EP8199S Search Results

Contextual Info: 131,072 x 16 HIGH-SPEED CMOS EPROM PRELIMINARY JULY 1996 FEATURES DESCRIPTION • Fast read access time: 45 ns • Industrial and commercial temperature ranges available • High-speed programming — Typically less than 16 seconds • +10% power supply tolerance

N1111

Contextual Info: ISSI 32,768 x 8 LOW VOLTAGE CMOS EPROM a d v a n c e f in f o r m a t io n JANUARY 1997 FEATURES • • • • Single 3.3V power supply Fast access time: 90 ns JEDEC-approved pinout Low power consumption — 100 nA max standby current — 25 mA (max) active current at 5 MHz

Contextual Info: 2,048-BIT SERIAL ELECTRICALLY ERASABLE FROM PRELIMINARY JANUARY 1997 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 nA • Hardware write protection — W rite control pin • Internally organized as 256 x 8 • Two-wire serial interface

IS27C020-90T

Abstract: IS27C020 IS27C020-12PL
Contextual Info: IS27C020 262,144 X 8 HIGH-SPEED CMOS EPROM PRELIMINARY JULY 1996 FEATURES DESCRIPTION • Fast read access time: 70 ns The ISSIIS27C020 is an ultra-high-speed 2 megabit 256Kword by 8-bit Ultraviolet Erasable CMOS Programmable Read-Only Memory. This superior random access capability

ISSI 543

Contextual Info: ISSI I S 2 7 H C 5 1 2 65,536 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast access time: 45 ns The IS S IIS27HC512 is an ultra-high-speed 512K-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It utilizes the standard JEDEC pinout making it functionally