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    EPA080AV Search Results

    EPA080AV Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EPA080AV
    		Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF 53.83KB 2

    EPA080AV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EPA080A

    Abstract: THICKNESS-75 900-131 EPA080AV
    Contextual Info: Excelics EPA080A/EPA080AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA080A AND 10.5dB FOR EPA080AV AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA080A/EPA080AV EPA080A EPA080AV 18GHz EPA080A 12GHz 18GHz EPA080AV. THICKNESS-75 900-131 PDF

    900-131

    Abstract: EPA080A EPA080AV
    Contextual Info: EPA080A/EPA080AV High Efficiency Heterojunction Power FET • • • • • +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA080A AND 10.5dB FOR EPA080AV AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		EPA080A/EPA080AV EPA080A EPA080AV 18GHz EPA080A EPA080AV 12GHz 900-131 PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF