EQUIVALENT IRF 1010 Search Results

PD7811

Abstract: capacitor MKL d78pg11 153 SP-J eprom 2732A nec uPD7811 smh 210
Contextual Info: ¿/PD78PG11 HIGH-END, 8-BIT, SIN G LE -C H IP N M 0 S m ic r o c o m p u t e r W ITH P IG G Y B A C K EPRO M W ML W NEC Electronics Inc. Description Pin Configuration The NEC /UPD78PG11 is a prototyping device used to emulate the masked-ROM //PD7811. The user can

nec uPD7811

Abstract: capacitor MKL uPD7811 stc 12MHz 00111R PD7811 eprom 2732A 153 SP-J PD78PG11 UP*7811
Contextual Info: NEC ¿/PD78PG11 HIGH-END, 8-BIT, SINGLE-CHIP NMOS MICROCOMPUTER WITH PIGGYBACK EPROM NEC Electronics Inc. D e scrip tio n Pin C o n fig u ra tio n T h e N E C ¿/PD78PG11 is a prototyping device used to emulate the m asked-RO M /UPD7811. Th e user can insert a standard EP R O M 2732A or 2764 into the

irf 100v 200A

Abstract: transistor IRF 610 IRF 840 equivalent transistor irf 840 diode Marking code WT
Contextual Info: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

transistor KSP 42

Abstract: irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel
Contextual Info: ORDERING INFORMATION KSV 3100A C N/ + BURN-IN OPTIONAL (SEE BURN-IN PROGRAM) PACKAGE TYPE (SEE EACH SPEC OF DEVICE) OPERATING TEMP IC’S ONLY BLANK: SEE INDIVIDUAL SPEC C : 0 - 70°C I : - 40 - 85°C M : - 5 5 - + 125°C DEVICE NUMBER AND SUFFIX (OPTIONAL)

application of colpitts oscillator

Abstract: colpitts oscillator 50MHz Colpitts Colpitts circuit design IRF 949 IRF C20 ZETEX Part Mark RFA colpitts crystal oscillator POCSAG MV6639
Contextual Info: SL6649-1 3115 - 4.1 SL6649-1 200MHz DIRECT CONVERSION FSK DATA RECEIVER The SL6649-1 is a low power direct conversion radio receiver for the reception of frequency shift keyed transmissions. It features the capability of 'power down' for battery conservation.

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRFI1310N

Abstract: IRF1310N 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

IRFz44n equivalent

Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

IRF3205 equivalent

Abstract: irf3205 mosfet transistor irf3205 DRIVER IRF3205 TO-220 EK 110 IRF3205 IRF3205 E DATASHEET IRF3205 IR Equivalent IRF 44 DSA0030791
Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω

irf 930

Abstract: IRF4905 equivalent SEC IRF 640 R 133 A IRF4905 IRFI4905 equivalent of irf4905 IRF 260 N
Contextual Info: PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -41A

irf 100v 200A

Abstract: transistor irf 840 IRF 840 equivalent
Contextual Info: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Equivalent IRF 44

Abstract: IRL3705 IRL3705N equivalent IRF 870 IRL3705N IRLI3705N mosfet IRF 870
Contextual Info: PD - 9.1369B IRLI3705N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.01Ω

irf*24n

Abstract: IRF9Z24N IRFI9Z24N
Contextual Info: PD - 9.1529A IRFI9Z24N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.175Ω G ID = -9.5A

delta dps 298 cp

Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Contextual Info: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X

Equivalent IRF 44

Abstract: MOSFET IRF 630 IRLIZ44N IRLZ44N
Contextual Info: PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.022Ω

Equivalent IRF 44

Abstract: IRLI3705N IRL3705N IRF 870
Contextual Info: PD - 9.1369B IRLI3705N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.01Ω

irf 100v 200A

Contextual Info: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRLI3705N

Abstract: IRL3705N
Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-185-24 IRLI3705N HEXFET TO-220 PD - 9.1369B IRLI3705N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology

irf 930

Abstract: IRF4905 equivalent IRF4905 P-channel power IRF 640 mosfet 1526a irf 480 55V MOSFET P-Channel IRF4905 IRFI4905
Contextual Info: PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -41A

IRLZ44N equivalent

Abstract: IRLIZ44N IRLZ44N Equivalent IRF 44
Contextual Info: PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.022Ω

IRF3205 equivalent

Abstract: irf 630 IRF3205 IRFI3205 irf3205 mosfet transistor IRF3205 TO-220
Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω

Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω

IRLIZ44N

Abstract: IRLZ44N
Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-07 IRLIZ44N HEXFET TO-220 PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology

IRL520N

Abstract: IRLI520N mosfet 60v 60a
Contextual Info: PD - 9.1496 IRLI520N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V