EYAE Search Results

IRL2910

Contextual Info: PD - 91375B IRL2910 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.026Ω

IRL540N

Contextual Info: PD - 91495A IRL540N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.044Ω G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier

IRL2910 equivalent

Abstract: IRL2910 LSE B4 transformer
Contextual Info: PD - 91375B IRL2910 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.026Ω

LC-X1224APG

Abstract: LC-X1224AP tca 4040 LC-X1224PG EUROBAT EM 3030 G198049 ah22ah 4035h em 223
Contextual Info: Individual Data Sheets LC-X1224PG/APG For standby power supplies. Expected trickle design life: 10 – 12 years at 20 °C according to Eurobat. VdS G198049 Dimensions mm M5 Terminal M5 9.8 9.8 16.5 type M5(option): M5 M5 9.8 16 M5 16.5 16.5 16 16 LC-X1224PG:

IRL520N

Abstract: IRL520
Contextual Info: PD - 91494A IRL520N HEXFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET D VDSS = 100V RDS on = 0.18Ω G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: LOGIC DEVICES INC 2bE D • SSbSlOS DGDlQflQ T ■ 'n 8K X 8 CMOS Cache-Tag Static RAM FEATURES Q Data Retention at 2 V for Battery Backup Operation □ Plug Compatible with IDT 7174, MK48H74 □ Package Styles Available:

Contextual Info: Isolation & Auto Transformers_ SPLIT BOBBIN ISOLATION TRANSFORMERS 3 VA to 1.25 KVA 5 0 /6 0 Hz 230V/230V or 115V/115V or 230V/115V or 115V/230V 1.5 KV RMS Hipot - UL Class B (130°C) (Mtg. Style: C) (STD. SIZE l-VIII) ISO LA TIO N T R A N S FO R M E R

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

IRL530N

Contextual Info: PD - 91348B IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

IRL520N

Abstract: IR 60A, 100V Mosfet
Contextual Info: PD - 91494A IRL520N HEXFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET D VDSS = 100V RDS on = 0.18Ω G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier

IRF530N

Abstract: MOSFET IRF530n
Contextual Info: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

ECG transistor replacement guide book free

Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

IRF530N

Contextual Info: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

IRL540N

Contextual Info: PD - 91495A IRL540N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.044Ω G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier