EQUIVALENT IRF 44 Search Results

VOGT 503

Abstract: 503 20 010 10 vogt vogt 503 20 vogt l9 TCA440N vogt 503 20 010 10 vogt l8 VOGT 503 10 VOGT 505 vogt l3
Contextual Info: TCA 440-N DESCRIPTION FEATURES TCA440 is a m onolithic 1C, especially devel­ oped for AM receivers up to 50MHz. It in­ cludes a RF stage with AGC, a balanced mixer, separate oscillator and an IF am plifi­ er with AGC. Because of its low current consumption and o f its internal stabilization

EMW3165

Abstract: EMW3165-P
Contextual Info: 上海庆科信息技术有限公司 产品文档 QK-QW-001 DS0007E_EMW3165 版本：1.0 版 编制 / 日期：李旸 ； 2015 年 01 月 20 日 会审/ 日期：/ ； 年 / 审核 / 日期：沈建华任建宏 ； 2015 年 01 月 26 日 批准 / 日期：王永虹

CXD2064Q

Abstract: irf 44 n L3433
Contextual Info: CXD2064Q Digital Comb Filter NTSC/PAL For the availability of this product, please contact the sales office. Description The CXD2064Q is an adaptive intra-field comb filter compatible with NTSC and PAL systems, and can provide high-precision Y/C separation with a

Contextual Info: Philips Semiconductors Product specification 1GHz low-voltage Fractional-N synthesizer DESCRIPTION SA7025 PIN CONFIGURATION The SA7025 is a monolithic low power, high performance dual frequency synthesizer fabricated in QUBiC BiCMOS technology. Featuring Fractional-N division with selectable modulo 5 or 8

SA7025DK

Abstract: irf 4095 SA620 SA7025
Contextual Info: Philips Semiconductors Product specification Low-voltage 1GHz fractional-N synthesizer DESCRIPTION SA7025 PIN CONFIGURATION The SA7025 is a monolithic low power, high performance dual frequency synthesizer fabricated in QUBiC BiCMOS technology. Featuring Fractional-N division with selectable modulo 5 or 8

CXD2093Q

Contextual Info: CXD2093Q Digital Comb Filter NTSC For the availability of this product, please contact the sales office. Description The CXD2093Q is an adaptive intra-field three lines comb filter for NTSC systems, and can provide high-precision Y/C separation with a single chip.

irf 4095

Abstract: 1GHZ DIVIDE BY 64 PRESCALER SA7025 SA7025DK SR00602 SR00600
Contextual Info: INTEGRATED CIRCUITS SA7025 Low-voltage 1GHz fractional-N synthesizer Product specification IC17 Data Handbook Philips Semiconductors 1996 Aug 6 Philips Semiconductors Product specification 1GHz low-voltage Fractional-N synthesizer DESCRIPTION SA7025 PIN CONFIGURATION

Contextual Info: Ordering number:ENN3968 Monolithic Linear IC LA4589W 1.5V Stereo Headphone Preamplifier and Power Amplifier Overview Package Dimensions The LA4589W is a 1.5V stereo headphone preamplifier and power amplifier IC that provides all the functions of a complete playback system in a single chip, making it ideal

Contextual Info: Ordering number:ENN3968 Monolithic Linear IC LA4589W 1.5V Stereo Headphone Preamplifier and Power Amplifier Overview Package Dimensions The LA4589W is a 1.5V stereo headphone preamplifier and power amplifier IC that provides all the functions of a complete playback system in a single chip, making it ideal

Contextual Info: SANYO SEMI CONDUCTOR CORP S3E j Ordering num ber: EN3968_ | D • ■ inqnm i 7T i7ü7b n n n c , r, O D D ^im m * TSAJ Monolithic Linear 1C LA4589W No. 3968 I SA \YO i 1.5 V Stereo Headphone Preamplifier and Power Amplifier 7H-OS- Of PINOUT OVERVIEW

PD7811

Abstract: capacitor MKL d78pg11 153 SP-J eprom 2732A nec uPD7811 smh 210
Contextual Info: ¿/PD78PG11 HIGH-END, 8-BIT, SIN G LE -C H IP N M 0 S m ic r o c o m p u t e r W ITH P IG G Y B A C K EPRO M W ML W NEC Electronics Inc. Description Pin Configuration The NEC /UPD78PG11 is a prototyping device used to emulate the masked-ROM //PD7811. The user can

IRf 9024

Abstract: transistor FR 9024 inverting amplifier with gain 0.75 4468 2SB1295 LA3235W LA4590W SQFP48 SQFP-48 BE430
Contextual Info: Ordering number : EN4468A Monolithic Linear IC LA4590W 1.5 V Stereo Headphone Preamplifier and Power Amplifier Overview Package Dimensions The LA4590W is a system IC that collects the functions required for a playback set in a single chip, and reduces the number of required external components. Furthermore,

2SB1295

Abstract: LA4587M 32 chanels audio amplifier circuit diagram nfc2
Contextual Info: Ordering number: EN5204A Monolithic Linear IC LA4587M Preamplifier + Power Amplifier for 1.5 V Headphone Stereos Overview Package Dimensions The LA4587M is a system IC that includes all of the necessary functions for a playback set on a single chip, reducing the

IRf 9024

Abstract: FR 9024 ic 4468 transistor FR 9024 4468 8 pin
Contextual Info: Ordering number : EN4468A Monolithic Linear IC LA4590W 1.5 V Stereo Headphone Preamplifier and Power Amplifier Overview Package Dimensions The LA4590W is a system IC that collects the functions required for a playback set in a single chip, and reduces the number of required external components. Furthermore,

W922

Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
Contextual Info: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier

IRFIZ34N

Abstract: IRFZ34N MOSFET 150 N IRF
Contextual Info: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier

IRFIZ46N

Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
Contextual Info: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier

PMB2251

Abstract: BAC C45 FN PMB 2251 C1024D FM Modulator 2GHz
Contextual Info: Wireless Components Transmitter PLL Up-Conversion Loop Modulator PMB 2251 Version 1.3 Specification August 1999 preliminary Revision History: Current Version: 08.99 Previous Version:Data Sheet Page (in previous Version) Page (in current Version) Subjects (major changes since last revision)

Equivalent IRF 44

Abstract: ultra low igss pA IRL2505 IRLI2505
Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

1501a

Abstract: IRFZ24N IRFIZ24N irf 480
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRFIZ24N

Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier

Equivalent IRF 44

Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRFIZ46N

Abstract: IRFZ46N IRFZ46N equivalent irf 480 IRF 1040
Contextual Info: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier