ESDR Search Results

Enhanced SDRAM

Contextual Info: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC

SM2603

Contextual Info: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz

Contextual Info: ESDR0524P Transient Voltage Suppressors Low Capacitance ESD Protection for High Speed Data The ESDR0524P transient voltage suppressor is designed to protect high speed data lines from ESD. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting

toa25

Abstract: VFM160-MH
Contextual Info: WILLAS Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER FM120-M+ SESDLL5V0WB THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: WILLAS FM120-M+ SESD5Z5CL THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: Industrial Temperature 16Mbit Enhanced Synchronous DRAM 1Mx16 ESDRAM Preliminary Data Sheet Features Description • • As a JEDEC superset standard, the Enhanced Synchronous DRAM ESDRAM is an evolutionary modification to the JEDEC standard SDRAM. The industrial temperature grade

Contextual Info: F n h n tm h v V ^ id i 64Mbit - Enhanced SDRAM llH lI ld S fl 8Mx8j 4Mx16 ESDRAM ^ m Memory Systems Inc. Product B rief Features • • • • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache

Contextual Info: ESDR7534 Low Capacitance TVS for LVDS Interfaces The ESDR7534 transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lightning. http://onsemi.com Features • Low Capacitance 3 pF Maximum Between I/O Lines and GND • Protection for the Following IEC Standards:

Contextual Info: WILLAS FM120-M+ SESDL5V0WB THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: WILLAS FM120-M+ ESDA6V1W5THRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

marking code AE SOD123

Contextual Info: WILLAS FM120-M+ SESDU5V0WB THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

ON SEMICONDUCTOR MARKING DIAGRAM SOD-123

Contextual Info: WILLAS FM120-M+ SESD5ZxxVTHRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: WILLAS FM120-M+ SESDBV5V0WB THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: ESDR0502B Transient Voltage Suppressor ESD Protection Diodes with Ultra−Low Capacitance The ESDR0502B is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping

Contextual Info: SM2405 - Enhanced SDRAM 512Kx32 ESDRAM Product Brief Features • 100% Function and Timing Compatible with JEDEC standard SDRAM • Pin Compatible with JEDEC Std. SGRAM • Integrated 8Kbit SRAM Row Cache per Bank • Synchronous Operation up to 150MHz • 24ns Row Access Latency, 10ns Column Latency

Contextual Info: ESDR0502B, ESDR0502B Transient Voltage Suppressor ESD Protection Diodes with Ultra−Low Capacitance The ESDR0502B is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping

Contextual Info: ESDR0502N Ultra Low Capacitance ESD Protection Array for High Speed Data Line Protection The ESDR0502N ultra low capacitance TVS array is designed to protect high speed data lines from ESD. Ultra−low capacitance and high level of ESD protection makes this device well suited for use in

SOD123 MARKING CODE

Contextual Info: WILLAS FM120-M+ SESD3ZxxCTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

2SC2688

Abstract: 2SC2688L NPN Transistor VCEO 1000V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

2sc2688

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC2688 NPN SILICON TRANSISTOR N PN SI LI CON T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SC2688 is designed for use in Color TV chroma output circuits. ̈ FEAT U RES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

Contextual Info: ESDR0502N Ultra Low Capacitance ESD Protection Array for High Speed Data Line Protection The ESDR0502N ultra low capacitance TVS array is designed to protect high speed data lines from ESD. Ultra−low capacitance and high level of ESD protection makes this device well suited for use in

transistor std A13B

Abstract: A13B fast diode ifm if 40 A transil IEC1000-4-2 S020 SO20 SSOP20 SSOP20 300 mil
Contextual Info: ESDR6V1-27FUx  Application Specific Discretes A.S.D.TM ESD PROTECTION MONOLITHIC 9-BIT WIDE TRANSILTM ARRAY MAIN APPLICATIONS Where high level protection in ESD sensitive equipment is required, such as : - Computers - Printers - Business machines - Communication systems

Contextual Info: 168-pin Low Profile ESDRAM DIMMs 32MB, 64MB, 128MB Preliminary Data Sheet Features Symbol Pin 85 Vss 127 Vss 86 DQ32 128 CKE0 S2# 87 DQ33 129 S3# DQMB2 88 DQ34 130 DQMB6 DQMB3 89 DQ35 131 DQMB7 48 DNU 90 Vdd 132 RFU 49 Vdd 91 DQ36 133 Vdd DQ5 50 NC 92 DQ37

Contextual Info: SM2405 - Enhanced SDRAM 512Kx32 ESDRAM Product Brief Features • 100% Function and Timing Compatible with JEDEC standard SDRAM • Pin Compatible with JEDEC Std. SGRAM • Integrated 8Kbit SRAM Row Cache per Bank • Synchronous Operation up to 166MHz • 22ns Row Access Latency, 10ns Column Latency