ERIE TRIMMER CAPACITOR Search Results

ERIE CAPACITORS

Abstract: GX-0600-55-22 MURATA ERIE CAPACITOR erie capacitor 2443 MOTOROLA transistor SAHA Mica capacitors Erie TRIMMER CAPACITOR SAHA erie .33 400 MRF658
Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF658 The RF Line NPN Silicon RF Power Transistor D esigned for 12.5 Voit U H F large-signal, common emitter, class-C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. 65 W, 512 MHz

ERIE CAPACITORS

Abstract: MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, c la s s-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

transistor D 2581

Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics

Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

ERIE CAPACITORS

Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

MRF658

Abstract: SAHA Mica capacitors ERIE CAPACITORS nippon capacitors MURATA ERIE CAPACITOR GX-0600-55-22 MOTOROLA 381 equivalent CAPACITOR MURATA 420 NPN Silicon RF Transistor murata erie
Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

Contextual Info: CHIP TRIMMER CAPACITORS TZC03 SERIES T h is n e w lo w p r o file c h ip tr im m in g c a p a c ito r is s p e c if ic a lly d e s ig n e d t o m e e t t h e r e q u ir e m e n ts o f h ig h d e n s it y s u r fa c e m o u n t a p p lic a tio n s a n d a u to m a t e d p la c e m e n t e q u ip m e n t.

ERIE ceramic capacitor

Abstract: MURATA ERIE CAPACITOR murata SAW murata ceramic capacitor erie ERIE murata ceramic
Contextual Info: HIGH FREQUENCY CLOCK OSCILLATORS SH Series SH2128-1 P IN 1 ^ FUNCTIO N O utput Com plim ent 7 Ground Vee 8 O utput 14 +5 VCr 2 ,6 ,9 ,1 3 Ground 515 max. m (20.70 m ax.) t 515 max. (t&08 max.) * SPECIFICATIONS ' MODEL SH2128AF-1 Saw oscillator High frequency

vk200 choke

Abstract: MVM010W MVM010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T V H F/U H F Am plifiers N -Chan nel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Forward Gate Current •g f 10 mAdc Total Device Dissipation @ TA = 25°C

rde 090

Abstract: BFJ309LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit

vk200 choke

Abstract: j310 j310c variable trimmer MVM010W SM 4151 J308
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF A m plifiers N -C h a n n e l — Depletion J308 J309 J310 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VG S 25 Vdc Forward Gate Current 'G F 10 mAdc

CL-21 capacitor

Abstract: BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T VHF/UHF Am plifier Transistor MMBFJ309LT1 MMBFJ310LT1 N -C h a n n e l 2 SOURCE MAXIMUM RATINGS Rating D rain-Source Voltage G ate-S ource Voltage Gate Current Symbol Value Unit V DS 25 Vdc VG S 25 Vdc !g 10 mAdc

MRF321

Abstract: ferroxcube 56-590-65
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.

MRF323

Abstract: ferroxcube 56-590-65
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.

vk200 coil

Abstract: FERROXCUBE VK200 jmc 5201
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts

ferroxcube 56-590-65

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

jmc 5201

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

vk200 coil

Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON

transistor c 2316

Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR

Transistor Equivalent list

Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very

Transistor Equivalent list

Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency

SD1895-03

Abstract: murata 2.4 GHz filter SD1895-3
Contextual Info: SD1895-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P OUT = 15 W MIN. WITH 9.2 dB GAIN .250 x .320 2LFL M170 epoxy sealed

Transistor D 2494

Abstract: fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F8 97 The RF Line N P N S ilic o n R F P o w e r T ra n s is to r Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating

SD1895-3

Abstract: SD1895-03
Contextual Info: SD1895-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE POUT = 15 W MIN. WITH 9.2 dB GAIN .250 x .320 2LFL M170 epoxy sealed