F710 Search Results

F7103

Contextual Info: I n t e r n a t io n a l p° 9 ' “ “ jeor R ectifier preliminary IR F7103 HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating

f7101

Abstract: MOSFET IRF7101 f-7101 MS-012AA
Contextual Info: SO-8 MS-012AA EXAMPLE: THIS IS AN F7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER

MGF7104

Abstract: MGF7103
Contextual Info: ^MITSUBISHI F7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION APPLICATION M G F7100 Series are m onolithic m icrow ave integrated circuits for use in 900M H z band # RF output stage of H andheld phone am plifiers. Note: This is not a final specification.

MOSFET IRF 713

Contextual Info: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)

Contextual Info: — 320M AX . — 610MAX. BLUE BEAD wiSsà Mb s •0 -0 .150 ■Q 0 "1 $)■ .610 MAX. JL 1 .187 *.020 1 I .450 .300 .150 H .0 2 0 ! 88? DIA. .450 - U PINS REV. 0 .300 DCO 141447 COIL: @ 25°C NOMINAI CUSTOMER DATA SHEET 720 OHMS t10% RFSIST A N fF 26.5 VDC

SBI Temperature Sensor Interface SB-TSI

Abstract: APIC21 Northbridge MSRC001 htc one s mobile MOTHERBOARD CIRCUIT diagram ea517 E1000 intel gigabit driver hdmi dvi verilog deep color 6880H SBI Temperature Sensor Interface SB-TSI Specification,
Contextual Info: 43170 Rev 3.13 - February 17, 2012 BKDG for AMD Family 14h Models 00h-0Fh Processors Cover page BIOS and Kernel Developer’s Guide BKDG for AMD Family 14h Models 00h-0Fh Processors Advanced Micro Devices 1 43170 Rev 3.13 - February 17, 2012 BKDG for AMD Family 14h Models 00h-0Fh Processors

ic 94101

Abstract: innovative dro IRF7342D2
Contextual Info: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V

F7101

Abstract: IRF7101 IRF7311 MS-012AA
Contextual Info: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier

IRF7389

Abstract: irf7389 application
Contextual Info: PD - 91645 IRF7389 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 30V -30V

IRF7476

Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
Contextual Info: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance

IRF8113

Abstract: F7101 IRF7101
Contextual Info: PD - 94637 IRF8113 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

IRF 4310

Abstract: F7101 IRF7101 IRF7832
Contextual Info: PD - 94594A IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 4.0m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS

IRF7317

Abstract: MS-012AA
Contextual Info: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V

F710

Abstract: IRF7401 MS-012AA
Contextual Info: PD - 9.1244C IRF7401 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS on = 0.022Ω

LG 631 IC

Abstract: SDXC pin diagram of tle 7203 F804 F808 HSP50216 HSP50216KI tle 8209 e SD2C tle 8209
Contextual Info: HSP50216 TM Data Sheet tle P5 6 jec rnn ra abl ital n ver tho w rsi por n, ico cto Four-Channel Programmable Digital DownConverter The HSP50216 Quad Programmable Digital DownConverter QPDC) is designed for high dynamic range applications such as cellular basestations where multiple channel processing is

Siemens b41306

Abstract: Siemens B43306
Contextual Info: Capacitors with Solder Pins GP Grade B 41 306 B 43 306 Standard version with high ripple current capability Rated voltage up to 500 Vdc Construction • • • • Charge-discharge proof, polar Aluminum case, fully insulated Overload protection by preset break point in case

BQ2053

Contextual Info: BENCHMARQ Advance Information bq2053 Lithium ton Pack Supervisor Features General Description >- Protects two to four Lithium Ion series cells from overvoltage, undervoltage, and short circuit The bq2053 Lithium Ion Pack Supervisor is designed to control the

Contextual Info: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Contextual Info: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package

Contextual Info: IRF7416PbF-1 HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.020 Ω 61 nC -10 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: PD – 91746D IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

IRF7907PBF

Contextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications

B39881B7923P810

Abstract: 14 pin LA 4470 b7923
Contextual Info: SAW Components SAW Duplexer Cellular / WCDMA Band V Series/type: Ordering code: B7923 B39881B7923P810 Date: Version: January 26, 2011 2.0  EPCOS AG 2011. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

IRF7478PBF

Abstract: 48V SMPS irf 1740 AN1001 EIA-541 F7101 IRF7101 smps 48v 12v
Contextual Info: PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See