F 1900 Search Results

Contextual Info: RF2375 Preliminary
       
      • LNA for DCS 1800/1900 Handsets • Driver Stage for Power Amplifiers • IF or RF Buffer Amplifiers • Oscillator Loop Amplifiers
    4 GENERAL PURPOSE AMPLIFIERS 0.365 TEXT*

NFC41

Contextual Info: RF2445
       
      • LNA for DCS 1800/1900 Handsets • Driver Stage for Power Amplifiers • IF or RF Buffer Amplifiers • Oscillator Loop Amplifiers
    The RF2445 is a general purpose, low-cost, high-performance, low-noise amplifier designed for operation from a

NFC41

Contextual Info: RF2445 Preliminary
       
      • LNA for DCS 1800/1900 Handsets • Driver Stage for Power Amplifiers • IF or RF Buffer Amplifiers • Oscillator Loop Amplifiers
    The RF2445 is a general purpose, low-cost, high performance, low noise amplifier designed for operation from a

NFC41

Contextual Info: RF2445
       
      • LNA for DCS 1800/1900 Handsets • Driver Stage for Power Amplifiers • IF or RF Buffer Amplifiers • Oscillator Loop Amplifiers
    The RF2445 is a general purpose, low-cost, high performance, low noise amplifier designed for operation from a

Contextual Info: Contents Screwdrivers Screwdrivers Screwdrivers Introduction – Screwdrivers F.2 Introduction – Electric screwdrivers F.4 Rechargeable torque screwdriver F.5 Bits F.6 Introduction – Torque screwdrivers F.8 Uninsulated torque screwdriver F.9 VDE-insulated torque screwdriver

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1,5dB MAX. @ f=20GHz NF=1.8dB (MAX.) @ f=24GHz NF=2.3dB (MAX.) @ f=28GHz • High Associated Gain: Gas=15.0dB (MIN.) @ f=20GHz Gas=12.0dB (MIN.) @ f=24GHz Gas=9.0dB (MIN.) @f=28GHz

ic isl 887

Abstract: 2SK720A 2SK720 kst-f
Contextual Info: M O S Field E f fe c t P o w e r T r a n s is t o r N - ^ - ^ U '< r7 — MOS F E T x i f f l 2SK720AÜ, ï&î x m &<, F — MOS F E T t'^ > * fM T O : mm x -f - y f> ?"W‘ït v m t i r a n , ¡¡sjgmx^ D C - D C n V A ' - j ' l z f ò S T '- t o «$ @

2SK821

Abstract: AJE TI TEA-509 F111 100-1000W EIR94
Contextual Info: r — z S 7 • 5 / — h M O S ï ï 2 ,B # & j m ' < r7 - M O S Field E ffe c t P o w e r T ra n s is to r 2SK821 MOS F E T — i i f f 2SK821 i, ffifitM S < , F X -Î7 f > l FETT"^> 7 'fë 14 * fi l n t iJ ' , B 0 i X - i v f > W fê 'A \ m . (-^ -Ü

TRANSISTOR PNP B1443

Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
Contextual Info: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000

2SK820

Abstract: SF121 transistor DK qj 2sk820ii upcll K71E
Contextual Info: M O S F ie ld E ffe c t P o w e r T ra n s is to r 2SK820 N W ' ^ < 7 -M O S FET I i f f l 2S K 820Ü , N f i - i - ; i / X > / N > ' X y > l ' f P ' , 7 - M 0 S F E T T t < , v j- y r m iM , if# x 4 -y f - > g , ïtç ig - x m m ^ - f i • mm i HUS

TLOH16T

Abstract: TLOH16TP TLRMH16T TLRMH16TP TLSH16T TLSH16TP TLYH16T TLYH16TP
Contextual Info: TL RMH,SH,OH,YH 16TP(F) TOSHIBA InGaAℓP LED TLRMH16TP(F),TLSH16TP(F), TLOH16TP(F),TLYH16TP(F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type • Transparent lens

TLOH16T

Abstract: TLOH16TP TLRMH16T TLRMH16TP TLSH16T TLSH16TP TLYH16T TLYH16TP TLOH16TPF
Contextual Info: TL RMH,SH,OH,YH 16TP(F) TOSHIBA InGaAℓP LED TLRMH16TP(F),TLSH16TP(F), TLOH16TP(F),TLYH16TP(F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type • Transparent lens

