F 2 D7 Search Results

Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 3 7 7 0 2 E 2 -X X X F P ,M 3 7 7 0 2 E 2 A X X X F P ,M 3 7 7 0 2 E 2 B X X X F P M 3 7 7 0 2 E 2 F S ,M 3 7 7 0 2 E 2 A F S ,M 3 7 7 0 2 E 2 B F S PROM VER SIO N of M 3 7 7 0 2 M 2 -X X X F P .M 3 7 7 0 2 M 2 A X X X F P .M 3 7 7 0 2 M 2 B X X X F P

M37702E2

Abstract: M37702E M37702e2afp M37702E2AXXXFP M37702E2BFP M37702E2-XXXFP MELPS M37702E2FP M37702E2BXXXFP M37702M2-XXXFP
Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 3 7 7 0 2 E 2 - X X X F P ,M 3 7 7 0 2 E 2 A X X X F P ,M 3 7 7 0 2 E 2 B X X X F P M 3 7 7 0 2 E 2 F S ,M 3 7 7 0 2 E 2 A F S ,M 3 7 7 0 2 E 2 B F S PROM VER SIO N of M 3 7 7 0 2 M 2 -X X X F P .M 3 7 7 0 2 M 2 A X X X F P .M 3 7 7 0 2 M 2 B X X X F P

Contextual Info: 20006—100-F 20006-080 * - F 20006-060 * - F 20006-050 * - F 2 0 0 0 6 -0 4 D * -F 2 0 0 0 6 -0 3 0 * —F 20006-020 * - f 2 0 0 0 6 -0 1 2 * -F PART No. 100 39. 2 40. 5 42. 9 45. 0 80 31. 2 32. 5 34. 9 37. 0 60 23. 2 24. 5 26. 9 29. 0 50 19. 2 20. 5 22. 9 25. 0

Contextual Info: 4 3 V1.1 CIRCUITS S P H d 7 5 0 -P 0 2 0 _ G f-0 2 0 5 -0 3 0 E S P H d 7 5 0 -P 0 3 0 _ G f-0 2 0 5 -0 3 0 E S P H d 7 5 0 -P 0 4 0 _ G f-0 2 0 5 -0 3 0 E S P H d 7 5 0 -P 0 5 0 _ G f-0 2 0 5 -0 3 0 5 S P H d 7 5 0 -P 0 6 0 _ G f-0 2 0 5 -0 3 0 E S PH d750-P 070 G f-0 2 0 5 -0 3 0 5

Contextual Info: r 2 1 3 4 M aterial: RoHS COMPLIANT * Insulator :PBT, UL 94V-0 * Contact: Brass Pin 1 > 41 i > * * f > + fl > + > 3 + > - f - f - f - f =F - f - f - f - f - f - f Pin 2 B B 5.08 □ 0.640 .025 .200 1i i i i i i I i i i I i i I i i i I o rn 2.540±0.05 .100±.002

Contextual Info: SEMiX 302GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 134   '+,-     !  % 0'(  '2+ $   2( , '( $ 6( $ 8'(  0( =   '+ , '6( $   2( , 09( $ 6( $ 06( $ 9( $ @( ? A 0+(

302GB128Ds

Abstract: 302Gb128 SEMiX 302GB128Ds diode 1334 302GB128D
Contextual Info: SEMiX 302GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 134   '+,-     !  % 0'(  '2+ $   2( , '( $ 6( $ 8'(  0( =   '+ , '6( $   2( , 09( $ 6( $ 06( $ 9( $ @( ? A 0+(

Contextual Info: »N M IT S U B IS H I M IC R O C O M P U TE R S 1 6 M 3 7 7 0 2 M 2 -X X X F P , M 3 7 7 0 2 M 2 A X X X F P M 3 7 7 0 2 M 2 B X X X F P ,M 3 7 7 0 2 S 1 F P M 3 7 7 0 2 S 1 A F P ,M 3 7 7 0 2 S 1 B F P S ING LE-CHIP 16-B IT CMOS MICROCOM PUTER DESCRIPTION

Contextual Info: MITSUBISHI MICROCOMPUTERS M 3 7 7 0 2 E 4 A X X X F P ,M 3 7 7 0 2 E 4 B X X X F P K ^ r S * * v « M 3 7 7 0 2 E 4 A F S 9M 377 02 E 4B F S unified into M 3 7 7 0 2 E 4 A X X X F P and M 3 7 7 0 2 E 4 A F S * PROM VERSION of M 37702M 4A XXXFP.M 37702M 4B XXXFP

lwm 1602 d

Abstract: PR101 N044 PAW k-5 J2JF cd7y FM11 RF 08 ks-49 msc sdf TP1Y
Contextual Info: M O S » » 0 S& M OS Integrated Circuit j u P D FM, MW, 1 7 1 2 G F - 0 5 2 # tt m P L L J I 3 ? J i§ & > ' h P ~ 7 / ¿ P D 1 7 0 1 2 G F - 0 5 2 ( i : £ t £ # & J f c < & P L L J i & & v > ^ i M i f ; £ 5 £ F M f MW , L W 5 ^ J i f c C M O S LSI

