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Royal Electronic Factory (Thailand) Co Ltd MFF04FF2430A50 Resistor: metal film; 243Ω; THT; 250mW; ±1%; MF; 200V; Ø1.9x3.7mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MFF04FF2430A50				5,000	1 - 10 - 100 - 1000 - 10000 $0.01	Get Quote
Royal Electronic Factory (Thailand) Co Ltd MF0W8FF2430A50 Resistor: metal film; 243Ω; THT; 125mW; ±1%; MF; 200V; Ø1.85x3.5mm
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TME	MF0W8FF2430A50				5,000	1 - 10 - 100 - 1000 - 10000 $0.01	Get Quote
Royal Electronic Factory (Thailand) Co Ltd MF006FF2430A50 Resistor: metal film; 243Ω; THT; 600mW; ±1%; MF; 250V; Ø0.6x28mm
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TME	MF006FF2430A50				5,000	1 - 10 - 100 - 1000 - 10000 $0.01	Get Quote
Royal Electronic Factory (Thailand) Co Ltd MF0W4FF2430A50 Resistor: metal film; 243Ω; THT; 250mW; ±1%; MF; 250V; Ø2.5x6.8mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MF0W4FF2430A50				5,000	1 - 10 - 100 - 1000 - 10000 $0.01	Get Quote
Mitsubishi Electric MGF2430A-01 RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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Vyrian	MGF2430A-01		856			1 - 10 - 100 - 1000 - 10000 -	Get Quote

F2430A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGF2430A Abstract: 2430A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ¡ M G F2430A j MICROWAVE POW ER GaAs F ET DESCRIPTION The M G F2430A , po w er G aA s FET w ith an N -channel sch o ttk y gate, is designed fo r use in S to Ku band a m p li fiers. FEATURES • H igh o u tp u t po w er	OCR Scan	f2430a 300ma mgf2430a 2430a	PDF
MGF2430A Abstract: MGF2430 fet J 305 ku Band Power GaAs FET Gf-17 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2430A MICROWAVE POWER GaAs FET DESCRIPTION T he M G F 2 4 3 0 A , power GaAs F E T w ith an N-channel scho ttky gate, is designed fo r use in S to Ku band a m p li fiers. FEATURES • High o u tp u t power • High pow er gain	OCR Scan	mgf2430a 300ma gf-17 -j250 +3mgf2430 fet j 305 ku band power gaas fet	PDF
MGF2430 Abstract: MGF2430A Contextual Info: MITSUBISHI SEMICONDUCTOR <G aA s FET> M G F2430A MICROWAVE POWER GaAs FET DESCRIPTIO N The M G F 2 4 3 0 A , po w e r GaAs F E T w ith O U T LIN E DRAW ING an N-channel U n i t ' m ;H im e te r s s c h o ttk y gate, is designed fo r use in S to K u band a m p li	OCR Scan	f2430a mgf2430 mgf2430a	PDF
MGF2430A Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E	OCR Scan	12ghz mgf4919e mgf4914e mgf49t4d +11mgf4714ap mgf4914d mgf1923 mgf1902b mgf2430a mgf4919 mgf1402b mgf2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> F2430A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 3 0 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li fiers. FEATURES • High o u tp u t power • High pow er gain	OCR Scan	mgf2430a	PDF
2430A Abstract: MGFC2430 MGF2430A MGF2430 Contextual Info: A m it s u b is h i Die_ MGFC2430 Package F2430A ELECTRONIC DEVICE GROUP DESCRIPTION MGFC2430 FEATURES The MGFC2400 series GaAs FETs are N-channel Schottky gate devices designed for high frequency, medium and high power applications. • High output power	OCR Scan	mgfc2400 250mw mgf2400 mgfc2430 +4mgf2430a 2430-t02 2430a mgf2430	PDF