F 948 Search Results

DIN 41 612 Connectors

Abstract: 09 03 164 6850 harting 09 06 000 6421
Contextual Info: HARTING Connectors DIN 41 612 Page 01.11 Pages 01.12 f Page 01.16 2B Page 01.17 Page 01.18 3B Page 01.19 Pages 01.20 f C Pages 01.22 f Pages 01.28 f 2C Pages 01.30 f Pages 01.32 f 3C Pages 01.34 f Page 01.41 M Page 01.42 M-flat Page 01.43 M invers Pages 01.44 f

Cain-Pollock

Abstract: weller 52402 35824
Contextual Info:
     
        !   Millenium Sales, Inc. 1050 Grand View Blvd. Huntsville, AL 35824 Phone +1 256 461-9482 E-mail millenn@gateway.net Cain Technology 16525 Sherman Way, Unit C-4 Van Nuys, CA 91406-3753 Phone (818)904-9392

rs-flip-flop

Abstract: "NAND Gate" f 948 RS flip-flop rs-flip-flop 948 9109 micrologic DTL Fairchild fairchild 951 949 dtl
Contextual Info: FAIRCHILD DIG ITA L DTL DTL M IC R O L O G IC Cont'd Item 1 DEVICE NO. 948 Description Logic/Connection Diagram Package(s) G18 3I,5F,6A,9A RS F lip -F lo p 2 949 Q uad 2 -In p u t N A N D Gate G10 3I,5F,6A,9A 3 950 A -C C o u p le d RS F lip -F lo p G19

TAA 981

Abstract: LC7364J ti77 FT-X1 LT 989
Contextual Info: '£ £ □ —KNo. 3 19 8 SAfiYO - a - X LU7¿04kJ DTMF/PULSE • / \ a7 A ^ > | I CMOS LSI LC7364JÍ3;, r ~ 7 D TM F/O U TP U T-PU LS EfS SffliM ' T=7 CMOS LSIT-3B m 1 «S £H m T f i f t i ' f £ l f q jflg « CM OS y □ ■ i z ^ S S C D f i ^ i f t f t V fc S »

Contextual Info: Sockets LOADING PATTERNS c K & J - ZXBZIU — oooo— ••c ra o # # 88S 88 .400 Oi 044A 8x8 GRID LOW TEMP 068B 10x10 GRID 084A 12x12 GRID 085D 11x11 GRID 096B 11x11 GRID 108A 12x12 GRID gzgzZZX X X T .675 w M » > t f f f f f f »» " JxxxxxT " IQ— — • • • O

transistor MWTA 06

Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
Contextual Info: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %

Contextual Info: Sipex I lf iii iS ll lil S B I l B i I ' " 11 * •1 " 1 n 1 1 ! i i'r I-, ■1<f • ! i 1f 11■! ' 11<>!-f ! j 11i 111111Ti 1111f 11Ì : (.11fV| ^ OMpcniV'n " SIGNAL PROCESSING EXCELIENCE " 1 " 11,1 11 r 11 f 1 1 J 1 ' ' ' , 1111 I I ‘ i - t l ' f l t H f t j | * | 1 -fiV ^ ‘i f

NJG1308F

Abstract: V00-3 56008-25-108PW+V003 65044-001-513+[V003]
Contextual Info: NJG1308F • z JG 1 3 08 FI1 IK -f y ^ ; U » í í a B « 5 t S * ± f f l i É ¿ L / f c f f i ; K í R « 3 i E K 5 - f A - rs > 7 ■ » 8 0 0 MH . 5GHzw i c T -r. a •ffiW B E ftfË •ÎS ;lK ÏÊ â ît •/j s m /tv ir-i? # - I E « i E V D D = + 3 . OV t y p

ST-100SX

Abstract: tfk T7 iIl04 ir43 1S1588 TC4050B tfk 352 TFK 351
Contextual Info: TOSHIBA [7 ] [7 ] bivios C 2M 0 S ™ IC lS U f f il'± ( 7 5 Z :'f f 3 f t ¿ :* g S ^ 1. tz (>- l ía ia t t ß p ^ Ä x % o (D Z . T f ili1 É < 7 [p i± ír 5 5 » T t 0 m í^ n w m & z ¿ í m ) i Ä ^ t S < m - Ä S ^ « p np ( ä I ^ S i ) L t z V ¡ f t P t t «

IN5480

Abstract: 423PD10AE1 IN1733 IN548 IN5482 425SH6AB1 IN5484 IN1730 IN5478 NKV20F
Contextual Info: 2323489 CONDITIONING SEMICOND DVC f* r :• a , f t -, vK .r " - r . Type No. z Q 5 o Q o f I v" ± £- " i * -V.V -V _ ; :> V f? p f Max. Peak forward Voltage Vfm 40 40 40 40 40 40 0.070 0:042 0.021 0.017 0.014 0.007 3 3 2 2 2 1 0.01 0.01 0.01. 0.01 0.01

