F 13000 Search Results

Contextual Info: TLRMH20TP F ,TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) TOSHIBA InGaAℓP LED TLRMH20TP(F),TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type

TLSH20TP

Abstract: TLYH20T TLYH20TP TLOH20T TLOH20TP TLRMH20T TLRMH20TP TLSH20T TLOH20TPF
Contextual Info: TLRMH20TP F ,TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) TOSHIBA InGaAℓP LED TLRMH20TP(F),TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type

TLOH20T

Abstract: TLOH20TP TLRMH20T TLRMH20TP TLSH20T TLSH20TP TLYH20T TLYH20TP TLOH20TPF
Contextual Info: TLRMH20TP F ,TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) TOSHIBA InGaAℓP LED TLRMH20TP(F),TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5mm package • InGaAℓP technology • All plastic mold type

TLYH20TP

Abstract: TLSH20TP TLOH20T TLOH20TP TLRMH20T TLRMH20TP TLSH20T TLYH20T TLYH20TPF TLRMH20TPF
Contextual Info: TLRMH20TP F ,TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) TOSHIBA InGaAℓP LED TLRMH20TP(F),TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type

TLRMH20T

Abstract: TLRMH20TP TLSH20T TLSH20TP TLYH20T TLYH20TP TLOH20T TLOH20TP
Contextual Info: TLRMH20TP F ,TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) TOSHIBA InGaAℓP LED TLRMH20TP(F),TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) Panel Circuit Indicator Unit: mm • 5mm package • InGaAℓP technology • All plastic mold type • Transparent lens • Lineup: 3colors (red, orange, yellow)

Contextual Info: TOSHIBA InGaAℓP LED TLRH20TP F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type • Transparent lens

Contextual Info: TOSHIBA InGaAℓP LED TLxH20TP F) Series Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type • Transparent lens

TLOH20T

Abstract: TLOH20TP TLRMH20T TLRMH20TP TLSH20T TLSH20TP TLYH20T TLYH20TP TLYH20TPF
Contextual Info: TLRMH20TP F ,TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) 東芝LEDランプ TLRMH20TP(F),TLSH20TP(F),TLOH20TP(F),TLYH20TP(F) ○ 表示用光源 単位: mm • 5mm package • 超高輝度四元素発光材料 (InGaAℓP) を使用 • 無色透明レンズ • 発光色: 赤 2 種類､橙､黄をラインアップ

TRANSISTOR PNP B1443

Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
Contextual Info: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000

MX29GA129E

Abstract: MX29GA257E MX29GA MX29GA257 Q0-Q15 SA10
Contextual Info: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 1.0, NOV. 27, 2009 1 MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

SA206

Abstract: MX29GA129E
Contextual Info: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 0.01, AUG. 10, 2009 1 ADVANCED INFORMATION MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

Contextual Info: TC58F10OOP/F/J-15 TC58F1000P/F/J-20 T C 5 8 F 1 0 0 0 P /F /J 131,072W ORD X 8BIT C M O S FLASH E2 P R O M D ESC RIP TIO N The TC58F1000P / F / J is a 1,048,576 bits, Flash Electrically Erasable and Programmable Read Only Memory FE2PROM organized as 131,072 words by 8 bits. The TC58F1000P / F / J is fabricated

F16 - 100 HIP

Abstract: 58F1001
Contextual Info: TENTATIVE DATA TC58F1001P/F 131,072WORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he T C 5 8 F 1 0 0 1 P /F is a 1,048,576 bits, F la sh E lectrically E ra sa b le a n d P ro g ram m ab le R ead O nly M em ory FE 2PROM organized as 131,072 w ords by 8 bits. T he T C 5 8 F 1 0 0 1 P /F is fab ricated by

