F 207 DIODE Search Results

Contextual Info: EPSON P F 207-05 SCI7660C/M DC-DC Converter •9 5 % Typical Power Efficiency •Voltage doubler •Voltage Conversion(Positive<-^Negative) • DESCRIPTION The SCI7660C/M CMOS DC-DC Converter features high operational performance with low power dissipation.

258-041

Abstract: RS 258-041 OEM24L 2N3706 AD636JH AD736JN digital power factor meter circuit diagram vr2, preset VR1 100K preset diode LMP
Contextual Info: Issued November 1993 016-207 Data Pack F Data Sheet Digital panel meter modules RS stock numbers 258-041, 313-479 backlit version These complete digital panel meters will measure and display up to ±199.9mV directly with an accuracy of ±1.0%. The small size and ultra-low power consumption, with their liquid crystal display make these

ha12159

Abstract: C114U HVR17 KR106 HVR hitachi ha1215 DYNAS
Contextual Info: ADE-207-060 HA12159 FM IF System for Use with the Dynas System Preliminary Rev. 0 Mar. 1992 HITACHI The HA12159 is an FM IF IC that incorporates a n ew te c h n iq u e th a t r a d ic a lly im p ro v e s th e sensitivity and selectivity o f FM receivers. With

Contextual Info: 2SK1414 207 7 U H U l t r a h i g h V o l t a g e S e r ie s V DSs = 1 5 0 0 V N Channel Power M OSFET £4230 F eatures • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C

TIS25

Abstract: 2N5045 TI TIS25 2N5047 jfet idss 10 ma vp -3 jfet idss 10 vp -6 3N208 T01A TIS27 TIS26
Contextual Info: s^ T e x a s In s t r u m e n t s Dual MOS, P-channel R A T IN G S TYPE B VG SSF C H A R A C T E R IS T IC S PTO T W IG S S F VGS V '< 3N 207 — 25 0 .6 -4 3N 208 -3 0 0 .6 —1 n A • pA V G S T H ) — 25 —3 —6 —3 —6 — 15 niin. m ax. m in.

diode fr 207

Abstract: 5SDD0135Z0400 5sdd0135z0200 0135Z0400 0135Z0200
Contextual Info: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 13 526

x band diode detector waveguide

Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Contextual Info: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

Contextual Info: SKiiP 432 GB 120 - 207 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

20ETS

Abstract: IR207DM16CCB
Contextual Info: Bulletin I0140J 09/00 IR207DM16CCB STANDARD RECOVERY DIODES Junction Size: Rectangular 207 x 157 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . SMV2042 SERIES HYPERABRUPT TUNING DIODES VHF AND UHF FREQUENCIES • • • • • • • Lower Phase N oise Superior Performance in H ighly Stable Oscillator Designs Uniform Capacitance / Temperature Coefficient

OCM226

Contextual Info: O K I electronic components OCM 2X6, 2X7 SERIES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The O CM 2X6 and O CM 2X7 Series are bidirectionsl AC optical MOS relays that are lower in cost than the OCM 2XO/2X1 Series. The input portion is a GaAs infrared light emitting diode. The output

b72L

Abstract: IFM D100 M2116 OCM206 OCM216 OCM217 OCM226 OCM227 OCM246 OCM247
Contextual Info: O K I electronic com ponents OCM 2X 6, 2X 7 SER IES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2X6 and OCM2X7 Series are bidirectionsl AC optical MOS relays that are low er in cost than the OCM2XO/2X1 Series. The input portion is a GaAs infrared light emitting diode. The output

EVL31-050

Abstract: EVM31-050A EVK31-050 EVK71-050 EVL32 ETF81-050 2DI75D-055A M101 M104 M105
Contextual Info: g j j j i BIPOLAR TRANSISTO R M O D ULES rnmmmHsM Ratings and Specifications H y • • • • 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s P o w er transistors and fre e w h e e l diodes are b uilt into one package. All term in a ls are insulated fro m m o u ntin g plate.

