EMITTER PHOTOTRANSISTOR Search Results

fototransistor

Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260
Contextual Info: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung

phototransistor peak 550 nm

Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
Contextual Info: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung

sfh9260

Contextual Info: SIEMENS SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector Vorläufige Daten/Preliminary Data 1 Type SFH 9260 Anode 2 3 - 4 Emitter Collector 5 6 - O O

Contextual Info: 000^313 W 7ÔEÔcm «RHM ABSOLUTE MAXIMUM RATINGS TA=25°C Infrared Emitter Forward Current Reverse Voltage Power Dissipation 50mA 5V 80m W Vc Phototransistor Collector-Emitter Voltage Emitter-Collector Voltage Collector Power Dissipation 30V 5V 80m W CEO

TT 3034

Abstract: 1PM4 diode 1pm4
Contextual Info: T ñ E fl'm 000^311 norim 3bS • RHM OPTOELECTRONICS RPI-581 PHOTO INTERRUPTER ABSOLUTE MAXIMUM RATINGS T> =25°C Infrared Emitter Forward Current Reverse Voltage Power Dissipation 50 mA 5V 80mW ■f VR Pd Phototransistor Collector-Emitter Voltage Emitter-Collector Voltage

RPI-441

Abstract: RPI441
Contextual Info: •i 7 ñ 2 ñ cm OOCHaib b5b ■ RHN ROHm OPTOELECTRONICS RPI-441 PHOTO INTERRUPTER ABSOLUTE MAXIMUM RATINGS TA=25°C Infrared Emitter Forward Current Reverse Voltage Power Dissipation 50m A 5V 80m W Vr Pd Phototransistor Collector-Emitter Voltage Emitter-Col lector Voltage

fototransistor

Contextual Info: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly

RNI55W

Abstract: RNI30W
Contextual Info: Phototransistors 3mm Phototransistor RNI30W Water Clear Lens Absolution Maximun Rating Ta=25° Collector-to-Emitter breakdown voltage . 30V Emitter-to-Collector breakdown voltage . 5V

Contextual Info: 7 0 2 f i cl cl cì 0 0 0 = 0 0 3 ROHm TTfi • R H U OPTOELECTRONICS RPI-38 PHOTO INTERRUPTER ABSOLUTE MAXIMUM RATINGS Ta=25°C Infrared Emitter: Forward Current Reverse Voltage Power dissipation Phototransistor: Collector Emitter Voltage Emitter-Collector Voltage

XRHF51BFR

Abstract: XRNI82B
Contextual Info: Phototransistor 2.5x5mm XRNI82B Phototransistor Blue Transparent Lens Absolute Maximum Rating TA =25°° C Collector-to-Emitter Breakdown Voltage . 30V Emitter-to-Collector Breakdown Voltage . 5V

Contextual Info: Phototransistors 3mm Phototransistor XRNI30W Water Clear Lens Absolute Maximum Rating T A =25°° C Collector-to-Emitter Breakdown Voltage . 30V Emitter-to-Collector Breakdown Voltage . 5V

bar code reflective lens phototransistor

Abstract: DUAL EMITTER BAR CODE HEAD phototransistor with amplifier bar code lens phototransistor high resolution reflective lens phototransistor bar code phototransistor dual Phototransistor emitter phototransistor High Resolution Optical Reflective Sensor phototransistor visible light
Contextual Info: Single Emitter Bar Code Optic Head OTR480/490/482 FEATURES: • Single Emitter Bar Code / Fine Line Sensor • Better than 0.010” Resolution • Compact Size • Easily Ganged for Multiple Channels PRODUCT DESCRIPTION The OTR480/490/482 series combine a single emitter with a phototransistor in a compact low cost package containing a lens and

phototransistor 800 nm

Abstract: datasheet phototransistor Phototransistor EPH-3260 500LUX
Contextual Info: ELEKON Phototransistor EPH-3260 High reliable, silicon planer type phototransistor for small precision equipment. Applications: All kinds of sensor Specifications & Ratings: Parameter @ 25ºC Symbol Collector Emitter Voltage Emitter Collector Voltage Collector Current

Contextual Info: SMD Phototransistors 1.6mm x 0.8mm x 1.1mm XZRNI53W Phototransistor Water Clear Lens Absolute Maximum Rating T A =25°° C Collector-to-Emitter Breakdown Voltage . 30V Emitter-to-Collector Breakdown Voltage . 5V

10KW

Abstract: OP505 OP705A OP705B OP705C OP705D
Contextual Info: Product Bulletin OP705 March 1999 NPN Phototransistor with Base-Emitter Resistor Types OP705A, OP705B, OP705C, OP705D Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • • • • Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Contextual Info: 7û2fl[H el OOtHBlb b5b • RHÍ1 ABSOLUTE MAXIMUM RATINGS TA=25°C Infrared Em itter Forward Current Reverse Voltage Power Dissipation Phototransistor Collector-Emitter Voltage Emitter-Collector Voltage Collector Power Dissipation Operating Temperature

lens emitter phototransistor

Contextual Info: KOME PART NUMBER: PHOTOTRANSISTOR SPECIFICATION 3244 SC 3mm Phototransistor, Water Clear Lens Absolute Maximum Rating 25°Cunless otherwise notes Collector to Emitter Breakdown Voltage VBR CEO 30V Emitter to Collector Breakdown Voltage 5V Operating Temperature Range

Contextual Info: Gabellichtschranke Slotted Interrupter SFH 9300 Wesentliche Merkmale Features • • • • • Compact type • GaAs infrared emitter 950 nm • Silicon phototransistor detector with daylight-cutoff filter • Easy identification of emitter (clear component

Infrared Phototransistor

Abstract: QEE213 QSE243
Contextual Info: LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS 0.060 1.50 0.174 (4.44) R 0.030 (0.76) ;@;@ 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC Collector EMITTER 0.060 (1.52) Emitter 0.020 (0.51)

Fototransistor

Abstract: gabellichtschranke osram Phototransistor
Contextual Info: Gabellichtschranke Slotted Interrupter SFH 9300 Wesentliche Merkmale Features • • • • • Compact type • GaAs infrared emitter 950 nm • Silicon phototransistor detector with daylight-cutoff filter • Easy identification of emitter (clear component

QEE213

Abstract: QSE213 Infrared Phototransistor
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 PACKAGE DIMENSIONS 0.060 1.50 0.174 (4.44) R 0.030 (0.76) ;@;@ 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC Collector EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) Emitter 0.100 (2.54)

QEE213

Abstract: QSE243
Contextual Info: QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor Features Description • NPN Silicon Phototransistor with internal base-emitter resistance ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ Clear Plastic Package ■ Matching Emitter: QEE213

SFH614A

Contextual Info: SFH614A High Collector-Emitter Voltage Phototransistor Optocoupler FEATURES • High Isolation Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO=300 V • Standard Plastic DIP-4 Package • Underwriters Lab File #E52744 Dimensions in inches mm

IEC10

Abstract: SFH614A
Contextual Info: SFH614A High Collector-Emitter Voltage Phototransistor Optocoupler FEATURES • High Isolation Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO=300 V • Standard Plastic DIP-4 Package • Underwriters Lab File #E52744 Dimensions in inches mm