EQUAL TRANSISTER Search Results

MMBT2907ALT1G

Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Contextual Info: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage

MMBT2907ALT1G

Abstract: transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Contextual Info: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage

CMOS op-amp

Contextual Info: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 1 HIGH PERFORMANCE, HIGH RELIABILITY, CMOS ARRAY FAMILY

USI6000

Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
Contextual Info: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer

S3 TRIO 64

Contextual Info: UNITED MICROELECTRONICS Ì 2 D Ë | TBSSôia 0Q004SS 3 9325812 U N IT E D M IC R O E L E C T R O N IC S 92D 00455 D J l7 7 -/3 U M 5101 rr.T .n Voice Recording and r ” " i Reproducing CTJ- Features • DRAM is used as a voice data memory. ■ The RC oscillator makes sample rate changing fea%

d2166

Abstract: Hyperstone ding dong GMS30C2116 GMS30C2132 d1431 6116 sram d557 d2529 sr0n
Contextual Info: Jun 13, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2116 GMS30C2132 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may serve

Hyperstone

Abstract: ding dong GMS30C2116 GMS30C2132 GMS30C2216 GMS30C2232 d1135
Contextual Info: Jun. 29, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2216 GMS30C2232 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may

fe 1.1s

Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
Contextual Info: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low

Contextual Info: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-FET input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062

NJM062

Contextual Info: J-fET INPUT O P E R A M M L AMPLIFIER ^ NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which w ere designed as low-power versions of the NJM082. T hey featu re high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062

KS5221

Abstract: KS5221E
Contextual Info: KS5221 CMOS DIGITAL INTEGRATED CIRCUIT BIPOLAR STEPPING MOTOR DRIVE ANALOG CLOCK The KS5221 series w ith alarm fun ction is CMOS integrat­ ed c irc u it fo r use in c lo c k w ith b ip o la r ste p p in g motor. FUNCTIONS • O utput pulse duration: KS5221A = 0.5Hz, 1 sec

equal transister

Abstract: AS3LC2M16
Contextual Info: February 2002 Advance information AS3LC2M16 Š 2.7V to 3.3V 2M X 16 IntelliwattTM Super Low-Power CMOS Pseudo Static SRAM Features • • • • • • • AS3LC2M16 Intelliwatt active power circuitry Industrial, commercial and extended temperature ranges

Contextual Info: February 2002 Advance Information AS3V2M16 Š 2.7V to 3.3V 2M X 16 Super Low-Power CMOS Pseudo Static SRAM Features • • • • • • AS3V2M16 Industrial, commercial and extended temperature ranges Organization: 2M words x 16 bits 2.7V to 3.3V power supply range

M69030P

Abstract: Ceramic CAPACITOR KA5 M50196-001P Ceramic CAPACITOR KA4 M69030 M50196 vmc mitsubishi kwe 15h M5019 KA5 capacitor
Contextual Info: MITSUBISHI SOUND PROCESSORS M 5 0 1 9 6 -0 0 1 P DIGITAL KEY CONTROLLER DESCRIPTION M 5 0 1 9 6 -0 0 1 P is a digital key control IC fabricated w ith PIN CONFIGURATION TOP VIEW silicon-gate CMOS technology. M 5 0196-001 P converts frequencies by firs t A-D converting

NJM062

Abstract: ic njm4558 pin diagram
Contextual Info: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062

CT7605

Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
Contextual Info: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V

transisters

Contextual Info: NJM062/064 p R C l J-FET INPUT OPERATIONAL AMPLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION T h e N JM 0 6 2 /0 6 4 are J-F E T in p u t o p e ra tio n a l a m p lifie rs w hich w ere designed as lo w -p o w er versions o f the N JM 082. T h ey feature high in p u t im pedance, w ide bandw idth, h ig h slew rate, and low input

NJM062

Abstract: NJM082D NJM064 NJM082 transisters 429 dip8
Contextual Info: NJM062/064 J-FET INPUT OPERATIONAL AMPLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION The N JM 062/064 are J-FET input operational am plifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input

Contextual Info: NJM062/064 J-fET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T he N J M 062/064 are J-FET input operational am plifiers w hich were designed as low -p ow er versions o f the N JM 082. They feature high input impedance, w ide bandwidth, high slew rate, and low input

NJM062

Contextual Info: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. T hey feature high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062

Contextual Info: NJM062/064 E jw q J-FET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T h e N JM 0 6 2 /0 6 4 are J -F E T in p u t o p eratio n al a m p lifie rs w hich w ere desig n ed as lo w -p o w er versions o f the N JM 082. They feature high input im pedance, w ide bandw idth, high slew rate, and low input

serdes hdmi optical fibre

Abstract: camera-link to hd-SDI converter RS-485 spice camera-link to HDMI converter 10G BERT 40 pin lvds laptop connector camera-link to 3G-SDI converter hd-SDI deserializer LVDS HDMI cat5 specifications of tdr
Contextual Info: LVDS Owner’s Manual Including High-Speed CML and Signal Conditioning Fourth Edition 2008 High-Speed Interface Technologies Overview. 9-13 Network Topology. 15-17 SerDes Architectures. 19-29 Termination and Translation.31-38

battery c-s2

Abstract: 76C8128 566 function
Contextual Info: GM76C8128BSL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C8128SL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.7«m advanced CMOS technology and it provides high speed operation with minimum

at08a

Abstract: electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC
Contextual Info: ELECTRONIC BALLASTS, Prepare,y R, J.Haver Motorola Inc. Voltage fed and current fed resonant inverter circuits for fluorescent lamp ballasts are discussed and a design example is presented. ,:!$,. A typical fluorescent lamp is a l-to 2-inch diameter on its