F3D DIODE Search Results

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F36%1F&3D132214DDDC 2313FF3613462332364C3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32F5F361F3D132214DDDC 2313FF36134$62332364C3

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FD400R33KF2C Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #3$2 %F32 132214DDDC 32 3F3264C3

LTC4098-3.6

Abstract: WJA66
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #3$2 %F32 132214DDDC 32 3F3264C3

LTC4098-3.6

Abstract: Z654
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FD400R33KF2C-K Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #3$2 %F32 132214DDDC 32 3F3264C3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%62332364C3 &'6 6 *+ &'6(6 )*+

4FF6D

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $32 %F32 &132214DDDC 32 3F3264C3

Z654

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ800R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $32 %F32 &132214DDDC 32 3F3264C3

2sj26

Contextual Info: 2SJ266 2093 2090 L D { L o w D rive S e r ie s V DSs=z 6 0 V P Channel Power M OSFET f 4236 F e a tu re s • Low ON resistance. - Very high-speed switching. - Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ266-applied equipm ent.

CD214B-F350

Abstract: F3300 214B F3400
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ Lead free device RoHS Compliant* Low reverse leakage current Low forward voltage drop High current capability CD214B-F350~F3600 Surface Mount Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

F3150

Abstract: 214B CD214B-F350 F3400 diode marking 33a on semiconductor DO-214AA diode F3B DIODE F3400 rs
Contextual Info: PL IA NT Features *R oH S CO M • ■ ■ ■ RoHS Compliant* Low reverse leakage current Low forward voltage drop High current capability CD214B-F350~F3600 Surface Mount Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

marking diode DO-214AB

Abstract: CD214C-F350 F3400 F3400 rs GENERAL SEMICONDUCTOR DIODE SMC 400 F3D DIODE
Contextual Info: PL IA NT Features RoHS compliant* Glass passivated chip • Low reverse leakage current ■ Low forward voltage drop ■ High current capability *R oH S CO M ■ ■ CD214C-F350~F3600 Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

CD214C-F350

Abstract: F3400 SMC DO-214AB F3400 rs F3D DIODE
Contextual Info: PL IA NT Features Lead free device RoHS compliant* Glass passivated chip • Low reverse leakage current ■ Low forward voltage drop ■ High current capability S CO M ■ *R oH ■ CD214C-F350~F3600 Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

Contextual Info: T PL IA N M CO *R oH S Features • RoHS compliant* ■ Glass passivated chip ■ Low reverse leakage current ■ Low forward voltage drop ■ High current capability CD214C-F350~F3600 Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

s1854

Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Contextual Info: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #

12v regulated power supply

Abstract: MPT1411 MPT1329 X7200 X7200HP FM TRANSMITTER 3KM
Contextual Info: R ADIO MODEM 458MHZ X7200 FEATURES • Type approved for licensed and licence free use. • Conforms to ETSI 300-220, ETSI 300-113, ETSI 300-683, MPT1329, MPT1411. • 17 selectable radio channels. • Range 10Km to 20Km line of sight and 1Km to 3Km in buildings for

Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)

TPCF8104

Abstract: transistor SMD DK
Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)

TPCF8104

Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)

Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)

TPCF8104

Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)

SVI 2004 A

Abstract: SVI 2004 TPC8028 tpc8026 toshiba f5d tpc8117 IC SEM 2004 tpc8118 toshiba smd marking SVI 2004 C
Contextual Info: Medium Power MOSFETs Low Voltage＆ LowResistance series February, 2007 Copyright 2007, Toshiba Corporation. Low Resistance Trend 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI February, 2007 2 Trend Map on Power MOSFET for LiB PCM

Contextual Info: LINEAR TECHNOLOGY CORP I i h b7E D f A • SSlfiMbfl OOOflDDT n ? *LTC LTC1064-3 D TECHNOLOGY |_ow N0jse# High Frequency, 8th Order Linear Phase Lowpass Filter F€ATUR€S DCSCRIPTIOfl ■ ■ ■ ■ ■ ■ ■ ■ The LTC1064-3 is a monolithic 8th order lowpass Bessel fil­

tpc8118

Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Contextual Info: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