ESIS POWER Search Results

Contextual Info: GENESIS 5000 SEM I-CUSTO M IC Intended or the integration of complex circuits, the G EN ESIS™ 5000 linear array has over 300 transistors and includes 20 macrocell “tiles” organized in a 4 x 5 matrix. This approach allows circuit functions to be replicated simply

RM-082

Abstract: L450M RM-08
Contextual Info: vm IROOxx ROMBOjr Data Sheet Low Power, High Performance CMOS Gate Array and ROM Combo Features • Input levels selectable, CMOS, TTL, ECL, hyster­ esis, Analog Comparator ■ 64K ROM: 8192 words x 8 bits ■ 2880 available gates, 2000 usable gates ■ 3V or 5V operating supply

L23402

Contextual Info: L2340 Digital Synthesizer □ D ig ital W av efo rm S y n th esis a t 50 M H z The L2340 is a digital synthesizer th at perform s w aveform synthesis, m odulation, an d dem odulation. □ 24-Bit Polar Phase A ngle Accuracy □ User-selectableWaveformSynthesis,

LLM338P

Abstract: sy 171
Contextual Info: A LAM BDA LINEAR REGULATORS LLM 338P 5 A M P PO SITIVE ADJUSTABLE VOLTAGE REG ULATO R ABSOLUTE M A X IM U M RATING S SYM BO L PARAMETER M IN IM U M 1 M A X IM U M UNITS In p u t-O u tp u t Power In te rn a lly pt D issipa tion T herm al R esis- j la nce J u n c tio n

MARKING PH12

Abstract: TMC2340-1 ph28 power supply 2340L5V PH-13 ph 77 PH17 MARKING PH24 PH25 PH31
Contextual Info: TMC2340 iiir r Digital Synthesizer Dual 16-Bit, 2 5 M 0 P S Th e T M C 2 3 4 0 perform s w avefo rm syn th esis, m odulation, and dem odulation. W h e n presented w ith a T T L clock signal and user-selected 15-bit am plitude and 3 2 -b it phase increm ent valu es, the T M C 2 3 4 0 au to m atically

2310 fx

Abstract: sla 1003 AS2295 MSC1161
Contextual Info: O K I semiconductor MSM6243 SPEECH SYNTHESIS LSI WITH 192 KBIT ROM GENERAL DESCRIPTION The O ki M S M 6 2 4 3 is a sin g le -ch ip , CM OS, speech syn th esis LSI for ADPCM system s. It co n tains 19 2 k b its of speech data ROM storage. T his IC has an in p u t interface, a tim ing generation circ u it, and

5218a

Abstract: 5218 a ic 5218 a sim 5218 LD 5218 5218P MSM5218 CSB384P 5205RS
Contextual Info: O K I Semiconductor 1SM5218 ADPCM S P E E C H A N A LY S IS /S Y N T H E S IS 1C G E N E R A L D E SC R IP TIO N T he M SM 5218 is a c o m p lete sp eech a n a ly s is / sy n th esis LSI fea tu rin g th e A d a p tiv e D iffer­ e n tia l P u ls e C o d e M o d u la tio n A D P C M

HCTR0320A

Abstract: hctr 0320 hughes 0320 PPL FREQUENCY SYNTHESIZER Hughes Microelectronics 0320A Two digit bcd adder circuit Hughes newport programmable and sine and 5khz Binary16
Contextual Info: HUGHES _ j C M O S Digital Frequency Synthesizer HCTR 0320A S O L ID STATE P R O D U C T S PRELIMINARY DATA DESCRIPTION The HCTR 0320 is a CM O S LSI p ro g ra m m a b le d iv id e by N c o u n te r w ith a ph ase /freq ue ncy de tector fo r fre q u e n cy synth esis o r phase locked lo op {PPL a p p lica tio n s. A m in im u m PPL

Contextual Info: PRECISION POWER WIREWOUND RESISTORS SILICONE COATED 1/2 WATT TO 50 WATT RESISTORS *CAPS ft C O W ♦DELAY LINES ^ 1 0 0 SERIES □ World's widest range of axial lead W W resistors! 0 .0 0 5 0 to 2MQ, tolerances to ±0.005% , 1/2W to 50W , numerous design options

Contextual Info: 1N5309 asi SILICON CURRENT REGULATOR DIODE DESCRIPTION The 1N5309 is Silicon Constant Current Diode Designed for General Purpose Power Supply and Signal Processing Applications. FEATURES PACKAGE STYLE DO-7 = 3.0 mA Nominal • ZT = 300 KÍ2 Minimum • Hermetic DO-7 Package

Contextual Info: MITSUBISHI Neh POWER MOSFET FY10AAJ-03A HIGH-SPEED SWITCHING USE FY10AAJ-03A OUTLINE DRAWING Dimensions in mm ~H H H H . y y y y © * 1.8 MAX. 0.4 1.27 SO URCE © G ATE © @ CD DRAIN • 4V DRIVE • V d s s . 30V

Contextual Info: 1N5290 asi SILICON CURRENT REGULATOR DIODE DESCRIPTION The 1N5290 is Silicon Constant Current Diode Designed for General Purpose Power Supply and Signal Processing Applications. FEA T U R ES P A C K A G E S T Y L E DO-7 0 .1 0 5 • Ip = 4 7 0 |¿A Nominal

