ERSE RDS 80 Search Results

1C00

Abstract: 2SK805
Contextual Info: P o w er F-MOS FET 2SK 805 2SK805 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N r e s is ta n c e R Ds on : R Ds (on) = 0 .1 2 il (ty p .) • H igh sw itch in g r a te : t f = 120ns (ty p .) • N o se c o n d a ry b reak d o w n

2SK1255

Contextual Info: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS on : RDS (on) l = 0 .1 3 5 il (ty p .) Unit: mm • High sw itc h in g r a te : t ( = 5 3 n s (ty p .) • N o s e c o n d a ry b reak d o w n

YTFP250

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE it - YTFP250 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ^12±Û 8 DRIVE APPLICATIONS. A FEATURES:

2SK1257

Abstract: SS3200 TF320
Contextual Info: P o w er F-MOS FET 2SK1257 2S K 1257 Silicon N-channel Power F-M O S F E T • Features ■ Package Dimensions • Low ON r esista n ce Rus on : R DS (on) l = 0 .0 2 4 il (typ.) Unit: mm • H igh sw itch in g r a te : t f= 3 2 0 n s (ty p .) • No s e c o n d a ry b reak d o w n

NF C 93-400

Abstract: 2SK1944-01 SC-65 A2297
Contextual Info: 2SK1944-01 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • l ow on-resistance • No secondary breakdown • l ow driving power • High voltage • V gs = ±30V Guarantee • Avalanche-proof

Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET . » TYPE NAME : 2SK2808-01 MR SPËC. NO, Fuji Electric Co.,Ltd. T his Specification is subject to c h a n g e w ithout notice. DATE ' NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED - 1 DWG. NO. DRAW N /

Contextual Info: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage

2SK963

Abstract: 2SK9
Contextual Info: 2SK963 Power F-MOS FET 2SK963 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R us on : R ds (on) = 0 .4 5 i l (ty p .) • High sw itc h in g r a te : t f = 4 5 n s (ty p .) • No se c o n d a ry b reak d o w n

2SK1030

Abstract: 2SK1030A
Contextual Info: Power F-MOS FET 2SK1030, 2SK1030A 2SK1030, 2SK1030A Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON r e s is ta n c e R ds on : R ds (on) = 3 .0 f i (ty p .) Unit: mm • H igh sw itch in g r a te : ti = 4 0 n s ( ty p .)

2SK963

Abstract: power 45ii 45II S240
Contextual Info: P o w er F-MOS FET 2SK963 2SK963 Silicon N-channel Power F-MOS FET Package Dim ensions • Features • L ow ON re s is ta n c e R DS on : R ds (on) = 0 .4 5 ii (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 4 5 n s (ty p .) 3.7m ax. 7.3max. • No se c o n d a ry b reak d o w n

NESM230

Abstract: NESM230Z
Contextual Info: Ti^sr NESM230 NESM230Z ^MW^NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R ds(on • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)

Contextual Info: blE D 2 S • J 2 3 4 l , MHTbSDS 0 0 1 2 ^ 2 SSI ■ H I T 4 2 S J 2 3 4 ( s ) -H I T A C H I / (OPTOELECTRONICS) Silicon P Channel MOS FET Application DPAK High speed power switching Features ft4 • • • • Low on-resistance High speed switching

mp42

Contextual Info: MP4201 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7T-MOSm 4 IN 1 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 5.2 ± 0 .2 LOAD SWITCHING. • 4-Volt Gate D rive Available

Contextual Info: 2SK2051-L.S FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET -F - I I • F eatures ■ Outline Drawings • High speed switching • Lew on-resistance • No secondary breakdown

2N7335

Abstract: IRFG110 IRFG9110 JANTX2N7335 JANTXV2N7335
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IÖ R IRFG9110 2N7335 JANTXSN7335 JANTXVSN7335 HEXFET TRANSISTORS 4P CHANNEL POWER MDBFETs 14 L E A D D U A L -IN -L IN E Q U A D C E R A M IC S ID E B R A Z E D PAC KAG E [REF: MIL-S-19500/599] Product Summary

2sk1124

Abstract: YS 150 003
Contextual Info: 2SK1124 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CH O PPER REGULATOR, DC-DC C O NVERTER AND M OTOR Unit in m m D R I V E APPLICATIONS. • L o w Dra i n - S o u r c e O N R e s i s t a n c e : Rjjg(0N)= -022SÎ( T y p .)

CK408

Abstract: CK-408
Contextual Info: SÌ4425DY Vishay Siticonix P-Channel 30-V D-S MOSFET Vo»|Vi nDS(ON) (Q) iD (A) 0.014 @ V G S = - 1 0 V ±11 0.023 @ V Gg = - 4 .5 V ± 8.5 -3 0 S S S W $0-8 H! rm Top V iew D O D D P -C h a n n e i M O S F E T ABSO LU TE M A X IM U M R A T I N G S I T fi

IRF7210

Contextual Info: PD- 91844A IRF7210 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.007Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: Tem ic SÌ6802DQ S e m i c o n d u c t o r s N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary V d s V rDS(on) ( ^ ) Id (A) 0.075 @ VGS = 4.5 V ±3.3 0.110 @ VGs = 3.0 V ±2.7 20 TSSOP-8 , It O - — ‘ |- * S o u rc e P in s 2 , 3, 6 , a n d 7

2SK series

Abstract: oms 450 DDD3121
Contextual Info: 6-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET - FAP-H SERIES • Features ■ Outline Drawings • High speed sw itch in g • Low o n-resistance • N o secondary b reakd ow n • L ow driving p o w er

Contextual Info: International lö R Rectifier Provisional Data Sheet No. PD-9.885A R EP ET ITIV E A V A L A N C H E IRHN9150 A N D dv/dt R A T E D HEXFET TRANSISTOR p -ch a n n e l RAD HARD -100 Volt, 0.1200 , RAD HARD HEXFET Product Summary International Rectifier’s P-channel RAD HARD tech­

IRF7233

Contextual Info: PD- 91849D IRF7233 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.020Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

ic 94101

Abstract: innovative dro IRF7342D2
Contextual Info: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V

2SK945

Abstract: 2SK9
Contextual Info: TOSHIBA 2SK945 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • L o w D ra in -S o u rc e O N R esistan ce • r d s (o n ) = (T y p -)