EQUIVALENT TRANSISTOR TO 2SK Search Results

2SA1955

Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
Contextual Info: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent

Contextual Info: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent

2SK1825

Contextual Info: TO SH IBA 2SK1825 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2S K1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

IFN147

Contextual Info: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA

2SK1826

Contextual Info: TO SHIBA 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

K1825

Contextual Info: TOSHIBA 2SK1825 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2S K1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

2SK1825

Contextual Info: TO SHIBA 2SK1825 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

2sk112

Contextual Info: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA

FC18

Abstract: 2SC4639 2SK2394 Marking 18 marking PS FET
Contextual Info: Ordering number:EN4983 FC18 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Features Package Dimensions • Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the

2SC4639

Abstract: FC18 FC18F 2SK2394 ITR10364 FET MARKING DB64
Contextual Info: Ordering number:ENN4983 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET FC18 High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Package Dimensions • Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the

2SK147

Abstract: 2SK147 equivalent IFN147
Contextual Info: E6 8-94 IF N 1 4 7 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current

2SK146

Abstract: IFN146
Contextual Info: E5 9 -9 7 IFN 146 DUAL N -CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE AUDIO AMPLIFIER ♦ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

2SK146

Abstract: 2sk146 datasheet 2sk146 equivalent equivalent transistor TO 2sk146 IFN146
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-5 D-5 01/99 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage

2SK147 equivalent

Abstract: 2SK147 IFN147
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage

2sk146

Abstract: ifn146 TO71 package 2sk146 equivalent
Contextual Info: E5 8-94 IF N 146 D U A L N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE AUDIO AMPLIFIER Absolute maximum ratings at TA = 25"C Equivalent to Japanese 2SK146 Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current

smd transistor marking 12W

Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
Contextual Info: 8. P r e c a u t io n s in H a n d l i n g s urfa c e m o u n t d e v ic e s S M D types of surface m ount transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor’s envelope is com­ parable to those of the TO-236 and SOT-23

2SK112

Abstract: pa 0016 equivalent equivalent transistor c 495 ifn112 NJ132H
Contextual Info: E4 9 -9 7 IF N 1 1 2 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

Power MOSFET, toshiba

Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2SK1830

Abstract: HN7G05FU RN2301
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

2SA1955

Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

HN7G01FU

Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

2SK1830

Abstract: HN7G05FU RN2301
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent