ESD22 Search Results

ESD22 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ESD224DQAR		Texas Instruments	4-Channel Low Clamping ESD Protection Device for HDMI Interface 10-USON -40 to 125

ESD22 Datasheets (4)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ESD221U102ELE6327XTMA1	Infineon Technologies	Circuit Protection - TVS - Diodes - TVS DIODE 5.3V 11V TSLP-2-19	Original	PDF	433.97KB
ESD224DQAR	Texas Instruments	ESD224 4-CHANNEL LOW CAP ESD	Original	PDF	1.8MB
ESD224EVM	Texas Instruments	Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - EVAL MODULE FOR ESD224	Original	PDF	315.56KB
ESD227U1W01005E6327XTSA1	Infineon Technologies	TVS DIODES SG-WLL-2	Original	PDF	837.75KB	14

ESD22 Price and Stock

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Infineon Technologies AG ESD221U102ELE6327XTMA1 ESD Suppressor Diode TVS Uni-Dir 5.3V 11Vc 2-Pin TSLP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	ESD221U102ELE6327XTMA1		120,000		5,310	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Avnet Americas	ESD221U102ELE6327XTMA1	Tape & Reel			15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	ESD221U102ELE6327XTMA1		120,000		1	1 - 10 - 100 $0.07 1000 $0.06 10000 $0.05	Buy Now
TME	ESD221U102ELE6327XTMA1				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	ESD221U102ELE6327XTMA1			13 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG ESD227U1W01005E6327XTSA1 ESD Suppressor TVS Uni-Dir 5.5V 2-Pin WLL T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	ESD227U1W01005E6327XTSA1		45,000		12,097	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	ESD227U1W01005E6327XTSA1		15,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	ESD227U1W01005E6327XTSA1		11,150		249	1 - 10 - 100 - 1000 $0.03 10000 $0.03	Buy Now
Avnet Americas	ESD227U1W01005E6327XTSA1	Tape & Reel		16 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Arrow Electronics ()	ESD227U1W01005E6327XTSA1		15,000	16 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	ESD227U1W01005E6327XTSA1		11,150		1	1 $0.15 10 $0.10 100 $0.05 1000 $0.03 10000 $0.03	Buy Now
Newark ()	ESD227U1W01005E6327XTSA1	Tape & Reel	14,345		100	1 - 10 - 100 $0.11 1000 $0.07 10000 $0.07	Buy Now
	ESD227U1W01005E6327XTSA1	Cut Tape	14,345		5	1 - 10 $0.15 100 $0.11 1000 $0.07 10000 $0.07	Buy Now
Rochester Electronics	ESD227U1W01005E6327XTSA1		45,000		1	1 - 10 - 100 $0.03 1000 $0.03 10000 $0.02	Buy Now

