F RU 250 Search Results

ln3644

Abstract: 1N3643 1N3644 1N3645 1N3647 1N4254 1N4257 N3644
Contextual Info: . v.X ik L jS / \ « 8 iM V MwrolsemiCorp. 1 N 3 643 th ru 1 N 3 647 1N4254 thru 1N4257 1 m si 81 th ru 1 n s i 8 4 ' The dio d e experts SANTA ANA, CA F o r m o r e in f o r m a ti o n call: 714 9 7 9 -8 2 2 0 FEATU RES • M IC R O M IN IA TU R E PAC KAGE

Contextual Info: 650/55 al High Performance Operational Amplifier F e b ru a ry 1 9 9 0 F e a tu re s Slew R a te . * e s c rip tio n .'T 5 v / js • B an dw id

Contextual Info: Ordering number : ENN5917 M o n o lith ic D igital 1C LB1981V Three-Phase Brushless Motor Driver Overview Package Dimensions T h e L B 19 8 1 V is a th re e -p h a s e b ru s h le s s m o to r d riv e r u n it: m m e s p e c ia lly s u ite d f o r u s e m a in ly w ith d ru m m o to rs o f

3055 rle

Abstract: VEB M ik ro e le k tro n ik U1600 Scans-048 BV EI 3055 M9152 DSAGER00027 0402092 st7255
Contextual Info: pz l f i N e tz tra n sfo rm a to re n N e tz tra n s fo rm a to re n w e rd e n in den ve rsch ie d e n ste n A u s fü h ru n g e n g e fe rtig t, so daß w i r a u f G ru n d des u m fa n g re ic h e n P ro d u k tio n s p ro g ra m m e s in d e r Lage sin d , h oh en

S29JL032

Abstract: S29JL032H S29PL032J spansion marking date code
Contextual Info: Am29DL320G Data Sheet RU QHZ GHVLJQV LQYROYLQJ 7623 SDFNDJHV 6-/+ VXSHUFHGHV $P'/* DQG LV WKH IDFWRU\UHFRPPHQGHG PLJUDWLRQ SDWK 3OHDVH UHIHU WR WKH 6-/+ 'DWDVKHHW IRU VSHFLILFDWLRQV DQG RUGHULQJ LQIRUPDWLRQ )RU QHZ GHVLJQV LQYROYLQJ )LQHSLWFK %*$ )%*$ SDFNDJHV 63/- VXSHUFHGHV $P'/* DQG LV WKH

Contextual Info: 8 SCHEMATIC 1,094 [ 2 7 ,8 ] SPECIFICATIONS FUNCTION: 1P2T ON— ON RATINGS: 20A 125VAC (cU Lus) 10.1 A 250VAC (cU Lus) o 16 (4 )A 25 0 V ~ T125 (ENEC) co vû i_ i o in ru o OPERATING FORCE: 2 0 0 g f~ 3 5 0 g f COLORS BODY: Black CONTACT RESISTANCE: 2 0 m fl Max.

Contextual Info: Rev APPROVED: DATE:_ - Description AWO# 10597 Date 10/20/10 RELEASED Appr TITLE: .098 [2 .5 0 ] .150 [3 .8 0 ] B Positions: 2 th ru 10 A = .100 [2 .5 4 ] x No. o f Positions + .008 [0 .2 0 ] B = .100 [2 .5 4 ] x No. o f Spaces SPECIFICATIONS: Material:

Scans-048

Abstract: DSAGER00039 U882 bmc 8-e
Contextual Info: B e f e h l s l i a t e f ur den Blffl U 881/ U 882 zusam m engestellt voni P r o f. Dr. s o . teohn. J . Zaremba Selrtion Elektronilr dor H um boldt-U niversltat ru B e rlin A p ril 1984 -7 Kontroll-und Sttuerleilungmi Port 0 Nibble-pro­ grammierbar <

lm3298

Abstract: LT150A IN4002 LT1004 LT1033 LT1033C LT1033M 15v linear regulator
Contextual Info: LT1033 3A. Negative Adjustable Regulator DCSCRIPTIOfl F c n ru R c s • ■ ■ ■ Guaranteed 1% Initial Voltage Tolerance Guaranteed 0.015%/V Line Regulation Guaranteed 0.02%/W Thermal Regulation 100% Burn-in in Thermal Limit nppucmions ■ ■ ■ ■

IGBT 12n60a4D

Contextual Info: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Semiconductor F eb ru ary 1999 D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

QQ17725

Abstract: 50pa60c
Contextual Info: INTERNATIONAL RECTIFIER bSE 4Ö5545E QQ17725 G44 ru -^ .o o / Provisional Data Sheet International S Rectifier HEXFRED HFA50PA60C u l t r a f a s t , s o f t r e c o v e r y d io d e Major R a tin gs and Characteristics per Le g C haracteristics U nits

