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    F68C Search Results

    F68C Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge P4SMAF6.8CA
    SUNMATE electronic Co., LTD 400W surface mount transient voltage suppressor diode in SMAF package, with 6.8V to 440V breakdown voltage range, glass passivated die, fast response, and plastic UL 94V-0 rated flammability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current.400W surface mount transient voltage suppressor diode in SMAF package, glass passivated, with 6.8 to 440V working voltage range, fast response, and high surge current capability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.P4SMAF6.8A(CA) to P4SMAF440A(CA) is a surface mount transient voltage suppressor diode with 400 W peak pulse power, 6.8 to 440 V breakdown voltage, glass passivated die, and operating temperature from -55 to +150 C.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability. Original PDF
    badge P6SMBF68CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions.Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die construction. Original PDF
    badge SMBF68CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low clamping voltage.Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, with fast response and low clamping voltage.Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die construction.Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, with fast response and excellent clamping capability.Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, with fast response and low clamping voltage.Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, with fast response and excellent clamping capability.Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, with fast response and excellent clamping capability. Original PDF
    badge SMBF6.8CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor in SMBF package, 600W peak pulse power, 6.8V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low clamping voltage. Original PDF
    badge P4SMAF68CA
    SUNMATE electronic Co., LTD 400W surface mount transient voltage suppressor diode in SMAF package, with 6.8V to 440V breakdown voltage range, glass passivated die, fast response, and plastic UL 94V-0 rated flammability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current.400W surface mount transient voltage suppressor diode in SMAF package, glass passivated, with 6.8 to 440V working voltage range, fast response, and high surge current capability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.P4SMAF6.8A(CA) to P4SMAF440A(CA) is a surface mount transient voltage suppressor diode with 400 W peak pulse power, 6.8 to 440 V breakdown voltage, glass passivated die, and operating temperature from -55 to +150 C.Surface mount transient voltage suppressor diode in SMAF package, 400W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability. Original PDF
    badge P6SMBF6.8CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 6.8V to 440V breakdown voltage range, glass passivated die, and fast response for surge protection. Original PDF
    SF Impression Pixel

    F68C Price and Stock

    Advanced Thermal Solutions Inc

    Advanced Thermal Solutions Inc ATS-18F-68-C2-R0

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    Advanced Thermal Solutions Inc ATS-03F-68-C2-R0

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    Advanced Thermal Solutions Inc ATS-04F-68-C2-R0

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    Advanced Thermal Solutions Inc ATS-11F-68-C2-R0

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    Advanced Thermal Solutions Inc ATS-12F-68-C2-R0

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    F68C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M68HC12

    Abstract: MC68HC812A4 MC68HC912B32 getchar and putchar F68C F68E
    Contextual Info: Freescale Semiconductor Order this document by AN1280a/D Using The Callable Routines In D-Bug12 By Gordon Doughman, Field Applications Engineer, Software Specialist Freescale Semiconductor, Inc. 1 Introduction All microcontrollers require some type of operating environment for the development and debugging of


    Original
    AN1280a/D D-Bug12 M68HC12 MC68HC812A4 MC68HC912B32 getchar and putchar F68C F68E PDF

    1K x 8 static ram dip22

    Abstract: EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312
    Contextual Info: Preliminary User’s Manual TM V850E/CA2 JUPITER 32-/16-bit Romless Microcontroller Hardware µPD703128, µPD703129 Document No. U15839EE1V0UM00 Date Published August 2003  NEC Corporation 2003 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    Original
    V850E/CA2 32-/16-bit PD703128, PD703129 U15839EE1V0UM00 electricity6130 1K x 8 static ram dip22 EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312 PDF

    Transistor SR 6863 TO-126

    Abstract: SR 6863 h980 sr 6863 D sr 6863 3D
    Contextual Info: User’s Manual 32 SH7457 Group, SH7459 Group User’s Manual: Hardware Renesas 32-Bit RISC Microcomputer SuperHTM RISC engine Family SH74572 SH74593 R5F74572LBG R5F74593LBG All information contained in these materials, including products and product specifications, represents


    Original
    SH7457 SH7459 32-Bit SH74572 SH74593 R5F74572LBG R5F74593LBG R01UH0420EJ0120 Transistor SR 6863 TO-126 SR 6863 h980 sr 6863 D sr 6863 3D PDF

