F B F 41 S P S 7 N 60 B Search Results

Contextual Info: TABLE 2 No OF POS POSITIONS POLARIZED -05 -08 -20 -30 -40 -50 -60 -70 3, 4 5, 6 15, 16 21, 22 31, 32 41, 42 31, 32, 63 & 64 53, 54, 115 & 116 S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0 P H O N E : 8 1 2 .9 4 4 .6 7 3 3 F A X : 8 1 2 .9 4 8 .5 0 4 7

BAY41

Abstract: BAY43 Q60201-Y bay 42
Contextual Info: BAY 41, BAY 42, BAY 43 Silicon planar sw itching diodes Silicon planar diodes BAY 41, BAY 42 and BAY 43 are suitable for high-speed, medium-current switching applications. They are supplied in glass-cases 51 A 2 DIN 41880 D O -7 . The cathode is identified by a colour ring.

HERA86G

Contextual Info: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95

Contextual Info: Special contact arrangements Requirements for more complex circuits prompted Amphenol to provide inserts not covered by the MS drawings. Illustrated here and on the following pages are insert layouts which have from one contact high tension to the 104 contact insert in shell size 44.

IRK E78996 701819-303ac

Abstract: I27900
Contextual Info: Bulletin I27131 rev. F 02/02 IRK.41, .56 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved

BAY41

Abstract: tu 104 BAY42 BAY43
Contextual Info: BAY 41 BAY 42 BAY 43 S iliziu m -P lan ar-S ch aitd io d en Die Silizium-Planar-Dioden B A Y 41, B A Y 42 und B A Y 43 im Glasgehäuse 51 A2 DIN 41 880 D O -7 , eignen sich zum Einsatz als schnelle Schaltdioden bei mittleren Strömen. Die Kathode ist durch einen Farbring gekennzeichnet.

NTC 20D-20

Abstract: 7400P s427400 IC TTL 7400 input leakage current 6400P/P1L-6400/6460/6480P
Contextual Info: TMS41 6400, TMS41 6400P, TMS41 7400, TMS41 7400P T M S 426400, TMS426400P, T M S 427400 , T M S 4 2 7 4 0 0 P 41 9 4 3 0 4 -W Q R D B Y 4-BIT H IG H -S P E E D D R A M S SMKS881B - MAY 1995 - REVISED AUGUST 1995 Electrical characteristics for T M S 416400/P and

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: HA12203NT/HA12204NT Audio Signal Processor for Cassette Deck Dolby B-type NR with Recording System HITACHI ADE-207-222B (Z) Target Specification 3rd Edition Jun. 1999 Description HA12203NT is silicon monolithic bipolar IC providing Dolby noise reduction system*1, music sensor

diode D214

Abstract: ZX-08
Contextual Info: 4ÔSSMS2 QQlbb72 Q'ìS International ¡i»r 1Rectifier INR s e r ie s irk .26, .41, .56, .71, .91 ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INTERNATIONAL RECTIFIER Features I E le c tric a lly is o la te d base p la te • 3 5 0 0 V RMS is o la tin g v o lta g e

SCR S6025L

Abstract: S1055M SCR S1055m S4025L S4004F1 S8025 scr S1015L s8020l scr S1012R s6020l
Contextual Info: • & > 1 A m TECCOR ELECTRONICS, INC. A SIEBE COMPANY 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 T O -2 1 8 A C T O -9 2 T O -2 0 2 A B T O -2 1 8 X THERM OTAB T O -2 2 0 A B SCRs 1-70 Amps G E N E R A L IN F O R M A T IO N

Contextual Info: QWL contact arrangements front face of pin insert or rear face of socket insert illustrated B A D A C B A C B Insert Arrangement 10S-2 12S-3 12S-4 12-5 14S-1 14S-2 Service Rating A A A D A Inst. Number of Contacts 1 2 1 1 3 4 Contact Size 16 16 16 12 16 16