MX29GA129E

Abstract: MX29GA257E MX29GA MX29GA257 Q0-Q15 SA10
Contextual Info: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 1.0, NOV. 27, 2009 1 MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

LLP1005-FH3N3C

Abstract: Wmm05 116 1LJJ QFII IAM-92516 LL1005-FHL56NJ LLP1005-FH10NC LLP1005-FH1N0C MCH155A180JK
Contextual Info: IA M - 9 2 5 1 6 fa 1 .9 G H z T S ia f f iS + f i& K J f l \«m m 5063 Agilent Technologies itm 400MHz SU 3GHz fòjfrfB 'IfÉ fà a, n r f ^ s ^ i ± ^ f n T » &mmmm%sofm, t m ^ 3 M E E « :S J fii2 o o » [j# . W H S M IA « U t£ W jB ^ 5 £ J j| M M ffiB M M fiH B fr ffr A *

21134 transistor

Abstract: transistor z 0607
Contextual Info: T O SH IB A 2SC5497 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r Q7 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : N F = 1.4dB f=2GHz • High Gain : Ga = 14dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: RF2161 Preliminary
   
     
      • 3V 1850-1910 CDMA-2000 Handsets • Commercial and Consumer Systems • 3V 1920-1980 WCDMA Handsets • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS • Spread Spectrum Systems

Contextual Info: fiâïWS N E C N E C ELECTRONICS 98D INC ELECTRONICS INC ~Tfl 19005 D 7" — 3 DËf| t.Ma?SES i G D n D D S 4 — * *— M O S F I E L D E F F E C T T R A X S I S T C r . ELECTRON DEVICE 2 F A S T N - C H A N X E L S K 8 2 S S W I T C H I N G S I L I C O N '

Contextual Info: TC58F10OOP/F/J-15 TC58F1000P/F/J-20 T C 5 8 F 1 0 0 0 P /F /J 131,072W ORD X 8BIT C M O S FLASH E2 P R O M D ESC RIP TIO N The TC58F1000P / F / J is a 1,048,576 bits, Flash Electrically Erasable and Programmable Read Only Memory FE2PROM organized as 131,072 words by 8 bits. The TC58F1000P / F / J is fabricated

k3525

Abstract: sdwl1608c SDWL2520c SDWL2012 SDWL1608C18n SDWL2012CR33 SDWL1005C12N s47g SDWL1005C10N SDWL2520C-G
Contextual Info: Chequers Electronic China Limited Wire Wound Chip Ceramic Inductor (SDWL-C Series) ● Dimension SDWL-C S/G SDWL-C B C B C B F F A A F F D E E Series A (max.) B (max.) C (max.) D (max.) E (max.) F (max) SDWL1005C-S 1.19 0.64 0.66 0.20 0.523 0.215 SDWL1005C-G

MT3S04T

Contextual Info: T O SH IB A TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3SQ4T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : N F = 1.2 dB at f = 1 GHz • High G ain : G ain = 12.5 dB (at f = 1 GHz) U nit in mm MAXIMUM RATINGS (Ta = 25°C)

MKP385

Abstract: MKP 385
Contextual Info: Not Recommended for New Design, Use New MKP385 MKP 385 Vishay BCcomponents AC and Pulse Metallized Polypropylene Film Capacitors MKP Radial Potted Type l W l FEATURES W h h h' F' 1 F lt P Ø dt H Ø dt 10 Dimensions in mm (1) |F - F’| < 0.3 mm F = 7.5 + 0.6/- 0.1 mm

2SC5497

Abstract: NF 841
Contextual Info: TOSHIBA 2SC5497 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5497 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4dB f=2GHz • High Gain : Ga = 14dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: RF2174 Preliminary
   
      • Commercial and Consumer Systems • 3V DCS1900 PCS Cellular Handsets • Portable Battery Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible
    2
GaAs HBT

Contextual Info: 6427525 N E C ELECTRONICS tiME75E!5 O G l f i W INC 9ÔD 18989 D -f- 3 ? W 3 1 |~ -••\.vs't.¿V-.-s:>•■*. V i r - v ,.-'•; - ? % § < , & V-ïÿ' ELECTRON DEVICE M O S " F I E L D ' 'E F F E~C T " T R Ä N S I S T 0 ?.~ /' • 2 S K F A S T