    63D39

    Contextual Info: 12345634789ABC1 1DE48F75EF34E8723457D5E C9 2 CE!3F374"#9$%&' EF34E*12A962#%&'%  F3 !" FB5#$F3B9D7%936B62 )AB2A9C 3 !" 3


    Original
    12345634789ABC1 1DE48F75 3F374 12234567893A758BCD834E3F2 367D3 367D37D) D7D83 D73A758BC 6E34D3 D7936 63D39 PDF

    70F3466

    Abstract: uPD70F3466GC PD70F3466 uPD70F3466 uPD70F3465 F46A uPD70F3470 uPD70F3470GC U16929EE uPD70F3471
    Contextual Info: User’s Manual V850E/RG3 Documentation µPD70F3464 µPD70F3465 µPD70F3466 Document No. U19131EU3V0UM01 Date Published October 2009 NEC Electronics 2008 Printed in Germany µPD70F3470 µPD70F3471 µPD70F3472 2 User’s Manual U19131EU3V0UM01 Notes for CMOS Devices


    Original
    V850E/RG3 PD70F3464 PD70F3465 PD70F3466 U19131EU3V0UM01 PD70F3470 PD70F3471 PD70F3472 70F3466 uPD70F3466GC PD70F3466 uPD70F3466 uPD70F3465 F46A uPD70F3470 uPD70F3470GC U16929EE uPD70F3471 PDF

    AOCB

    Abstract: C8708 CA52G EF68A09C EF68A09CM 28c32 f13000 hl 5161 AH E73A N9L C10P06B
    Contextual Info: ^ ï , C LL 1 1 CO W W W ENTS - _ The 6 F 5 3 0 9 is a r e v o lu tio n a ry n C P E F 8 8 9 l h ig h -p e r fo rm a n c e S-bit m icro p ro c ess o r HMOS w h ic h s u p p o rts m c d e r n p r o g ra m m in g te c h n iq u e s Such as p o sitio n m dep en


    OCR Scan
    EF5809 EF6809 EF68C0 EFG809 MO-C47-AC cs-321 ci-708 CB708 AOCB C8708 CA52G EF68A09C EF68A09CM 28c32 f13000 hl 5161 AH E73A N9L C10P06B PDF

    F46C

    Abstract: F487 F65D F61C b1167 F47B F45E F48B F487 transistor 36B2
    Contextual Info: National Semiconductor Application Note 487 Ashok Krishnamurthy April 1987 INTRODUCTION This report describes the implementation of a radix-2 Decimation-in-time FFT algorithm on the HPC The program as presently set up can do FFTs of length 2 4 8 16 32 64 128 and 256 The program can be easily modified to work


    Original
    PDF

    M68HC12

    Abstract: MC68HC812A4 MC68HC912B32
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1280a/D SEMICONDUCTOR APPLICATION NOTE Using The Callable Routines In D-Bug12 By Gordon Doughman, Field Applications Engineer, Software Specialist Freescale Semiconductor, Inc. 1 Introduction


    Original
    AN1280a/D D-Bug12 M68HC12 MC68HC812A4 MC68HC912B32 PDF

    AN1280a

    Abstract: M68HC12 MC68HC812A4 MC68HC912B32
    Contextual Info: MOTOROLA Order this document by AN1280a/D SEMICONDUCTOR APPLICATION NOTE Using The Callable Routines In D-Bug12 By Gordon Doughman, Field Applications Engineer, Software Specialist 1 Introduction All microcontrollers require some type of operating environment for the development and debugging of


    Original
    AN1280a/D D-Bug12 AN1280a M68HC12 MC68HC812A4 MC68HC912B32 PDF

    D49E

    Abstract: C886 2A E09A 81aa s m b692 B088 k B688 A992 D882 p01 b882 e09a
    Contextual Info: 字符叠加器芯片EA200 济南怡安科技有限公司 ————————————————————————————————————————————— 通用字符叠加器芯片 EA200 技术说明书 一产品特性


    Original
    EA200 D49E C886 2A E09A 81aa s m b692 B088 k B688 A992 D882 p01 b882 e09a PDF