EVERSPIN TECHNOLOGIES Search Results

MR256A08B

Abstract: MR256A08BCYS35 32KX8
Contextual Info: MR256A08B 32Kx8 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

MR1A16ACMA35

Abstract: mram 128Kx16 MR1A16ACYS35 MR1A16AVYS35 MR1A16AYS35
Contextual Info: MR1A16A 128Kx16 MRAM Memory Features •Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

MR2A16A

Abstract: MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil
Contextual Info: MR2A16A 256Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

MR2A08A

Contextual Info: MR2A08AM FEATURES 512K x 8 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant TSOPII package • AEC-Q100 Grade 1 Automotive Temperature -40 to +125 °C

MR0A08B

Abstract: MR0A08BC MR0A08BCYS35R
Contextual Info: MR0A08B FEATURES 128K x 8 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

MR256D08B

Contextual Info: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

MR2A16AMYS35

Abstract: MR2A16A MR2A16AMA35
Contextual Info: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

Contextual Info: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

MR20H40

Abstract: mr20h40cdf MR25H40
Contextual Info: MR20H40 / MR25H40 MR20H40 - 50MHz/20ns tSCK Commercial and Industrial Temp Range 4Mb SPI Interface MRAM MR25H40 - 40MHz/25ns tSCK (Industrial and AEC-Q100 Grade 1 Temp Range) 4Mb SPI Interface MRAM For more information on product options, see “Table 16 – Ordering Part Numbers” on page 24.

Contextual Info: MR0A08B FEATURES • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures

Contextual Info: MR20H40 / MR25H40 MR20H40 - 50MHz/20ns tSCK Industrial Temp Range 4Mb SPI Interface MRAM MR25H40 - 40MHz/25ns tSCK (Industrial, Extended and AEC-Q100 Grade 1 Temp Range) 4Mb SPI Interface MRAM For more information on product options, see “Table 16 – Ordering Part Numbers” on page 24.

Contextual Info: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

MR25H10CDC

Abstract: mr25h10mdc MR25H10 AEC-Q100 dfn tray 5 mm x 6 mm
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

MR25H10C

Abstract: MR25H10MDF
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

footprint jedec Mo-119

Abstract: MR256A08BCMA35R
Contextual Info: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures

Contextual Info: MR0A08B FEATURES • • • • • • • • • 128K x 8 MRAM 3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Native non-volatility Unlimited read & write endurance Data always non-volatile for >20 years at temperature Commercial and industrial temperatures

Contextual Info: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

MR2A08AMYS35

Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
Contextual Info: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

MR0A08BC

Contextual Info: MR0A08B FEATURES 128K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures

Everspin Technologies

Abstract: MR25H256 22Status
Contextual Info: MR25H256 FEATURES 256Kb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

Contextual Info: MR256A08B 32K x 8 MRAM FEATURES • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures

MR0D08BMA45

Contextual Info: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

Contextual Info: MR20H40 / MR25H40 MR20H40 - 50MHz/20ns tSCK Commercial and Industrial Temp Range 4Mb SPI Interface MRAM MR25H40 - 40MHz/25ns tSCK (Industrial and AEC-Q100 Grade 1 Temp Range) 4Mb SPI Interface MRAM For more information on product options, see “Table 16 – Ordering Part Numbers” on page 24.