150a gto

Abstract: b958 100P-160 tp102
Contextual Info: SIE D • □□□3C 155 10Ö * S E K G Ö13bb71 s e MIKRDn SEMIKRON INC Vrsm Vrrm V Ifa v Fast Recovery Rectifier Diodes sin. 180; Tease ~ 85 °C 770 A " r - 0 3 - z ,3 SKN 650 F 800 SKN 650 F 08 1200 SKN 650 F 12 1400 SKN 650 F 14 1600 SKN 650 F 16 1800

0,22 j 160 tgl 55163

Abstract: VEB M ik ro e le k tro n ik Scans-048 TGL-200 asterm DSAGER0002 DSAGER00027 TGL 200
Contextual Info: ondensatoren T s c CD c~ t CD c T O Q _ CD Program m übersicht K a p a z itä ts b e re ic h B a u fo rm Typ/TG L 3300 1000 330 1000 38 159 pF - 0,1 //F p F - 0 ,1 f jf pF - 0,022 ,F p F - 0 , 0 2 2 ,F Spannungsre ih e T o le ra n z P rü fkla sse A n w e n d u n g s k la s s e

Contextual Info: RADI A L L Microwave components 26.5GHz TECHNICAL DATA SHEET SMA FAILSAFE R570 F 13000 Page 1/ 2 S.P.D.T. SWITCH OPTIONS : R F CHARACTERISTICS | FREQUENCY RANGE IMPEDANCE 8 -12.4 12.4- 18 18 -26.5 V.S.W.R <= 1.20 1.30 1.40 1.50 1.70 0.20 dB 0.30 dB 0.40 dB

P200H

Abstract: PH 1n 40 50 20800-3 ir 150h M300K F40H P56H hf80 1n 48 ph
Contextual Info: DIODES DE REDRESSEMENT HAUTE TENSION high voltage rectifier diodes V RWM vF V RRM TYPES 100 JUA min. V VR (V) 200 mA ME ME ME ME ME / tamb = 25°C 20 F 40 F 60 F 80 F 100 F 250 mA 2 0 0 /400 mA EV EV EW EW mA D 40 H D 60 H D 80 H D 150 H D 200 H L D 250 H L

vk200 choke

Abstract: MVM010W MVM010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T V H F/U H F Am plifiers N -Chan nel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Forward Gate Current •g f 10 mAdc Total Device Dissipation @ TA = 25°C

super bonder 325

Abstract: ls40f
Contextual Info: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz

TC58257A

Abstract: TC58F1001P 0A000-0AFFF 18XXX EPROM sop 40
Contextual Info: TOSHIBA MOS INTEGRATED CIRCUIT IN T E G R A T E D C IR C U IT T O S H IB A TC 58F1001P/F- 15 , T C 58F 1001P /F -20 T E C H N |CAL D A T A SILICON STACKED GATE MOS TENTATIVE DATA TC58F1001P/F 131.072W ORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he TC 58F1001P / F is a 1,048,576 bits, F lash E lectrically Erasable and Programmable Read

rg6 bnc connector

Contextual Info: F Connectors AVA ELECTRONICS CORP. F Connectors for PCB Mount Applications General description The AVA line of F Connectors provides an inexpensive coaxial interconnection which is suitable for use in a variety of applications, such as: CATV, MATV, and home satellite

Contextual Info: SHARP SPEC No. |_ ISSUE: May 15 1996 T o ; S P E Product Type C 16M L H 2 Mo d e l I F No. I C A F l a s h 8 F T I O F i l e N S M-emory 1 6 S U R - 1 L H F 1 6 S 1 2 _ ^ T h is s p e c ific a tio n s contains 44 pages including the cover and appendix.

ro4003

Abstract: ka band lna
Contextual Info: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB (Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm (Typ.) @f=26GHz ・Ball Grid Array SMT Package (VZ)

YC 27000

Abstract: yc 428 transistor ED-4701 RO4003 FMM5709YC FMM5709
Contextual Info: ES/FMM5709YC K-Band Low-Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=30GHz ・Broad Band : 17.5~30GHz ・High Output Power : P1dB = 12｡5dBm ( Typ. ) @f=30GHz ・Laminate SMT Package(YC-pkg)