F204 Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12623-5E 8-bit Microcontroller CMOS F2MC-8FX MB95200H/210H Series F204H/F204K/F203H/F203K/F202H/F202K MB95F214H/F214K/F213H/F213K/F212H/F212K • DESCRIPTION MB95200H/210H is a series of general-purpose, single-chip microcontrollers. In addition to a compact instruction

Contextual Info: polyfet rf devices F2047 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended

RF POWER VERTICAL MOSFET 1000 w

Abstract: AK 3913
Contextual Info: POLYFET R F DEVICES M7E t • 7211G01 ODGÜ1D1 1 ■ PLYF T - 39-12 POLYFET RF DEVICES F2043 PATENTED GOLD METALLIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse

Contextual Info: polyfet rf devices F2049 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F2048 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2048

Contextual Info: polyfet rf devices F2048 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2047

Contextual Info: polyfet rf devices F2047 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2049

Contextual Info: polyfet rf devices F2049 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F2048 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"*"1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F2041 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F2049 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended

E41871

Abstract: A3X2G7 ultramid a3x2g7 pa66 fr QMFZ2 D495 QMFZ2 basf
Contextual Info: Component-Plastics Recognition QMFZ2 Component - Plastics Saturday, February 07, 1998 E41871 BASF AKTIENGESELLSCHAFT DEP KTE/SB F204 67056 LUDWIGSHAFEN GERMANY Material Designation: A3X2G7 Product Description: Polyamide 66 PA66 , glass reinforced, designated "Ultramid" furnished as pellets.

MB95F202H

Abstract: 1262-33 MB95F204K mb95f204hpf MB95F203K MB95F203 MB95F204
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-12623-3E 8-bit Microcontroller CMOS F2MC-8FX MB95200H/210H Series F204H/F204K/F203H/F203K/F202H/F202K MB95F214H/F214K/F213H/F213K/F212H/F212K • DESCRIPTION MB95200H/210H is a series of general-purpose, single-chip microcontrollers. In addition to a compact instruction

Contextual Info: polyfet rf devices F2047 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

SM-150 diode

Contextual Info: Order this data sheet by F2045CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M BR F2045C T SWITCHMODE Schottky Pow er R ectifiers Motorola Preferred Device The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial

F2046

Contextual Info: polyfet rf devices F2046 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

T-39W F2044

Abstract: RF POWER VERTICAL MOSFET 1000 w
Contextual Info: POLYFET R F DEVICES 4?E D MÊ 7 5 4 1 0 0 1 0 0 0 0 1 0 5 t. • PLYF T - 3 9 -/ / POLYFET RF DEVICES F2044 PATENTED GOLD METALLIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse

MB95F204K

Abstract: mb95f204hpf MB95F202H MB95F203K
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-12623-4E 8-bit Microcontroller CMOS F2MC-8FX MB95200H/210H Series F204H/F204K/F203H/F203K/F202H/F202K MB95F214H/F214K/F213H/F213K/F212H/F212K • DESCRIPTION MB95200H/210H is a series of general-purpose, single-chip microcontrollers. In addition to a compact instruction

Contextual Info: Ratioplast - Electronics Homepage: www.ratioplast.de / E-Mail: info@ratioplast.de Tel.:+49 0 5741 / 23661-0 / Fax: +49 (0) 5741 / 23661-20 3.0mm MALE TERMINAL / FEMALE HOUSING Part No.:3000-MT-L PART NO. 3000H-F201B-L 3000H-F202B-L 3000H-F203B-L 3000H-F204B-L

MB95F203

Abstract: Microcontrollers mb95f203k MB95F204K MB95F202H MB95F212 MB95F212K F212K MB95F203H F204h
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-12623-1E 8-bit Microcontroller CMOS F2MC-8FX MB95200H/210H Series F204H/F204K/F203H/F203K/F202H/F202K MB95F214H/F214K/F213H/F213K/F212H/F212K • DESCRIPTION MB95200H/210H is a series of general-purpose, single-chip microcontrollers. In addition to a compact instruction

F2041

Contextual Info: polyfet rf devices F2041 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

MB95F202H

Abstract: MB95F204K MB95F203K MB95F202K MB95F212 MB95F212K MB95F204 mb95f204hpf PIN DIAGRAM of IC mb95f202h MB95F202
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12623-5E 8-bit Microcontroller CMOS F2MC-8FX MB95200H/210H Series F204H/F204K/F203H/F203K/F202H/F202K MB95F214H/F214K/F213H/F213K/F212H/F212K • DESCRIPTION MB95200H/210H is a series of general-purpose, single-chip microcontrollers. In addition to a compact instruction

Contextual Info: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended

E41871

Abstract: ultramid A3X2G5 D495 QMFZ2 QMFZ2 basf pa66 fr ultramid a3x2g5
Contextual Info: Component-Plastics Recognition QMFZ2 Component - Plastics Tuesday, May 16, 2000 E41871 BASF AKTIENGESELLSCHAFT DEP KTE/SB F204 67056 LUDWIGSHAFEN GERMANY Material Designation: A3X2G5 Product Description: Polyamide 66 PA66 , glass reinforced, designated "Ultramid" furnished as pellets.