F 407 DIODE Search Results

Contextual Info: ^ litron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 3301 ELECTRONICS WAY • WEST PALM BEACH,FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • F A X. (407) 863-5946 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNI T S SYMBOL Drain-source Vo It.( 1 )

GH13D

Contextual Info: Æ lltron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATING S PARAMETER (Rgs-I.OMo) (1) Gate-Source Voltage Con t inuous

Contextual Info: J H l t r o n -PRODUCT DEVICES.INC. ¡177 BLUE H E R O N BLVD. • RIVIERA BEACH, FLORIDA 33404 ^ E L : 407 848-4311 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo 1 f .( 1 )

Contextual Info: JHltron PRODUCT CÂTÂLO' DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-43U FAX: (407) 863-5946 C r ' U f T T T L / ’V CD i r i r n r bLHU I IKY CDOl P U W/ t K nrpT REClIrlt-KS MAXIMUM RATINGS PER DIODE 45V, SYMBOL PARAMETER

2N6522

Abstract: ir6062 IR5064 IR6060 MM6427 D45E11 IR6002 2N999 IR5000 IR5253
Contextual Info: SE MIC OND UC TO R TECHNOL OGY GSE D | fll3b4Sfl Ü0DD23S T r_ T4 7 / SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.t. Jay^treet ¿7 stuarti F |0rida 34997 7" - 33 3 / 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 ' NPN & PNP' SILICON DARLINGTON TRANSISTORS

Contextual Info: Æ lltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1177 B L U E H E R O N BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL 407 848-4311 * TLX: 51-3435 » F A X : (407) 863-5946 400V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo It.(1)

Contextual Info: Æutran PRODUCT D EVI CE S .I NC . N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST P ALM BEACH, FLORIDA 33407 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 51-343S « F A X : (407) 863-5946 ABSOLUTE MAXIMUM 1000V, 4.4A, 4 . on RATINGS PARAMETER UNITS SYMBOL

Contextual Info: JTlitxan PRODUCT DEVICES.INC. 1177 S L U E H E R O N BLVD. • R I V I E R A BEACH, F L O R I D A 33404 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source

Contextual Info: ^ litr o n PR O DU CT DEVICES.INC. 1 1 7 7 BLUE H ERON BLVD. • RIVIERA BEACH, FLORIDA 33404 T E L : 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 900V, 4.0A, 2.4 Q SYMBOL Dr ai n-source Volt.(l)

2SC15-0

Contextual Info: Æwtron DEVICES.INC. 3301 E L E C TRONICS WAY • WEST P ALM BEACH. FLORIDA 33407 TEL: 407; 848-4311 • TLX: S I -343S • F AX: (407 863-S946 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER -100V.-19A. SYMBOL D r a m - s o u r c ! Vo 1 t .( 1 )

tegra 250

Abstract: tegra 2
Contextual Info: Æwtian PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY » W E S T PALM BEACH.FLORIDA 33407 T E L : 407 848-4311 • TLX: 51-3435 « F A X : (407) 863-5946 ABSOLUTE 600V, SYMBOL D rain-sou rce D rain-G a te Vo I t . ( 1 ) V oltage (Rgs=1.0Mo) (1) G ate-Source V oltage

N 407 Diode

Contextual Info: Æutron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRO NICS WAY • WEST P ALM BEACH. FLORIDA 33407 TEL. 407 848-4311 • TLX: SI-3 43 5 « F AX : (407) 863-5946 1000V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a i n - S o u r c e \/o 1 t . ( 1 )

Contextual Info: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER

NT 407 F TRANSISTOR

Abstract: NT 407 F MOSFET TRANSISTOR
Contextual Info: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T

Contextual Info: Æiltron 3301 E L E C T R O N I C S WAV. TEL: 407 048-4311 PRODUCT CÂTÂL ' DEVICES,INC. N-CHANNEL ENHANCEMENT MOS FET W E S T P A L M BE AC H. F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l)

Contextual Info: Æ iitr o n PRODUCT DEVICES.INC. 1 1 7 7 B L U E H E R O N BL VD . • R I V I E R A B E AC H. F L O R I D A 3 3 4 0 4 T E L : 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 • F A X : (407) 8 G 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS

SDF034

Contextual Info: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)

Contextual Info: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )

Contextual Info: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U

Contextual Info: / “litron PRODUCT DEVICES.INC. 3301 E L E C T R O N I C S W A Y » W E S T P A L M B E A C H , F L O R I D A 33407 T E L : 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 • FA X: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET 600V, ABSOLUTE MAXIMUM RATINGS

Contextual Info: SK25GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$YZ ULVV P WL F B- K XV N$ LW F MV F [ LV P BS K ULM N$ UV `- B- K LM N$ LX F B- K XV N$ Ua F MV F D$YZK L : D$0%& *'-) P$$ K ¥VV P] PEQ ^ LV P]

sk35gd126

Contextual Info: SK35GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$Z[ ULVV P WV F B- K XV N$ YL F ¥V F ] LV P BS K ULM N$ UV b- B- K LM N$ YW F B- K XV N$ LY F ¥V F D$Z[K L : D$0%& *'-) P$$ K ^VV P_ PEQ ` LV P_

Contextual Info: SK10GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$XY ULVV P UM F B- K WV N$ UU F UZ F [ LV P BS K ULM N$ UV _- B- K LM N$ LM F B- K WV N$ U` F aV F D$XYK L : D$0%& *'-) P$$ K ZVV P¥ PEQ ] LV P¥

Contextual Info: SK15GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$XY ULVV P LL F B- K WV N$ UM F ZV F [ LV P BS K ULM N$ UV `- B- K LM N$ LM F B- K WV N$ Ua F ZV F D$XYK L : D$0%& *'-) P$$ K ¥VV P] PEQ ^ LV P]