SRS552

Abstract: SRS552N ug2l TGL 9483 ge c91 20KU
Contextual Info: Typ und Verwendung SRS552 N TG L 9483 Strahlungsgekühlte Sendepentode für HF-Verstärkung und als Oszillator, auch in Trioden­ schaltung, ins­ besondere beim Amateurfunk und bei elekfromedizinischen Geräten. Auch für Impulsbe­ trieb geeignet Heizung

Contextual Info: LOADING PATTERNS o O 0000*9 ogo 88838 — oooooo— f f f f * -N M M Hi cM — M fffoooofff _o — ' O M 88, 990000 .400 8» 044A 8x8 GRID LOW TEMP 88 Of 068B 10x10 GRID ► O_ _ O o .500 068C 11x11 GRID “ ‘'O O O O O O '* ‘ _JO 88

TPF400

Abstract: TPF-80 TPF90 TPF300 31936 TPF450 TPF60 TPF-16 TPF-250 TPF-90
Contextual Info: MICRO S EM I CORP/ R P 14E N D I b llt iD 4D DDODOBS T I MICRO s:% € = 8 = a r-i A MICBOSEMI COMPANY f '- 2 x 3 Solid Pac High Voltage Rectifiers Three Phase Full Wave S ER IE S I : v: PART N U M B ER T P F H V -1 6 T P F H V -2 0 T P F H V -3 0 T P F H V -4 0

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

SGM2004M

Abstract: sgm2004
Contextual Info: SGM2004M SONY. GaAs N-channel Dual Gate MES FET Description S G M 2 0 0 4 M is an N -chan nel d u a l g a te G a A s M E S F E T f o r U H F ba n d lo w -n o ise a m p lific a tio n . T h is F E T is s u ita b le f o r a w id e range o f a p p lic a tio n s in c lu d in g T V tu n e rs, c e llu la r ra d io s

FSEM30

Abstract: BFR360F TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 0 A 900 MHz Low Noise Amplifier Using the B F R 3 6 0 F T r a n s i s t o r i n T S F P - 3 P ac k a g e R F & P r o t e c ti o n D e v i c e s Edition 2008-02-22

3G3DV

Contextual Info: OMRON 3G3DV Drive Series All the power you need, when and wherever you need it. » » Single drive solution that’s powerful, flexible and efficient » »S u i t a b l e fo r C a te g o r y 3 i n s t a l l a t i o n s » » o f fe rs yo u a w i d e ra n g e o f f u n c t i o n s f ro m P LC f u n c t i o n a l i ty

Contextual Info: MIL-C-26482, Series I Connectors KPT/KPSE Straight Plugs MS3116 MS service class E, F, J, P MS3126 (MS service class E, F, P) KPT06 Q THD Q THD GROMMET FOR TYPES A, B, J & P POLARIZING GROOVE KPSE06 A DIA. GROMMET FOR TYPES E & F A DIA. G SEE TERMINATION

4087 1328

Abstract: lp 1610 ms3126
Contextual Info: MIL-C-26482, Series I Connectors KPT/KPSE Straight Plugs KPT06 MS3116 MS service class E, F, J, P MS3126 (MS service class E, F, P) Q THD Q THD GROMMET FOR TYPES A, B, J & P POLARIZING GROOVE KPSE06 A DIA. GROMMET FOR TYPES E & F A DIA. G SEE TERMINATION

Contextual Info: REVISIONS Multicomp A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT O F SPC TECHNOLOGY. DCP # DESCRIPTION REV 2070 Released DÖC. Nö. SPC -F005 * E f f e c t iv e ! 7 / 8 / 0 2

3059 npn transistor

Abstract: A 3198 C100 LC7364J 4X4 push-button matrix keyboard
Contextual Info: Ordering num ber: EN3198 CMOS LSI F SAXYO LC7364J No.3198 i r DTMF/PULSE Switchable Dialer The LC7364J is a DTM F/OUTPUT-PULSE dialer CMOS LSI w ith redialJ^rfction for use in pushbutton telephones. F e a tu r e s 1 Low voltage CMOS process for direct operation from telephon

AWG27

Contextual Info: PRODUCT NO -R ELEA SED SEE TABLE °/x/7i B REVISED ECR*Ì635Ì s REVISED.ECR*J 8455^' 7 fa / h 0 REVISED ECR*J 9487 S y i/it/H Ç E REVISED ECR *J8540.f.> a/ir/tf F REVISEQ ECN 1099 mT i z / ^ 14.859 .s e s BL_52 '.3S0 * I ¥ It 43 450 H = R 6.60*0.076 .260 *.003

S2559A

Abstract: S2559C S2559E plotter hp S2559B hp plotter 3580A 2559E
Contextual Info: AMI A S ub sid iary o f G ould Inc. S2559A/B/E/F DTMF TONE GENERATOR Features □ W ide Operating Supply Voltage Range: 3.5 to 13.0 Volts A,B 2.5 to 10 Volts (E,F) □ Low Power CMOS Circuitry A llow s Device Power to be Derived Directly from the Telephone Lines or