ETA TRW Search Results

Contextual Info: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The S am sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The KMM364V120C - 6 K M M 364V120C - 7

Contextual Info: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5

MOTOROLA 13003

Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER

KMM372V213A

Contextual Info: DRAM MODULE KMM372V213AJ/AT KMM372V213AJ/AT Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KMM372V213A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The Sam sung KM M 372V213A consists of nine CMOS

EZ 720

Contextual Info: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Sam sung KM M 374F20 1 3B is a 2M bit x 72 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS

ascom

Abstract: kearfott SUPERMAC Pratt Whitney alps labeling Raytheon MCT daikin Dolphin honeywell Ericsson Marconi carl zeiss
Contextual Info: Systems in Silicon 3_bU\Yc9^S 8@<_WYS1^Q\ijUbCe``_bd 3_bU\Yc9^S !"& '8YTTU^SbUU[GQi3UbbYd_c31 ' # %&")"&&'"'cQ\Uc0S_bU\YcS_] gggS_bU\YcS_] 1 Company Overview • Privately held • Founded 1991

KMM372V213

Abstract: KMM372V213BS
Contextual Info: KMM372V213BK/BS DRAM MODULE KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Part Identification - KMM372V213BK 2048 cycles/32ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) The Sam sung KMM 372V213B is a 2M bit x 72

Contextual Info: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V4Q0BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 D ynam ic RAM high density m em ory module. The

Ez102

Abstract: 4103AJ
Contextual Info: KMM372V412AK/AS DRAM MODULE KMM372V412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KMM372V412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 6

TDC11012

Abstract: TRW 1020 TDC1012 THC1070 THC1070E1C THC4940 8609-264-6114-7550E1 Coaxial RJ 57 TRW RESISTOR
Contextual Info: THC1070 f # 7 ìv Complete High-Speed A/D Converter 10-Bit, 25 Msps The TRW THC1070 is a complete analog-to-digital converter that combines all the circuitry required to convert high-speed analog signals into 10-bit digital data at rates up to 25 Msps Megasamples per second . The THC1070

Contextual Info: KMM364C400BK/BS KMM364C41 OB K/BS DRAM MODULE KMM364C400BK/BS / KMM364C41OBK/BS Fast Page Mode 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM364C40 1 0B is a 4M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V400BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynam ic RAM high density m em ory module. The

Samsung Capacitor sse

Contextual Info: DRAM MODULE KMM372V120CJ/CT KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372V120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The S am su ng

KM44V16104AK

Abstract: 0023D14 REF-601
Contextual Info: KMM374F1680AK KMM374F1600AK DRAM MODULE KMM374F1680AK & KMM374F1600AK EDO Mode w ith ou t buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM374F168 0 0AK is a 16M bit x 72 >Part Identification

MSM66201

Abstract: MSM66207 MSM66P201 MSM66P207 QFP64 SDIP64 m 66207
Contextual Info: J2E1027-27-Y3 ¡ 電子デバイス 作成：1998年 1月 前回作成：1996年11月 MSM66201/66P201/66207/66P207 l MSM66201/66P201/66207/66P207 10ビットA/Dコンバータ内蔵16ビットマイクロコントローラ n 概要 MSM66201/66207は沖オリジナルのCPUコアnX-8/200を使用した、高性能16ビットマイクロコン

tms 3848 nc

Abstract: MSM66101 MSM66G101VS QFP64 SDIP64 12k8
Contextual Info: J2E1026-27-Y4 ¡ 電子デバイス 作成：1998年 1月 MSM66101 l 前回作成：1996年11月 MSM66101 10ビットA/Dコンバータ内蔵16ビットマイクロコントローラ n 概要 MSM66101は沖オリジナルのCPUコアnX-8/100を使用した、高性能16ビットマイクロコントロー

TMS 3848

Abstract: tms 3848 nc MSM66101 MSM66G101VS QFP64 SDIP64 0026I 004AI rw 816 ai-259
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

66207

Abstract: MSM66207 P2211 MSM66201 MSM66P201 MSM66P207 QFP64 SDIP64 m 66207 ai-259
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

2u11

Contextual Info: O K I Semiconductor MSM66101 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66101 is a high performance microcontroller that employs OKI original n X -8/100 CPU core. This chip includes a 16-bit CPU, ROM, RAM, I /O ports, multifunction 16-bit timers, 10-bit A /

Contextual Info: QL8x12 pASIC 1 FAMILY Very-High-Speed IK 3K Gate CMOS FPGA pASIC HIGHLIGHTS Very High Speed - ViaLink metal-to-metal programmable-via antifuse technology, allows counter speeds over 100 MHz, and logic cell delays of under 4 ns. High Usable Density - An 8-by-12 array of 96 logic cells provides

MSM66101

Abstract: MSM66G101VS QFJ68-P-S950-1 QFP64-P-1414-0 SDIP64-P-750-1 QFP5-28
Contextual Info: E2E1026-27-Y4 ¡ Semiconductor MSM66101 ¡ Semiconductor This version: MSM66101 Jan. 1998 Previous version: Nov. 1996 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66101 is a high performance microcontroller that employs OKI original nX-8/100 CPU

ic 81256 ram

Abstract: mb81256 3GJK 66010-2
Contextual Info: February 1990 Edition 2.0 FUJITSU DATASHEET M B 8 1 2 5 6 -8 0 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

TDC1012

Abstract: TDC1048 MARKING lsi logic 10-TURN FHC1068 THC1068 THC1068E1C THC1068S7V1 irf 5110 B24DA
Contextual Info: FHC1068 7 #7 r V Complete High-Speed A/D Converter 8-Bit, 25Msps Designed to be user-friendly, th e T H C 1068 is a com plete flash ana lo g -to -d ig ita l conve rter th a t com bines all circuitry required to convert high-speed analog signals into 8 -b it