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    F4918D Price and Stock

    mit

    mit MGF4918D29

    SUPER LOW NOISE INGAAS HEMT RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGF4918D29 19,950
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    mit MGF4918D

    Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGF4918D 732
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    F4918D Datasheets Context Search

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    MGF4918D

    Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		mgf4910d491od12ghzmgf4914d+8mgf4916dmgf4917dmgf4918dm5m27c102pmgf4914mgf4910mitsubishi mgfmgf4917 PDF

    MGF4918D

    Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
    Contextual Info: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		mgf4910d12ghzf4914df4916d+9f4917df4918dmgf4914dmgf4918dmgf4916dmgf4917dmgf4914mitsubishi mgfmitsubishi mgf-4918d PDF