EMBEDDED C PROGRAMMING STRING Search Results

ABS16

Abstract: L72 H replacing
Contextual Info: PRELIMINARY APPLICATION NOTE HEW Embedded C Programming III - Optimization ECProgramIII_opt Introduction This application note, Embedded C Programming III, will cover the various topics on optimization. Two main areas are elaborated: Embedded C Programming Techniques and use of #pragma Directives

004C

Abstract: 007B C96F AA119
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM25-00311-1E F2MC-8L 8-BIT MICROCONTROLLERS C PROGRAMMING MANUAL FOR EMBEDDED SYSTEMS APPLICATIONS Introduction The F2MC-8L 8-bit microcontroller family is designed for use in embedded systems. This manual provides information on how to develop embedded systems application using the C96 F 2MC8L C compiler. It describes the effective C programming using the F2MC-8L architecture and the related

AM28F256A

Abstract: Am29Fxxx
Contextual Info: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

Contextual Info: AM D ii Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: FINAL Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ ■ CMOS low power consumption — 30 mA maximum active current ■ — 0.5 second typical chip program

AM28F010A

Abstract: TSR032-32-Pin
Contextual Info: FINAL Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

PEB 2261

Abstract: tl 2262 am
Contextual Info: F IN A L Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro D evices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

Contextual Info: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

Contextual Info: FINAL A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current

Contextual Info: F IN A L A m 2 8 F 0 1 0 A Advanced 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Devices DISTINCTIVE CHARACTERISTICS • High p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS lo w p o w e r c o n s u m p tio n

Contextual Info: Am28F020A 2 Megabit 262,144 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption ■ — 30 mA maximum active current

DG33 transistor

Contextual Info: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

Contextual Info: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: PRELIM INARY n Advanced Micro Devices AmCOOIAFLKA 1 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current

Contextual Info: a P R E LIM IN A R Y Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - ■ ■ ■ Prevents accidental data loss ■ Batteries not required for data storage Separate Attribute Memory - 512 byte EEPROM

Contextual Info: a Am 28 F 010 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time

AmC001AFLKA

Contextual Info: P R E L IM IN A R Y Advanced Micro Devices AmC002AFLKA 2 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High perform ance - 250 ns m aximum access time ■ CM OS low pow er consum ption - 25 m A typical active current X8 - 400 ^iA typical standby current

Contextual Info: FINAL AMDJ1 Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

interfacing of RAM and ROM with 8051

Abstract: 8051 datasheet microprocessor 8051 8051 basics c program 8051 with eeprom 8051 Family 8051 example programs 8051 examples interfacing 8051 with rom interfacing 8051 with eeprom
Contextual Info: Embedded Programming Using the 8051 & Jam Byte-Code October 2005, ver. 1.1 Introduction f 8051 Architecture Application Note 111 The 8051 family of microprocessors is relatively inexpensive, easy to use, and is a proven platform for managing simple processing tasks. This

Contextual Info: Am28FxxxA, 12.0 Volt Flash AMDB Device Read, Erase, and Program Operations, Write Operations Status INTRODUCTION This section contains descriptions about the device read, erase, and program operations, and write opera­ tion status of the Am29FxxxA, 12.0 volt family of Flash

am28F020

Abstract: 28F020
Contextual Info: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption

Contextual Info: Using the Command-Line Jam STAPL Solution for Device Programming AN-425-5.0 Application Note This application note describes Altera’s programming and configuration support using the Jam Standard Test and Programming Language STAPL for in-system programming (ISP) with PCs or embedded processors. It provides you with