Contextual Info: 1N5297 asi SILICON CURRENT REGULATOR DIODE DESCRIPTION The 1N5297 is Silicon Constant Current Diode Designed for General Purpose Power Supply and Signal Processing Applications. FEA T U R ES P A C K A G E S T Y L E DO-7 0 .1 0 5 = 1.0 mA Nominal • ZT = 800 KÍ2 Minimum

fscm 34078

Abstract: mfr 34078 14-Phase E5400 FSCM 34078 midwest
Contextual Info: NOTES: 1.0 SPECIFICATIONS: 1.1 FREQUENCY RANGE: 2.0 to 8.0 GHz 1.2 INSERTION LO SSM .O dB MAX. WHEN REFERENCED TO 6dB POWER DIVISION. 1.3 AMPLITUDE UNBALANCE: 0.5dB MAX. 1.4 PHASE BALANCE: 10° MAX. 1.5 VSWR: 1.50:1 MAX. 1.6 ISOLATION: 18dB MIN. 1.7 WEIGHT: 140 GRAMS MAX.

mfr 34078

Contextual Info: NOTES: 1.0 SPECIFICATIONS: 1.1 FREQUENCY RANGE: 2.0 to 8.0 GHz 1.2 INSERTION LOSS: 1.0dB MAX. WHEN REFERENCED TO 6dB POWER DIVISION. 1.3 AMPLITUDE UNBALANCE: 0.5dB MAX. 1.4 PHASE BALANCE: 10° MAX. 1.5 VSWR: 1.50:1 MAX. 1.6 ISOLATION: 18dB MIN. 1.7 INPUT POWER: 30 WATTS MAX.

esis power

Contextual Info: NOTES: 1.0 SPECIFICATIONS: 1.1 FREQUENCY RANGE: 0.5 to 2.0 GHz 1.2 INSERTION LOSS: 1.0dB MAX. WHEN REFERENCED TO 6dB POWER DIVISION. 1.3 AMPLITUDE UNBALANCE: 0.5dB MAX. 1.4 PHASE BALANCE: 10° MAX. 1.5 VSWR: 1.50:1 MAX. 1.6 ISOLATION: 18dB MIN. 1.7 INPUT POWER: 4.0 WATTS MAX.

BYV63

Abstract: Telefunken diode color code aeg rectifier BW61 BYV61 aeg telefunken
Contextual Info: A E G CORP 17E D 002=i42b □G G ' i f i 3 S 1 • BYV 61 •BYV 62 •BYV 63 ITilLiiFttllliSKlliil electronic Creative Technologies T^es-IS' Silicon M esa Diodes Applications: Very fast rectifier and switch for example for switch mode power supply Features:

mfr 34078

Contextual Info: NOTES: 1.0 SPECIFICATIONS: 1.1 FREQUENCY RANGE: 0.5 to 2.0 GHz 1.2 INSERTION LOSS: 1.0dB MAX. WHEN REFERENCED TO 6dB POWER DIVISION. 1.3 AMPLITUDE BALANCE: 0.5dB MAX. 1.4 PHASE BALANCE: 10° MAX. 1.5 VSWR: 1.50:1 MAX. 1.6 ISOLATION: 18dB MIN. 1.7 MAX. INPUT POWER:

snare drum ic

Abstract: esis power holtek sound gen snare drum sound ic CMOS drum generator holtek drum HT82142
Contextual Info: HT82142/HT3090 HOLTEK r r Nine Demo Rhythm Generator Features • • • • • • • • • O perating voltage: 2.4V~5V Low stand-by current Two operation mode options: - M anual mode: 4 drum sounds - Demo mode: 9 demo rhythm s 7 g rad es of tem po speed control

RS-296-E

Contextual Info: A C O M P A N Y OF M O D EL C C F -50 M e ta l Film R esisto rs Industrial, + 1%, ± 5% Tolerance FEA TU R ES • 1/3 watt power rating • 100PPM/°C standard, 50PPM/°C available upon request • Superior electrical performance • Flame retardant epoxy

Contextual Info: SSI 32P541B Am systems Read Data Processor A TDK Group/Company 2 November 1992 DESCRIPTION FEATURES The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of MFM or RLL encoded read signals.

Contextual Info: GENERAL PURPOSE 2W TO 25 WATT CERAMIC ENCASED RESISTORS PW SERIES Economical power resistors feature the industry’s widest resistance range, up to 100KQ! FEATURES • Low cost, fireproof construction ■ Delivery from stock! Refer to p. 4 . Non-stock items are

wsc-1

Abstract: 0431K
Contextual Info: A MODEL WSC W irewound Resistors C O M P A N Y OF B A L * T Precision Power, Surface Mount FEATURES Molded high-temperature encapsulation Available in non-inductive styles with Aryton-Perry windings for lowest reactive components ELECTRICAL SPECIFICATIONS

MC2830

Abstract: MC 2830 IR11XX RM-081
Contextual Info: fÆ SI IR11XX ROMBO TM Data Sheet Low Power, High Performance CMOS Gate Array and ROM Combo Features • 256K ROM: 32,768 words x 8 bits or 16,364 x 16 bits ■ Programmable ROM Enable active levels ■ 3V or 5V operating supply ■ 4875 available gates, 3200 usable gates