F 207 DIODE Search Results

MV840

Contextual Info: CHARACTERIZATION CURVES P.O. BOX 609 ? ROCKPORT, MAINE 04856 ? 207-236-6076 ? FAX 207-236-9558 -6- ABRUPT VARACTOR DIODES MV830 - MV840 PART NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz

Contextual Info: CHARACTERIZATION CURVES P.O. BOX 609 ? ROCKPORT, MAINE 04856 ? 207-236-6076 ? FAX 207-236-9558 -6- VHF HYPERABRUPT TUNING DIODES LV2001 A - LV2002(A) PART NUMBER LV2001 LV2001A LV2002 LV2002A CT CAPACITANCE (pF) f = 1 MHz VR= 4 Vdc VR= 8 Vdc VR=20 Vdc MIN MAX MIN MAX MIN MAX

Contextual Info: EPSON P F 207-05 SCI7660C/M DC-DC Converter •9 5 % Typical Power Efficiency •Voltage doubler •Voltage Conversion(Positive<-^Negative) • DESCRIPTION The SCI7660C/M CMOS DC-DC Converter features high operational performance with low power dissipation.

Contextual Info: s e MIKRD n SKliP 432 GB 120 - 207 CTV Absolute Maximum Ratings Symbol | Conditions11 Values Units 1200 900 400 - 40 . + 150 3000 5 400 800 4300 93 V V A -c V A A A kA2s IGBT & Inverse Diode V ces Vcc 91 lc v> Visol 4 > If If m If s m f t Diode) Operating DC link voltage

electromatic VOLTAGE LEVEL RELAY SM 125 220

Abstract: electromatic s system sv 115 230 electromatic RELAY SM 115 220 electromatic s system st 125 115 electromatic denmark sc 185 220 electromatic s system sb 165 electromatic s system SA 105 220 electromatic s system electromatic s system sm 105 220 ST 125 220 electromatic
Contextual Info: *I •»p»' • SYSTEM ELECTRONIC CONTROL- AND MONITORING MODULES û û f lc in o n if llk i S - SYSTEM SA B C 207 220 SUPPLY 2 2 0 V AC COMBI * 15s ■ RANGE SELECTOR 50 35^^6 5 riMfe rtELAY ON Delay on operate SA Interval timer & Delay on release SB Recycler & Interval timer

258-041

Abstract: RS 258-041 OEM24L 2N3706 AD636JH AD736JN digital power factor meter circuit diagram vr2, preset VR1 100K preset diode LMP
Contextual Info: Issued November 1993 016-207 Data Pack F Data Sheet Digital panel meter modules RS stock numbers 258-041, 313-479 backlit version These complete digital panel meters will measure and display up to ±199.9mV directly with an accuracy of ±1.0%. The small size and ultra-low power consumption, with their liquid crystal display make these

ha12159

Abstract: C114U HVR17 KR106 HVR hitachi ha1215 DYNAS
Contextual Info: ADE-207-060 HA12159 FM IF System for Use with the Dynas System Preliminary Rev. 0 Mar. 1992 HITACHI The HA12159 is an FM IF IC that incorporates a n ew te c h n iq u e th a t r a d ic a lly im p ro v e s th e sensitivity and selectivity o f FM receivers. With

Contextual Info: 2SK1414 207 7 U H U l t r a h i g h V o l t a g e S e r ie s V DSs = 1 5 0 0 V N Channel Power M OSFET £4230 F eatures • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C

TIS25

Abstract: 2N5045 TI TIS25 2N5047 jfet idss 10 ma vp -3 jfet idss 10 vp -6 3N208 T01A TIS27 TIS26
Contextual Info: s^ T e x a s In s t r u m e n t s Dual MOS, P-channel R A T IN G S TYPE B VG SSF C H A R A C T E R IS T IC S PTO T W IG S S F VGS V '< 3N 207 — 25 0 .6 -4 3N 208 -3 0 0 .6 —1 n A • pA V G S T H ) — 25 —3 —6 —3 —6 — 15 niin. m ax. m in.

diode fr 207

Abstract: 5SDD0135Z0400 5sdd0135z0200 0135Z0400 0135Z0200
Contextual Info: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 13 526

0135Z0400

Abstract: diode fr 207
Contextual Info: 5SDD 0135Z0400  5SDD 0135Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2 kHz Key Parameters = 400 V RRM

Knox Semiconductor

Abstract: zener K270 K300 K120 K150 K180 K210 K240 K270 K330
Contextual Info: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices

F 207 diode

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . SILICON HYPERABRUPT TUNING DIODES The KSV1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range o f junction capacitances, satisfying a large number o f broadband applications thru the VHF frequency

F 207 diode

Abstract: SV1412
Contextual Info: K n o x S e m ic o n d u c t o r , I n c SILICON HYPERABRUPT TUNING DIODES The KSV1400 Series of hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range o f junction capacitances, satisfying a large number of broadband applications thru the VHF frequency

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

201KD20

Abstract: Varistors 201kd20
Contextual Info: UL1449 SUPER LOW CLAMPING VOLTAGE HYPERFIX HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR DIODES AND MOV (METAL OXIDE VARISTORS) Description ¾ UL1449-231 HYPERFIX AND UL1449-201KD20 MOV Series of high current transient suppressors have been specially designed for use in

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in