Contextual Info: BU2090 / BU2090F / BU2090FS / BU2092 / BU2092F / BU2092FV Standard ICs 12-bit, serial IN, parallel OUT driver BU2090 / BU2090F / BU2090FS / BU2092 / BU2092F / BU2092FV T h e B U 2 0 9 0 , B U 2 0 9 0 F , B U 2 0 9 0 F S , B U 2 0 9 2 , B U 2 0 9 2 F , a nd B U 2 0 9 2 F V a re 1 2 -b it s e ria l in p u t, p a ra lle l o u tp u t

56t6

Contextual Info: M ITSUBISHI MICROCOMPUTERS M 3 7 7 0 2 M 2 A X X X F P ,M 3 7 7 0 2 M 2 B X X X F P M 37702S 1A F P .M 37 702S 1B F P M37702S1FP are re s p e c tiv e ly unified Into M 37702M 2AXXXFP and M37702S1 a f p . _ S IN 6L E -C H IP 16-B IT CMOS MICROCOMPUTER DESCRIPTION

Contextual Info: b E M R fia a G G is n s b it h n it m Mi t s u b i s h i m i c r o c o m p u t e r s M 3 7 7 0 2 M 2 -X X X F P , M 3 7 7 0 2 M 2 A X X X F P M 3 7 7 0 2 M 2 B X X X F P .M 3 7 7 0 2 S 1 F P M 3 7 7 0 2 S 1 A F P .M 3 7 7 0 2 S 1 B F P SIN G LE-C H IP 16-BIT CM OS M ICRO COM PUTER

201GD128D

Contextual Info: SEMiX 201GD128Ds Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 145   '+,-     !  % 0'(  '( $   2( , 03( $ '( $ 8'(  0( =   '+ , 0+ $   2( , 0(+ $ '( $ 00( $ 9( $ 3( ? @ 0+(

Contextual Info: cP February 1994 Edition 2.0 f - 'f I l f ' T ' f ' I I r U l l I b U D ATASH EE T: M B 9 8 A 9 0 8 2 X /9 0 9 2 x / 9 1 0 2 x / 9 1 1 2 x -2 0 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 2 5 6 K / 5 1 2 K / 1 M / 2M-BYTE The Fujitsu MB98A9082x, 9092x, 9102x and 9112x are Static Random Access

fm25v20a-g

Abstract: FM25V20A-GTR
Contextual Info: FM25V20A 2-Mbit 256 K x 8 Serial (SPI) F-RAM 2-Mbit (256 K × 8) Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM25V20 2-Mbit 256 K x 8 Serial (SPI) F-RAM 2-Mbit (256 K × 8) Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM25V20A 2-Mbit 256 K x 8 Serial (SPI) F-RAM 2-Mbit (256 K × 8) Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

FYQ-3641

Abstract: FYQ-3641A FYQ 3641 FYQ-3641Bx 3641B FYQ-3041 fyq-3641ax FYQ3641A D9FG D-6201
Contextual Info: ý FOUR DIGIT DISPLAY NINGBO FORYARD OPTOELECTRONICS CO., LTD. PACKAGE DIMENSION INTERNAL CIRCUIT DIAGRAM FYQ-3041 Series 3.80 10.0 FYQ-3041Ax 24 13.20 7.60 '3" 6.80 DIG.3 DIG.2 D6 D1 D2 D3 D7 6 8 DIG.2 16 10 DIG.3 13 14 DIG.4 DIG.4 A D9 F G B E C D8 D D1 D2 D3 A B C D E F G A B C D E F G D6 D7 A B C D E F G D8 A B C D E F G D9

1.5K400

Abstract: SC7M6B 3.5K240B 1.5K250 SC3K200FD SC4K38FD i .5K33B 5k33b 5K290B SC1.5K70
Contextual Info: S IL IC O N S U R G E C L A M P E R S 1000W—4000W = ORIGIN ELECTRIC l . 2. ? • CO LTD SfiE b61 3 D7 M D • l0 _t2sec o 5 =? > 2. Z . ' f - y 1? - c7 JO N -O F F C = fc-S -y- — i? S c7 > e 5 4 S ffl0 TSS ORI J 1. F a st resp o n se tim e(1 0 -12sec).

Contextual Info: February 2008 HYB15T 1G 400C 2 F HYB15T 1G 800C 2 F HYB15T 1G 160C 2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Advance Internet Data Sheet HYB15T1G[40/80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: FM25C160B 16-Kbit 2 K x 8 Serial (SPI) Automotive F-RAM 16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

Contextual Info: PRELIMINARY FM25V20 2-Mbit 256 K x 8 Serial (SPI) F-RAM 2-Mbit (256 K × 8) Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

75GAL123D

Contextual Info: SKM 75GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*9 :5 .=59+.& > .  + + 4* 1300 Inverse diode SEMITRANSTM 2 IGBT Modules & &(9 . 2 13 70 4* . 2 13 70 4* 2 /  &( 2 /0 B  @B .< 2 /30 4* 83 30 /30 /10 + + 330 +