TMV2115

Abstract: Knox Semiconductor TMV2101 TMV2102 TMV2103 TMV2104 TMV2105 TMV2106 TMV2107 TMV2108
Contextual Info: KNOX SEMICONDUCTOR, INC. PLASTIC THRU HOLE GENERAL PURPOSE ABRUPT VARACTOR DIODES TMV2101 - TMV2115 TYPE NUMBER TMV2101 TMV2102 TMV2103 TMV2104 TMV2105 TMV2106 TMV2107 TMV2108 TMV2109 TMV2110 TMV2111 TMV2112 TMV2113 TMV2114 TMV2115 CAPACITANCE @ - 4 Vdc f = 1 MHz pF

Knox Semiconductor

Abstract: SMV2101 SMV2102 SMV2103 SMV2104 SMV2105 SMV2106 SMV2107 SMV2108 SMV2109
Contextual Info: KNOX SEMICONDUCTOR, INC. PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES SMV2101 - SMV2115 TYPE NUMBER SMV2101 ‡ SMV2102 ‡ SMV2103 ‡ SMV2104 ‡ SMV2105 ‡ SMV2106 ‡ SMV2107 ‡ SMV2108 ‡ SMV2109 ‡ SMV2110 SMV2111* SMV2112* SMV2113*

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

MV838

Abstract: MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV840
Contextual Info: KNOX SEMICONDUCTOR, INC. ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX 13.5 15.0 16.5 16.2 18.0 19.8 19.8 22.0 24.2 24.3 27.0 29.7

mv1650

Abstract: MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636
Contextual Info: KNOX SEMICONDUCTOR, INC. ABRUPT VARACTOR DIODES MV1620 - MV1650 TYPE NUMBER MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636 MV1638 MV1640 MV1642 MV1644 MV1646 MV1648 MV1650 CT DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz pF MIN NOM MAX 6.1 6.8

MV1652

Abstract: MV1654 MV1656 MV1658 MV1660 MV1662 MV1664 MV1666
Contextual Info: KNOX SEMICONDUCTOR, INC. ABRUPT VARACTOR DIODES MV1652 - MV1666 TYPE NUMBER MV1652 MV1654 MV1656 MV1658 MV1660 MV1662 MV1664 MV1666 CT DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz pF MIN NOM MAX 108 120 135 132 150 165 162 180 198 180 200 220 198 220 242 225

2DI75D-055A

Abstract: M104 ETF81-050 EVL32 M101 M105 M201 EVM-31 transistor bI 340
Contextual Info: g j j j i BIPOLAR TRANSISTO R M O D ULES rnmmmHsM Ratings and Specifications H y • • • • 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s P o w er transistors and fre e w h e e l diodes are b uilt into one package. All term in a ls are insulated fro m m o u ntin g plate.

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV1620 - MV1650 TYPE NUMBER Ct DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz Q, QUALITY FACTOR Vr = - 4 Vdc f = 50 MHz MIN pF MIN NOM MV1620 MV1622 6.1 7.4 6.8 8.2 MAX 7.5 9.0 MV1624 MV1626 9.0

V839

Contextual Info: K n o x S e m ic o n d u c t o r , In c ABRUPT VARACTOR DIODES MV830 - MV840 TYPE N UM BER C t DIODE C APACITA NCE Q, Q U A LIT Y FACTO R Vr = 4 Vdc f = 50 MHz MIN TYP Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX TR , TU N IN G RATIO f = 1 MHz C *4V / C-25V MIN

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . A unique manufacturing process allow s Knox Semiconductor to supply a range o f Low Voltage Diodes having Very Low Impedances at Low Current Levels. These remarkably sharp breaking diodes have the lowest values o f impedance ever achieved at the 250|iA level. These devices w ill find wide use in any application where low

Ksv1404

Contextual Info: K n o x S e m ic o n d u c t o r , I n c , SILICON HYPERABRUPT TUNING DIODES The KSV1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range o f junction capacitances, satisfying a large number o f broadband applications thru the VHF frequency