F 235A Search Results

LTC1962EMS8-2.5

Abstract: LM136-2.5
Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%525525&33'5 $E#$E55 $F ED)5*)+ 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5$F)ED)5*)+5-E5*FD";0FED5

Contextual Info: 2342156758692 755BCA15DAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA EFAAA 3*& D'' # @ / 8B5:7BF9 2A

SP235ACP

Contextual Info: S iC S X SIG NAL P R O C ES SIN G E X C B i- E N C f S SP230A/234A/235A/236A/237A/238A/239A/241A SP235B/236B/241B +5V Powered Multi-Channel RS232 Drivers/Receivers FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Operates from Single 5 V Power Supply

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 NEMA ETB SELECTOR CHART High Density Series 100 Medium Duty Seri r " i f Mounting AWG Wire Range HIGH DENSITY MINIATURE HIGH DENSITY SINGLETIER HIGH DENSITY DOUBLETIER Direct Mount, Miniature Direct Mount,

CD42

Abstract: CD421660 CD47
Contextual Info: CD42_60 CD47_60 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING A C F G Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

CD43

Abstract: CD431660
Contextual Info: CD43_60 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING A C F G Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other

69-206

Abstract: MCR235A MCR235B MCR235C
Contextual Info: MCR235A MCR235B MCR235C SERIES SILICON SERIES SERIES A d v a n c e In f o r m a t io n BEAM-FIRED* INTEGRATED GATE THYRISTORS BEAM-FIRED INTEGRATED GATE FAST SWITCH THYRISTORS 235 AMPERES RMS . . . designed fo r high-current, high-frequency applications in inverters,

gl415

Abstract: MZ1000 IGNITOR Z 400 M GL-415 Ignitron ignitor 1200Amp general electric
Contextual Info: FG -25 8-A DESCRIPTIO N A N D R A TIN G H• H SÊÊÊ «- f IM M fc i '. \ < WIlKÈemÊm s *' m E T I-1 1 1 PAGE 1 4-45 •ÒV' <> ■ M ü m ^ÊÊÊ IGNITRON SPEC IA L DESIGN FEATURES 1. Stainless-steel, seam -welded construction 2. U niform water cooling

l55a

Abstract: UL55A G535A g435 L54B G536a UL-55 G335A GB72A BUP46
Contextual Info: Power M anagem ent Division Sem elab B I-P O L A R POWER TRANSISTORS D iffused by S EM E F A B in G lenrothes and built by S E M E LA B in Lutterw orth are tw o ranges of high energy B i-P o la r transistors: • G 170 series of 4 die de sig ned fo r use in ve ry fast sw itching high voltage applications.

Contextual Info: BSM 200 GD 60 DN2 IGBT Power Module Target data sheet • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GD 60 DN2 600V 235A ECONOPACK 3

Contextual Info: BSM 200 GB 60 DN2 IGBT Power Module Target data sheet • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GB 60 DN2 600V 235A HALF-BRIDGE 1 Q67050-A1004-A70 Maximum Ratings

DIN45004B

Abstract: R2005240 Premier Devices
Contextual Info: Product Specification R2005240 Si Reverse, 5 – 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations

Contextual Info: SIPEX CORP bOE D • 6203711 DDD32hb Ô51 « S P X W ir N A V « IIU W V V,KV“ V SP230A/234A/235A/236A SP237A/238A/239A/241A SP235B/236B/241B +5V Powered Multi-Channel RS232 Drivers/Receivers ^ Corpor«bwi^ SIGNAL PROCESSIN O EXCELLENCE FEATURES ■ ■

Contextual Info: Preliminary Technical Information MMIX1F360N15T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol

Contextual Info: Advance Technical Information MMIX1F360N15T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

C213L

Abstract: CS2500 SP234ACP SP235ACP
Contextual Info: v S i p § >/V SIG N AL PROCESSING EXCELLENCE SP230A/234A/235A/236A/237A/238A/239A/241A SP235B/236B/240A/240B/241 A/241 B +5V Powered Multi-Channel RS232 Drivers/Receivers Operates from Single +5V Power Supply +5V and +12V — SP239A Meets All RS232D and V.28 Specifications

SW-45

Abstract: 24UNF
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2094/A SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series

fda032n08

Abstract: Power Mosfet 75V 120A
Contextual Info: FDA032N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed

Contextual Info: AP9970AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G BVDSS 60V RDS ON 3mΩ ID 235A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP1A003GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance BVDSS RDS ON ID D 30V 1.2mΩ 235A G ▼ RoHS Compliant & Halogen-Free

SD23

Contextual Info: Bulletin I2094 rev. A 09/94 SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics

Contextual Info: Bulletin I2094 rev. B 10/06 SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics

HD74LVCR2245A

Abstract: Hitachi DSA00395
Contextual Info: HD74LVCR2245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-235A Z Preliminary 2nd. Edition January 1999 Description The HD74LVCR2245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs