ENA2007 Search Results
ENA2007 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ordering number : ENA2007A TF410 N-Channel JFET http://onsemi.com 40V, 50 to 130 A, 0.11mS, USFP Applications • Impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilities miniaturization in end products : 1.0mmx0.6mm×0.27mm max 0.3mm |
Original |
ena2007atf410--500pa--20v+1 | |
TF410Contextual Info: TF410 Ordering number : ENA2007 SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET TF410 Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilities miniaturization in end products : 1.0mmx0.6mm×0.27mm max 0.3mm |
Original |
ena2007tf410--500pa--20v+1 | |
TF410Contextual Info: TF410 Ordering number : ENA2007A SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET TF410 Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilities miniaturization in end products : 1.0mmx0.6mm×0.27mm max 0.3mm |
Original |
tf410ena2007a--500pa--20v+1 | |
TF410Contextual Info: TF410 Ordering number : ENA2007A SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET TF410 Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilities miniaturization in end products : 1.0mmx0.6mm×0.27mm max 0.3mm |
Original |
tf410ena2007a--500pa--20v+1 |