F1520 Search Results

Contextual Info: SANGDEST MICROELECTRONICS SDURB/D/F1520 Green Products Technical Data Data Sheet N1255, Rev. - SDURB/D/F1520 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: no; C -D O m 2 1 e> Q> contact T-DBIT20-Ì00102 BAOK INSULATOR i-D c m -B v m FRONT INSULATOR l-D C m -FA2K00 S-DBW10-B15102 a> BACfC SHELL S-DBW20-F15202 Q> FRONT SHELL S-DBW2D—F15I0Z 9 1 5 1 1 1 1 1 GOLD FLASH TIN PLATED NICKEL PLATED TIN PLATED 2 3 4

Contextual Info: polyfet rf devices F1520 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended lifetime. Low output capacitance

F1520

Contextual Info: polyfet rf devices F1520 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

K2I transistor

Abstract: TRANSISTOR K 135
Contextual Info: SIEMENS BF775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners LOs Q62702-F1520 1=B m BF 775W ro II ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 3=C Package

sot marking code ZS

Abstract: Q62702-F1520
Contextual Info: BF 775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 775W SOT-323 LOs Q62702-F1520 1=B 2=E 3=C

Contextual Info: S IE M E N S BF 775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package CO O 1! Pin Configuration Q62702-F1520 LU Marking Ordering Code LOs II

Contextual Info: polyfet rf devices F1520 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Thyristor ys 150 105

Abstract: M5 DIODE Thyristor ys 150
Contextual Info: 5 ; » • 9f T ‘ ?k SCR Inverters International I%2R Rectifier Thyristor/Diode, Fast Doubler Circuii Positive Control INT-A-Pak 1RKH FI02-12 1200 105 105 90 2400 :5oo 20 and 25 0.085 2 14 I 7 87097 IRKH F102-06 600 105 105 90 2400 2500 20 and 25 0 085

Contextual Info: ~r7 l11WHITE MICROELECTRONICS 512Kx8 MONOLITHIC FLASH PRELIMINARY' FEATURES • ■ Access Times of 70,90.120 and 150nS ■ ■ ■ WPF512K8-XXX5| Packaging Sector Erase Architecture • 8 equal size sectors of 64K bytes each • Any combination of sectors can be concurrently erased.

mepco capacitor

Abstract: MEPCO electra
Contextual Info: PRELIMINARY HS9151 Micro-Switching Off-Line Power Converter 120 Vac / + 5V @ 3 Amps General Description Features The HS9151—Micro-Switching Off-Line Power Converter is a hybrid power converter housed in a 3.5" x 1.5" x 0.44" metal dual-in-line package. •