Contextual Info: MITSUBISHI LSIs M5M44100AWJ, J, L,TP, RT-6, -7,-8,-10 FAST PAGE MODE 4194304-BIT 4194304-W 0RD BY 1-BIT DYNAMIC RAM DESCRIPTIO N T his is a fa m ily o f 4 1 9 4 3 0 4 -w o rd by 1-b it d y n a m ic R AM S, PIN C O N F IG U R A T IO N (TOP V IE W ) fa b rica te d w ith th e high p e rform ance CM OS process, and

IPM module lg

Abstract: diode gi 9300 irf 5110 ScansUX7 D183 D184 D185 HALF WAVE 45 E 57 20-C1V D187 D188
Contextual Info: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e

AM B8 202

Abstract: 24A12
Contextual Info: Technical Data Glenair Series ITS and ITS-RG MIL-DTL-5015 Type Reverse Bayonet Connectors Contact Arrangements Front View of Pin Insert 1 CONTACT Arrangement Contact Size Service rating 16-2 12 E 16-12 4 A A Arrangement Contact Size Service rating 18-7 8 B

sy 320 diode

Contextual Info: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vbs 500 V b ^DS on Package Ordering Code 4.5 A 1.5 Í2 TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values

thyristor YS 160 004

Abstract: HIGH VOLTAGE THYRISTOR D183 D184 D185 D186 D187 D188 irf 940 lem current lt 100
Contextual Info: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e

S6050

Abstract: sq565j C122E scr scr C122E S400BL S1012L S2003L C122D SCR thyristor S6025L C122E
Contextual Info: T E C C O K E L E C T R O N IC S 887281? TECCOR IN C "73 ELEC T R O N IC S JN C ¡D E 73C O C lO lO B fl 0 1038 D T 4 ~â5~0l [TECCOR E L E C T R O N I C S , IN C . 18 01 H U R D D R IV E I R V I N G , T E X A S 75 0 3 8 -43 8 5 P H O N E 2 14 /5 8 0 -15 15

THYRISTOR BST N 45 B 90

Abstract: thyristor bst m 45 90 Thyristor bst 2 HALF WAVE 45 E 57 20-C1V thyristor YS 160 004 11111I D226 diode irkt91-18 L9500 thyristor bt 3A
Contextual Info: i * fl5 5 4 5 2 International ü ^jRectifier □ O lbb'JO GOfl IIN R s e r ie s ir k . 26 , .41, .56 , .71, .91 HIGH VOLTAGE THYRISTOR/ DIODE ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features IN T E R N A T IO N A L R E C T IF IE R • ■ E le c tric a lly iso lated b a s e plate

Contextual Info: 20 M K 19 17 18 ASSEMBLY PART NUMBER HOUSING PART NUMBER COLOR 33481-0401 33541-0401 BLACK 33481-0402 3 35 41 - 0 4 0 2 3 3 481- 0403 33541-0403 33481- 0404 KEYING OPTION MAT S E A L c AP 16 C A V I T Y TYPE & STAUS X = PLUGG ED 1 2 15 14 13 MA T S E A L 1N S E R T / T P A

FX81

Abstract: mr 4.480 ICL578-0003 60B23
Contextual Info: HQ R FX8 Series SMT Connectors with 3-mm or Greater Stacking Heights and 0,6=mm Spacing . n GENERAL r 7 The FX8 Serves of 0.6-mm patch board mounting SMT connectors can be used with 3 mm or greater distance between the boards. They are designed with the objectives of mrnraturrzatron, space-saving, and multiple

TRANSISTOR SE 135

Abstract: BUK455 BUK455-50B BUK455-50A T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE SSE D m Ljfci53ci31 □□504ÔS 7 • Po w erM O S tra n s isto r B U K 455-50A B U K 455-50B T-31-Ì3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

5N555

Contextual Info: 7 DRAWI NG THIS MADE IN DRAWI NG THIRD IS ANGLE UNRUBLI S H E D , COPYRIGHT 19 6 B 2 8 4 PROJECTION RELEASED BY AMP FOR L OC PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST REV I 5 I 0 N 5 DF RESERVED. ZONE LTR D E S C R I P T I ON DATE REV PER OH 1 4 - 0 2 2 6 - 0 4

BUK455-60A

Abstract: BUK455 BUK455-60B T0220AB cr35 transistor
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D E9 711002b DDma7b Philips Semiconductors PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies