetitive Peak Surge Curren IFSM 0.6 Operating Juntion Temperatur

ISO-14001

Abstract: ISO-9000
Contextual Info: FOR IMMEDIATE RELEASE Diodes Incorporated Comments on First-Quarter Outlook Westlake Village, California, March 9, 2001 – Diodes Incorporated Nasdaq: DIOD today said that net income for the first quarter of 2001 will be lower than previously expected due to

FabTech

Abstract: BZT52C3V9LP
Contextual Info: DATE: 15th July, 2010 PCN #: 2017 PCN Title: Qualification of Additional Wafer Sources or Die Shrink. Dear Customer: This is an announcement of change s to products that are currently being

t10812

Abstract: Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - WIREWOUND AND SWITCH PRODUCTS

Supersot 6

Abstract: FDC6392S FDP794P ISO-9000
Contextual Info: Date Created: 2/9/2004 Date Issued: 4/9/2004 PCN # 20040607 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

MB20100

Abstract: 3773 3810 S5835
Contextual Info: MB20100 SCHOTTKY DIE SPECIFICATION Revision 3 11/27/2000 General Description Low Ir 100V 20A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.2 mA Maximum Instantaneous Forward Voltage @ 20 Amperes, 25 0

SB0540

Abstract: MBR0540 S-5412 SB020
Contextual Info: SB0540 SCHOTTKY DIE SPECIFICATION Revision 3 9/3/2000 General Description Std Vf 40V 0.5A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.02 mA Maximum Instantaneous Forward Voltage @ 0.5 Amperes, 25 0

1660CT

Abstract: b550 transistor MB560 B550 transistor datasheet MB1550 1060ct 1803 5a 1560CT
Contextual Info: MB560 SCHOTTKY DIE SPECIFICATION Revision 5 8/25/2000 General Description Low Ir 60V 5A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.1 mA Maximum Instantaneous Forward Voltage @ 5 Amperes, 25 0 @ @ 8 Amperes, 25

mb1060

Abstract: SR2050 SR2060 SRA1050 SRA1060
Contextual Info: MB1060 SCHOTTKY DIE SPECIFICATION Revision 4 5/25/2000 General Description Low Ir 60V 10A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.2 mA Maximum Instantaneous Forward Voltage @ 10 Amperes, 25 0 @