EUPEC DD 350 Search Results

DD 127 D

Abstract: 3403S EUPEC DD 350
Contextual Info: EUPEC blE D m 34032^7 DDOIST? 645 « U P E C DD 121 S, DD 122 S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tvj — 4 0 ° C . tvj max DD 121 S:

EUPEC Thyristor

Abstract: AD180S diode wj MS4800
Contextual Info: LIE J> EUPEC m aHDBS1!? DDÜiaS? 421 BiUPEC AD 180 S Elektrische Eigenschaften Electrical properties H ochstzulässige Werte M axim um rated values Periodische VorwärtsS pitzensperrspannung repetitive peak forward off-state voltage Vorwärts-Stoßspitzenspannung

Contextual Info: EUPEC blE » • 3MG32R7 0DQ12t.l bTT ■ U P E C DD 106 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tvj -40 C . tvj max V rrm Stoßspitzenspannung

dd 55 n 14 powerblock

Abstract: dd 151 n 1400 powerblock
Contextual Info: EUPEC blE D 34032*17 GGDlSbH BTT • U P E C DD 151 N Elektrische Eigenschaften Electrical properties Durchlaßstrom-Grenzeffektivwert RMS forward current Dauergrenzstrom average forward current Stoßstrom-Grenzwert surge current + 100 V I frm sm 240 A I favm

EUPEC powerblock

Abstract: 082c
Contextual Info: bl E D EUPEC 34032T7 000127G bTS « U P E C DD 175 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 2800,3000 3200 3400 V V V 100 V I frmsm 350 A I favm 175 223 A A Periodische Spitzensperrspannung repetitive peak reverse

No584

Abstract: 1bw transistor
Contextual Info: F 400 R 06 KL EUPEC 52E • 34032^7 D DD DBbD Thermische Eigenschaften Transistor Transistor D Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 600 V 400 A !c flb b ■U PEC Thermal properties Rthjc DC, pro Baustein / per module

GTO hvdc thyristor

Abstract: welding rectifier circuit board thyristor ltt 1590A single phase fully controlled rectifier scr control circuit for welding disc thyristor IGCT high single phase bridge rectifier pin configuration single phase bridge fully controlled rectifier
Contextual Info: Product Information Main Features Thyristors & Diodes • ■ ■ ■ BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up to several giga watts. Besides the standard phase thyristors and rectifier diodes, our

EUPEC TT 60 f

Contextual Info: EUPEC blE D • 34032^7 □DQIB'JS ‘iSS BHIJPEC T T 111 F, T D 111 F, D T111 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 40°C. t vj max Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

EUPEC T 36 n

Abstract: TT308 EUPEC T 218 N 12
Contextual Info: EUPEC T 236 N S5E D • 34035T7 000073b OSI B U P E C Typenreihe/Type range_ T236N _ 2000_ 2200_ 2400_ 2600* Elektrische Eigenschaften Electrical properties Hochstzulässige Werte U d r m . Vrrm Periodische Vorwärts- und

EUPEC tt 161 n 16

Contextual Info: EUPEC blE D • 3HD32T7 00□ 117T T4T « U P E C TT 101 F, TD 101 F, DT 101 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte_Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: EUPEC SEE J> T 270 N 34035^7 0000737 T^fl • U P E C ■7^25vV 9 lypenreihe/lÿpe range T270N 2000 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VdHM. Vrrm Periodische Vorwärts- und RQckwärts-Spitzensperrspannung Effektiver DurchlaBstrom

Contextual Info: EUPEC blE ]> • BMGaS'ì? ODOllbS 354 « U P E C TT 71 F, TD 71 F, DT 71 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: EUPEC S2E » • BMGBET? 00G07QL, 314 « U P E C T160N 7 ^ 5 ' / ? Typenrelhe/Type range T 160 N Elektrische Eigenschaften Electrical properties Vdrm. Vrrm Periodische Vorwärts- und Rückwärts-S pitzensperrspannung Effektiver Ourchlaßstrom Itrmsm Dauergrenzstrom

SIDC03D120H

Abstract: 4372H
Contextual Info: Preliminary SIDC03D120H Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D120H 1200V ICn 4A A This chip is used for:

DT350

Abstract: DIODE 3A 600V transistor 350A 4314M SIDC02D60F6 EUPEC DD 41
Contextual Info: Preliminary SIDC02D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC02D60F6 600V IF C Applications:

SIDC04D60F

Abstract: ir 339a
Contextual Info: Preliminary SIDC04D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC04D60F 600V ICn 9A A This chip is used for:

SMPS 250A

Abstract: SIDC03D120F
Contextual Info: Preliminary SIDC03D120F Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D120F 1200V ICn 2A A This chip is used for:

4314M

Abstract: SIDC02D60F6
Contextual Info: Preliminary SIDC02D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC02D60F6 600V IF C Applications:

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

EUPEC tt 170 n 14

Abstract: EUPEC tt 170 n 12 eupec dd 76 n 12 l EUPEC DD 171 N EUPEC tt 250 n eupec TT EUPEC tt 170 N 16 EUPEC tt 25 N 12
Contextual Info: blE EUPEC D O G IH ^ 3 H 0 3 E €i 7 D =153 IUPEC T T 111 F, T D 111 F, DT 111 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 400 600 800 V V V V rsm = V RRm + 100 V It r m s m 200 111 128 30 0 0 2600 45000

SIDC04D60F6

Contextual Info: Preliminary SIDC04D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC04D60F6 600V IF C Applications:

SIDC04D60F6

Abstract: DSA0026392
Contextual Info: Preliminary SIDC04D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC04D60F6 600V IF C Applications:

Contextual Info: Preliminary SIDC04D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC04D60F6 VR 600V IF A This chip is used for:

4314M

Abstract: SIDC02D60F6
Contextual Info: Preliminary SIDC02D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC02D60F6 600V IF C Applications: