XP161A11A1PR
Abstract: XP161A11A1PR-G marking 4a sot-89
Contextual Info: XP161A11A1PR-G ETR1122_003 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
|
Original
|
XP161A11A1PR-G
ETR1122
XP161A11A1PR-G
OT-89
OT-89
XP161A11A1PR
marking 4a sot-89
|
PDF
|
XP161A11A1PR
Abstract: n-channel SOT-89
Contextual Info: XP161A11A1PR ETR1122_001 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
|
Original
|
XP161A11A1PR
ETR1122
XP161A11A1PR
OT-89
n-channel SOT-89
|
PDF
|
N-channel Power MOSFET with low on-state resistance
Abstract: XP161A11A1PR
Contextual Info: XP161A11A1PR-G ETR1122_002 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
|
Original
|
XP161A11A1PR-G
ETR1122
XP161A11A1PR-G
OT-89
N-channel Power MOSFET with low on-state resistance
XP161A11A1PR
|
PDF
|
XP161A11A1PR
Abstract: ultra low igss
Contextual Info: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.105Ω MAX. ◆Gate Protect Diode Built-in ◆Ultra High-Speed Switching ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP161A11A1PR is an N-channel Power MOSFET with low
|
Original
|
OT-89
XP161A11A1PR
XP161A11A1PR
ultra low igss
|
PDF
|