TME	ESD227U1W01005E6327XTSA1				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments ESD224DQAR ESD Suppressor TVS Bi-Dir 3.6V 10-Pin USON T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	ESD224DQAR		1,319		32	1 - 10 - 100 $0.34 1000 $0.27 10000 $0.27	Buy Now
Arrow Electronics	ESD224DQAR	Cut Strips	1,319	12 Weeks	1	1 $0.73 10 $0.50 100 $0.34 1000 $0.27 10000 $0.27	Buy Now
Win Source Electronics	ESD224DQAR		35,370			1 - 10 - 100 - 1000 $0.22 10000 $0.21	Buy Now
Texas Instruments ESD224EVM ESD224 ESD Suppressor Evaluation Board
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	ESD224EVM		10		1	1 $63.33 10 $63.33 100 $63.33 1000 $63.33 10000 $63.33	Buy Now
Arrow Electronics	ESD224EVM		10	12 Weeks	1	1 $63.33 10 $63.33 100 $63.33 1000 $63.33 10000 $63.33	Buy Now
Vyrian	ESD224EVM		7,023			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Nexperia PESD22VV1BSFYL - Tape and Reel (Alt: PESD22VV1BSFYL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PESD22VV1BSFYL	Tape & Reel			27,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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ESD22 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
hd 5888 Contextual Info: SGNE090MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 51.0dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 20.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater	Original	sgne090mk hd 5888	PDF
Contextual Info: SGNE010MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 40.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=3.5GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater	Original	sgne010mk	PDF
EEPROM Abstract: M24M01-HR 12943 M24XXX M24M01-R AEC-Q100-002 J-STD-020D M24M01-W M24M01-H Contextual Info: M24M01-HR M24M01-R, M24M01-W 1 Mbit serial I²C bus EEPROM Features • Compatible with all I2C bus modes: – 1 MHz Fast-mode Plus – 400 kHz Fast mode – 100 kHz Standard mode SO8 MN 150 mils width ■ Memory array: – 1 Mb (128 Kbytes) of EEPROM – Page size: 256 bytes	Original	m24m01-hr m24m01-r m24m01-w 40-year +6eeprom 12943 m24xxx aec-q100-002 j-std-020d m24m01-h	PDF
Contextual Info: SGNE070MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 49.5dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 21.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater	Original	sgne070mk rating92	PDF
HD 5888 Contextual Info: SGNE090MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 51.0dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 20.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater	Original	sgne090mk hd 5888	PDF
emergency lighting 230v circuit diagram Abstract: SF263 ESC425S led 230v application circuit diagram of 230v 50hz ac input 230v 50hz Contextual Info: Control & Indication catalogue 15 Control & indication Switches, contactors, relays, push buttons & emergency lighting This section provides a selection of Isolating, changeover and selector switches, push buttons, indicator lights, delay timers, emergency lighting test packages, DIN socket outlets and contactors that	Original	emergency lighting 230v circuit diagram sf263 esc425s led 230v application +1circuit diagram of 230v 50hz ac input 230v 50hz	PDF
Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency	Original	egn21c105i2d 14ghz 25deg /-10mhz +145dbm	PDF
EGN26C070I2D Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egn26c070i2d 25deg /-10mhz	PDF
Contextual Info: SGN27C160I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	sgn27c160i2d 655ghz 25deg	PDF
Contextual Info: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency	Original	egn21c320iv 14ghz 25deg	PDF
Contextual Info: SGNE045MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 47.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.2GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater	Original	sgne045mk	PDF
MTTF Abstract: 60Ghz GaN amplifier 160W JESD22-A114 EGN26C160I2D Contextual Info: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egn26c160i2d gate-sourc05 mttf 60ghz +2gan amplifier 160w jesd22-a114	PDF
egnb045mk Abstract: JESD22-A114 Contextual Info: EGNB045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=2.2GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egnb045mk jesd22-a114	PDF
EGN26C030MK Abstract: 60Ghz JESD22-A114 Contextual Info: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egn26c030mk 60ghz jesd22-a114	PDF

EGN16C105MK Abstract: 105w JESD22-A114 Contextual Info: EGN16C105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain :19dB(typ.) @ f=1.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egn16c105mk total154 105w jesd22-a114	PDF
EGN21C070MK Abstract: JESD22-A114 Contextual Info: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egn21c070mk 14ghz jesd22-a114 jeia/esd22-a115	PDF
Contextual Info: 24 23 21 22 19 20 17 IB 16 15 14 12 13 10 11 V 7 8 MISSING SYMBOLS SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. 2.4 M -— 1 .2 TOTAL NO OF INSPECTIONS	OCR Scan	26jn02 pm002191	PDF
transistor irf 649 Abstract: 8 GHz VCO TCXO 10 MHz philips IRf 652 irf 3740 irf 536 Contextual Info: IN TE G R A TE D CIRCUITS [nlEET UMA1021 AM Low-voltage frequency synthesizer for radio telephones P relim inary specification File under Integrated C ircuits, IC17 Philips Semiconductors 1998 M ar 03 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification	OCR Scan	uma1021 435io2/i2oo/oi/p transistor irf 649 8 ghz vco +4tcxo 10 mhz philips irf 652 irf 3740 irf 536	PDF
EGN26C030MK Contextual Info: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	60ghz egn26c030mk -j100	PDF
EGNC105MK Contextual Info: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	51dbm egnc105mk -j100	PDF
EUDYNA Contextual Info: EGNB070MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ P3dB ・High Efficiency: 70%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egnb070mk -j100 eudyna	PDF
Contextual Info: EGNB045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=2.2GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egnb045mk	PDF
B4846 Abstract: S21 Package GRM188B11H102KA01D CS3376C Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	14ghz egn21c105i2d /-10mhz 45dbm +4b4846 s21 package grm188b11h102ka01d cs3376c	PDF
Contextual Info: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 16.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	egn35c030mk	PDF

ESD22 Search Results

ESD22 Result Highlights (1)

ESD22 Datasheets (4)

ESD22 Price and Stock

Infineon Technologies AG ESD221U102ELE6327XTMA1

Infineon Technologies AG ESD227U1W01005E6327XTSA1

Texas Instruments ESD224DQAR

Texas Instruments ESD224EVM

Nexperia PESD22VV1BSFYL

ESD22 Datasheets Context Search

hd 5888

EEPROM

HD 5888

emergency lighting 230v circuit diagram

EGN26C070I2D

MTTF

egnb045mk

EGN26C030MK

EGN16C105MK

EGN21C070MK

transistor irf 649

EGN26C030MK

EGNC105MK

EUDYNA

B4846