F 540 NS Search Results

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

Contextual Info: EPSON P F 476-06 SEDI 540 Dot Matrix LCD Driver • Dot Matrix Drive with a 1/3 or 1/4 Duty • Built-in Display Data RAM • 4 C O M Outputs + 73 SE G Outputs • D E S C R IP T IO N The SEDI 540 is an LCD driver LSI intended mainly for segment displays. It generates LCD driving signals from

Contextual Info: HITACHI AMERICA/ ELECTRON IbE D • 4MTb201 0GG3fl?3 fl ■ LM268CXP FEATURES ■ 740 W dot x 540(H ) dot graphic and alphanumeric display ■ Attachable controller LSI: H D 6 3 6 4 5 F /H D 6 4 6 4 5 F / H D66840 (See page 14, 22) ■ Color tone: Yellowgreen

75 LS541

Abstract: 74LS540DC 74LS540PC
Contextual Info: 540 • 541 CO NNECTION DIAGRAMS PINOUT A r / c U ? ' ¡4LS/74LS540 i^4LS/74LS541 ^ f b ( o 9 % OCTAL BUFFER/LINE DRIVER (W ith 3 -S tate Outputs DESCRIPTION — The ’LS540and ’LS541 are sim ilar in function to the 'LS240 and ’LS241, respectively, except that the inputs and outputs are on opposite

BFP-540

Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05605

Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 VDS VDGR ID RGS = 20 kΩ IDM VGS PD Tj, Tstg Visol humidity climate Tcase = 100 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 180 112 540 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A

Contextual Info: f Z 7 S C S -m O M S O N JÆ, I M » I [ L I ^ [ M i * S T 7 5 C 530 S T 7 5 C 540 SUPER INTEGRATED DEVICES WITH DSP, AFE & MEMORIES FOR TELEPHONY, MODEM, FAX OVER INTERNETS, POTS LINES PRELIM IN ARY DATA SUMMARIZED FEATURES (for detailed features, see page 4

ci 7475

Abstract: 7475 D latch MC9375 7477 D latch 7475 data latch 7400 series list 7400 TTL TTL 7400 TTL 7475 MC5475
Contextual Info: f'vlTTL M C 540 0 /7 4 0 0 series QUAD LATCH M C5475 M C9375 M C 5477 M C 9377 • • • • MC7475 MC8375 M C7477 MC8377 MOTOROLA R ¿ (r 0 0 4 4 7 6 /O . • cl d S u f f i x F f o r 1 4 - p i n c e r a m i c p a c k a g e •Uci s»' ü 0 7 ' M C 5 4 ? , •7 4 7 7, M C 9 3 7 7 . 8 3 7 7 .

74HC540AP

Abstract: c541a
Contextual Info: TC74HC540AP/AF/AFW TC74HC541AP/AF/AFW OCTAL BUS B U FFER TC 74H C540A P/A F/A FW TC74H C541A P/A F/A FW IN V E R T IN G .3 - S T A T E O U T P U T S T h e TC 74 H C 540 A /TC 74H C 541A are high speed C M O S OCTRAL BUS BU FFERs fa b ric a te d w ith silico n

Contextual Info: s e MIKRD n A b s o l u t e M a x im u m R a t i n g s S ym bol C o n d itio n s ' V ds V dgr Id Values 200 200 180 112 540 ±20 700 55 . .+150 2 500 Class F 55/150/56 Rgs = 20 k ii Tcase = 100 °C Idm V gs Pd Tj, Tstg Visol humidity climate AC, 1 min DIN 40 040

M5M417405CJ

Abstract: M5M417800 MSM417805CJ-7 M5M417800CTP-7 M5M417405CTP-5 M5M418165CTP-5 M5M417405CJ-6 417805CJ-5 m5m416100cj M5M417800CTP
Contextual Info: MEMORIES • 16M-Bit DYNAMIC RAMs ■A . . , . • Memory [ Memory capacityj Configuration _ L . Function mode . M ix. access time ns Typ. power 50 495 60 405 Fast Page 16Mx1 4K Refresh Cycle Self Refresh (— * Si 70 340 50 495 60 405 70 340 50 495 Fast Page

BCY791x

Abstract: BSW 32 BF139 bsw21 bcy 79
Contextual Info: Silic on P N P transistors, general purpose continued Tamb = 25 o c Transistors P N P silicium , usage généra! (suite) ts V C EO (V) h21E h2 1E* min 'C v CEsat (V) (mA) max fT <ns) IC^B (MHz) toff* TSi 76 (mA) min max Page Case ^tot VCER# Type B oitie r

Contextual Info: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

AN-1203

Abstract: AM Transmitter block diagram tag e9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14497 PCM Remote Control Transm itter p s u f f ix if II li PLASTIC DIP I HI CASE 707 The M C14497 is a PCM rem ote control tra nsm itte r realized in CMOS technology. Using a dual-single FSK/AM frequency bi-phase modulation, the

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

Contextual Info: SAMSUNG ELECTRONICS INC 42E D B 7^4142 KMM5910Q0B GülQ42b 7 QSMÛK DRAM MODULES 1 M X 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: T he Samsung K M M 5 9 1 0 0 0 B is a 1 M b it X 9 Dynamic RAM high de nsity m em ory module. - The Samsung

Contextual Info: SILONEX INC 47E D Ô 2 5 S 5 7 1 00003513 fl • SXI N S L -2 8 & N SL -2 8 A A CO SILONEX O P T O IS O L A T O R S T - v i- e / ■1 ill TEST CONDITIONS CHARACTERISTICS NSl-28. TYP. MX. . HIH. HSL-28AÄ TYP. HAX. . . UNITS . - •lur if . tax fwd current

BTO18

Abstract: sc 107 b BC190B BC190 BC140 BC 241 bo 139 BC107 2N3708 2N3707
Contextual Info: Silicon NPN transistors, general purpose continued Tamb = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76 Page

Contextual Info: PRELIMINARY SDR950M&Z thru SDR952M&Z DEVICES, INC • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■ Hyper Fast Recovery: 35 nsec Maximum High Surge Rating Low Reverse Leakage Current

ixys dsei 2x61

Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

dsei 60-12a

Abstract: ixys dsei 60-12a
Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM DSEI 60 IFAVM = 52 A VRRM = 1200 V = 40 ns trr C A Type TO-247 AD V 1200 DSEI 60-12A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 60 IFAVM = 60 A VRRM = 1000 V = 35 ns trr C A Type TO-247 AD V 1000 DSEI 60-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 600 VRRM Type C IFAVM = 60 A VRRM = 600 V = 35 ns trr TO-247 AD V 600 C DSEI 60-06A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5