BCR12DM-4

Abstract: bcr12dm BCR12DM-10 BCR12DM-12 BCR12DM12 equivalent BCR12DM-8 330B BCR12CM-10 BCR12CM-12 BCR12CM
Contextual Info: - o M t tö H J iü if f l H f f li O t ! ' 7 7,'< -> • < — -> a > a f f li • "< U / b £ : ( ^§- I drm Vtm BC R12CM -4 BC R12CM -6 BC R12CM -8 BC R12CM -10 B C R 1 2 C M - 12 V d sm 300 400 600 700 800 Vd ru 200 300 400 500 600 ìiW 5e & F »3 I± 8 ,

Contextual Info: /~ ru n m _ TECHNOLOGY LTC1147-3.3/LTC1147-5 High Efficiency Step-Down Switching Regulator Controllers F€flTUR€S D€SCMPTIOn • Very High Efficiency: Over 95% Possible The LTC1147 series are step-down sw itching regulator ■ Current Mode Operation for Excellent Line and Load

Contextual Info: F-POfi-1 SIJPPI FMFNT 2m m POWER PLANE SPECIFICATIONS For complete specifications see www.samtec.com?QTT or www.samtec.com?QST LEAD STYLE NO. PINS PER ROW QTT Insulator Material: 10 th ru 50 Phosphor Bronze Contact Material QST : No. of positions x _ (2,00) .0787+ (0,25) .010

Contextual Info: /ru im LTC49Q TECHNOLOGY Differential Driver and Receiver Pair F€flTUR€S D€SCRIPTIOi1 • Low Power: Iqc = 300|oA Typical ■ Designed for RS485 or RS422 Applications ■ Single 5V Supply ■ -7V to 12V Bus Common-Mode Range Permits ±7V Ground Difference Between Devices

Contextual Info: r ru v m TECHNOLOGY _ LT1271/LT1269 4A High Efficiency Switching Regulators D C S C R IP T IO n F€RTU R€S The LT 1271 and LT1269 are monolithic high power switching regulators. Identical to the popular LT1070, except for switching frequency LT1271 = 60kHz, LT1269

Rx51

Contextual Info: SIL31 250A : Outline Drawings GEIUERAL-USE RECTIFIER DIODE Features • H ig h reverse v o lta g e c a p a b ility • X £ y K '<—XWi S tu d m o u n te d • f f l j i * : A p p lic a tio n s • B attery c h a rg e rs B ru sh -le ss g e n e ra to rs

Contextual Info: ISOCOH COMPONENTS LTD 7SC D IflflbSlD DDDG20? 37b ISO D MCT 6 Replacement for IL CT6 DUAL CHANNEL OPTO-ISOLATOR INC. 274 E. HAMILTON AVE. SUITE F •CAMHBEl C x A. 95008 O' -1.1, Package D im ensions in Inches (mm) -* ~ rU I I 0 55 Pin Configuration FEATURES

TRANSISTOR BC 545

Contextual Info: MOTOROLA O n to r H iin r in ru iM iit SEMICONDUCTOR TECHNICAL DATA by MTDF1P02HD/D Designer’s Data Sheet M T D F 1P 0 2H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor DUAL TMOS POWER MOSFET

Contextual Info: HI5746 D a ta S h e e t F e b ru a ry 1999 F ile N u m b e r 4 1 2 9 .4 10-Bit, 40 MSPS A/D Converter Features The HI5746 is a monolithic, 10-bit, analog-to-digital converter fabricated in a CMOS process. It is designed for high speed applications where wide bandwidth and low

rosemount 118

Abstract: rosemount 118 mf rosemount 118mf Rosemount RTD 118mf 74Cb6 Rosemount 118mf 1000 an60c 1560P LT1001
Contextual Info: _LT1QQ1 u i m TECHNOLOGY , Precision Operational Amplifier F c n ru R c s D C S C R IP T IO n • Guaranteed Low Offset Voltage The LT1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular atten­

Contextual Info: DS21Q41B PRELIMINARY DALLAS DS21Q41B Q u a d T I Framer SEMICONDUCTOR FEATURES FUNCTIONAL DIAGRAM • F o u rU DS1/ISDN-PRI framing transceivers • All four framers are fully independent • Frames to D4, ESF, and SLC-96 formats • 8 -b it parallel control port that can be connected to

2N2483

Abstract: 2N2484 2n 2483
Contextual Info: 2 N 2483 * 2 N 2484 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X Preferred device D isp o sitif recommandé - LF small signal amplification low noise A m plification B F p etits signaux (faible b ru it)

Contextual Info: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT