ENE TECHNOLOGY Search Results

KB926QF D3

Abstract: kb926qf KB926QF B1 KB926QF D2 KB926QF c1 KB926D KB926QF e0 kb926qf c0 ene kb926qf d3 KB926QF A1
Contextual Info: KB926D Keyboard Controller Data Sheet Revision 1.1 Dec. 2008 ENE RESERVES THE RIGHT TO AMEND THIS DOCUMENT WITHOUT NOTICE AT ANY TIME. ENE ASSUMES NO RESPONSIBILITY FOR ANY ERRORS APPEAR IN THE DOCUMENT, AND ENE DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF ENE PRODUCTS

LTC1340

Abstract: LTC1429
Contextual Info: u i LTC134Q m TECHNOLOGY Low N oise, V o lta g e -B o o ste d V a ra c to r Driver F€flTUR€S D€SCRIPTIOf • G ene rate s 5V Varactor Drive from a 3 V Supply ■ Wide Supply Voltage Range: 2.7V to 6V ■ Req uires O n ly Three Extern al Com ponents

Contextual Info: MULTILAYER CHIP — CAPACITOR L4— L3 L2 II 1 W - L1-► M EC H A N IC A L G ENE RA L ELECTRICAL SPECIFICATION SPECIFICATION SYFER SIZE 1210 LENGTH L 1 m m 3 .2 0 ± 0 .3 0 WIDTH (W) m m 2 .5 0 ± 0 .3 0 CAPACITANCE MEASUREMENT : 1 .OVrms @ 1kHz

Infineon 80C167

Abstract: 80c167 80C167 Controller C166 AP16024
Contextual Info: Application Note, V 1.0, Feb. 2004 AP16024 C16x S o f tw ar e em u la t ion o f t h e I 2 C-bus us in g the G ene ra l Pur pose Timer U nit 1 . Micr ocon tro l lers N e v e r s t o p t h i n k i n g . C16x Revision History: 2004-02 V 1.0 Previous Version:

PS2701-4

Contextual Info: rz T SGS-THOMSON ^ 7 # M » iL iO T ( S iO O S D T V 8 2 D /F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 3V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.

TC1100C

Abstract: 380n
Contextual Info: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV64D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 4V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.

YEC YNV-C01

Abstract: YNV-C01 inverter ynv-c01 us18650* specifications DAC-07B037 VT6311S yNV-C01 inverter ATI SB450 cb714 UR18650F
Contextual Info: Chapter 1 System Specifications Features Below is a brief summary of the computer’s many feature: Platform and memroy Aspire 5030 TurionTM 64 ML-28/ML-30/ML-34/ML-37 processor or higher with 512 KB or 1 MB of L2 cache, supporting AMD PowerNow!TM technology and AMD HyperTransport technology

421 infra

Contextual Info: Ausgabe O I M •d M on O L M Dleee Auegebe w u rde m it dam Softwere8yetem Fram eM aker* eretellL Thle edition wea reellzed ualng the eoftw ere ayetem F rim e M e k e r*. Herauegegeben von Siem ens AQ, ■ereleh H i lb lt t t t r , M arke tingK o m m u n ika tio n , BalanetreSe 71,

microcontroller based projects

Abstract: CB22
Contextual Info: Information Technology Solutions Red Suite 3 RED SUITE 3 Red Suite is a highly inte- Development tools for ARM based Microcontrollers grated software develop- Professional tools for less than $1000 ment environment for ARMbased Microcontrollers, which

Thunderbolt

Contextual Info: APT20GT60KR A dvanced R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

APT30GT60

Contextual Info: IT J M APT30GT60BR A dvanced R ow er Te c h n o lo g y 6oov 55A Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT20GT60BR A dvanced I T J R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT30GT60KR A dvanced R ow er Te c h n o lo g y 6oov 55A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: A d v a n ced P o w er Te c h n o l o g y A P T 12080JVR 1200V 15A 0.800Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

R5C833

Abstract: ricoh r5c833 compal service manual compal IFL90 service manual KB925 BCM5906MKMLG IFL90 IFL91 ROBSON data alc268
Contextual Info: Chapter 1 System Description Specification IFL90 Service Manual 1. SCOPE This document describes the functional specifications for the Compal Notebook personal computer IFL91 series. The system is hardware and software compatible with the IBM PC/ATX personal

Contextual Info: ST23ZC04 Secure microcontroller with enhanced security with 4 Kbytes EEPROM and contactless-only interface Data brief Features Hardware features • Enhanced 8/16-bit ST23 CPU core with 16 Mbytes of linear addressable memory ■ 92 Kbytes of User ROM ■ 4 Kbytes of User RAM

Contextual Info: ST23ZR02 Secure microcontroller with enhanced security with 2 Kbytes EEPROM and dual interface Data brief Features Hardware features • Enhanced 8/16-bit ST23 CPU core with 16 Mbytes of linear addressable memory ■ 92 Kbytes of User ROM ■ 4 Kbytes of User RAM

Contextual Info: A d van c ed I T J R ow er Tec h n o lo g y APT20GF120BR 1200v 32A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and lowCollector-Emitter On voltage.

Contextual Info: A d van c ed I T J R ow er Tec h n o lo g y APT20GF120KR 1200v 32A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.

Contextual Info: APT50GF60BR A dvanced R ow er Te c h n o lo g y 600V 80A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and lowCollector-Em itter On voltage.

Contextual Info: INTEGRATED T O SH IB A QUAD CIRCUIT TECHNICAL EXCLUSIVE OR TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC86P/F/FN/FS DATA SILICON MONOLITHIC GATE The TC74AC86 is an advanced high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate and double - layer metal wiring C2MOS technology.

thyristor capacitive discharge ignition

Abstract: HIGH ENERGY IGNITION CIRCUIT lighter ignitor FLC22-135A FLC21 FLC21-135 FLC21-65 FLC22-135 FLC22-65 T092
Contextual Info: FLC21/22 FAMILY Application Specific Discretes A.S.D. LOW POWER FIRE LIGHTER CIRCUIT PRELIMINARY DATASHEET BENEFITS • SPACE SAVING THANKS TO MONOLITHIC FUNCTION INTEGRATION ■ HIGH R E L I A B I L I T Y WITH PLANAR TECHNOLOGY FEATURES ■ DEDICATED THYRISTOR STRUCTURE FOR

Contextual Info: A dvanced R ow er Te c h n o lo g y A P T 33G F 120B R 1200 v 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and lowCollector-Emitter On voltage.

Contextual Info: INTEGRATED T O SH IB A 9 -BIT TECHNICAL PARITY TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC74AC280P/F/FN DATA SILICON MONOLITHIC GENERATOR/CHECKER The TC74AC280 is an advanced high speed CMOS 9 - BIT PARITY GENERATOR fabricated with silicon gate and double layer metal wiring C2MOS technology.