EM - 400 Search Results

EM1C

Abstract: AM01 AM01A AM01Z EM01 EM01A EM01Z EM 1C
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM (A) Tj (°C)

BYY91

Abstract: BYY88 BYY92 BYY90 BYY32 BY154 BYY31 byy34 BYY35 BYY36
Contextual Info: Silicon Rectifiers S ilic o n R e c tifie rs nom. current 0,5 A and 1 A in epoxy packages Type M axim um Ratings Code JEDEC Code ITT Peak repetitive reverse current V rrl 1N 2070 — 1 N 4001 1 N 4002 1 N 4003 _ EM EM EM EM EM EM EM 1 N 4004 1 N 4005 1 N 4006

EM1C

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM

853f

Abstract: 4007D 4011d MEM780P 4016P 4007F MEM855P mu-6-0103 855F MEM851P
Contextual Info: MOSFETs C/MOS & MULTIFET DEVICES COMPOSANTS MOSFÈTs C/MOS & MULTIFET MOSFETs C/MOS & MULTIFET BAUELEMENTE MULTIFET SW ITCHES ELECTRICAL CHARACTERISTICS No. Part Ho. # *M EM 780P * M EM 780D * M EM 780F JF*MEM 851P *M EM 851D *M EM 851F ‘ M EM 853P *M EM 853D

diode IN 4007

Abstract: EM 4001 in 4007 in 4007 diode EM518 diode 1N 4001 diode 1N 4002 diode 4007 em 518 diode in 4007 datasheet
Contextual Info: 1N 4001 . 1N 4007, 1N 4007-1300 EM 513, EM 516, EM 518 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…2000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type

1n 4007

Abstract: CA 4007 Gleichrichter
Contextual Info: 1N 4001 . 1N 4007, 1N 4007-1300 EM 513, EM 516, EM 518 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…2000 V Plastic case Kunststoffgehäuse 5.1 -0.1 62.5 ±0.5

S46 SMD

Abstract: SPG8640 EM6607 SPG8640AN EM6617 EM6620 EM6621 EM6622 EM6625 EM6640
Contextual Info: R EM MICROELECTRONIC - MARIN SA EME66xx Hardware Description EM66xx IN-CIRCUIT EMULATOR HARDWARE DESCRIPTION Version 2.8 October 2005 Copyright 2005, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com EME66xx R Hardware Description Copyright © 2005, EM Microelectronic-Marin SA

Y1031

Abstract: equivalent transistor 2 SA 1469 tqfp 10x10 tray SO24 package m 4953 metal detector plans EM6503 EM6504 SO18 Package EM6517
Contextual Info: EM MICROELECTRONIC - MARIN SA EM65XX EM65XX Datasheet MFP versions of EM66XX Mask Rom EM Microelectronic-Marin SA Tel +41 32 755 51 11 Fax +41 32 755 54 03 http://www.emmicroelectronic.com Copyright 2005, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com

EM6503

Abstract: EM6504 EM6505 EM6517 EM6520 EM6521 EM6522 EM65XX EM6523 SO18 Package
Contextual Info: EM MICROELECTRONIC - MARIN SA EM65XX EM65XX Datasheet MFP versions of EM66XX Mask Rom EM Microelectronic-Marin SA Tel +41 32 755 51 11 Fax +41 32 755 54 03 http://www.emmicroelectronic.com 03/02 REV. H/447 Copyright  2002, EM Microelectronic-Marin SA

diode ry24

Abstract: UX-C2B diode zener RM25 FMPG5F fmgg2s FMPG2F RY24 RBV150S zener 3B2 RM25 zener diode
Contextual Info: Selection Guide Rectifier Diodes Type No. I F（AV） （A） VRM（V） 40 50 60 100 200 400 600 800 1,000 I FSM （A） SFPM-5＊ 0.9 2 4 30 SFPM-6＊ 1.0 2 4 45 AM01＊ 1.0 Z ― A 35 EM01＊ 1.0 Z ― A 45 EM 1＊ 1.0 Z ― A 45 EM 1＊ 1.0 EM 2＊ 1.2

RM1Z 05

Abstract: 11-Series RM1A
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. EM 2 EM 2A EM 2B RM 1Z RM 1 RM 1A RM 1B RM 1C RM 11A RM 11B RM 11C IFSM (A) Tj (°C) 50Hz Half-cycle Sinewave Single Shot Others IR (H)

tc524259

Contextual Info: PRELIMINARY 262, 144WORDS X4BITS MULTIPORT DRAM DESCRIPTION The TC524259BJ/BZ is a CMOS m ultiport m em ory equipped w ith a 262,144-words by 4-bits dynam ic random access m em ory RAM p o rt ami a 512-words by 4-bits static serial access m em ory (SAM) port. The

MSM65355

Abstract: QFP100-P-1420-BK4 OLMS65K 33DP4
Contextual Info: O K I Semiconductor MSM65355 OLMS-65K Series CMOS 8-Bit Microcontroller GENERAL DESCRIPTION The* MSM65355 is a high-perform ance 8-bit m icrocontroller that em ploysO K l original nX-H/ 5DCPU core. The M SM 65355 includes 16K bytes of program m em ory, 384 bytes of data m em ory, an LCD

BF241

Abstract: IC 41 BF bf240 TFK 241 bf 241 Kleine transistor bf UCB 10 Scans-0010445
Contextual Info: BF 240 * BF 241 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: BF 240: G eregelte AM- u. FM -Verstärkerstufen in Em itterschaltung BF 241 : AM- u. FM -Verstärkerstufen in Em itterschaltung Applications: BF 240: C ontrolled AM and FM am p lifier stages in com m on em itter configuration

communication between cpu and iop

Abstract: A1v9 M8286 M8289 M8088 M8089 m8288 M8284 A1V013 m8268
Contextual Info: P R s y im iA iiw in te T M8089 8 & 16-BIT HMOS I/O PROCESSOR Military 1 M byte Addressability High Speed DMA Capabilities Including I/O to Mem ory, M em ory to I/O , M em ory to M em ory, and I/O to I/O Supports LOCAL or REMOVE I/O Processing MiAPX 86, 88 Compatible: Rem oves I/O

Am186

Abstract: F00069 80C186 80L186 E86TM 8072-4 80C186 USER MANUAL
Contextual Info: PRELIMINARY Am186 EM/EMLV and Am188 EM/EMLV TM TM High Performance, 80C186-/80C188-Compatible and 80L186-/80L188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS TM n E86 family 80C186- and 80C188-compatible microcontrollers with enhanced bus interface

NPN Silicon Epitaxial Planar Transistor

Abstract: Zv-z 21 MX0912B350Y
Contextual Info: Data sheet sta tu s Preliminary specification date o t Issue July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION D ESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting

Contextual Info: NPN SILICON TRANSISTOR KSC5337 HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220 • High speed Switching • Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Em ltter Voltage Em itter-Base Voltage Collector Current DC

transistor bf 198

Abstract: BF 212 transistor BF198 TFK 214 TFK 544
Contextual Info: BF 198 Silizium-NPN-Planar HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am p lifier stages in com m on em itter configuration Besondere Merkmale: Features:

BSS71 MOTOROLA

Abstract: BSS71
Contextual Info: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 200 Vdc Collector-Base Voltage v CBO 200 Vdc Em itter-Base Voltage

equivalent of SL 100 NPN Transistor

Abstract: MX0912B250Y
Contextual Info: Data sha e t status Preliminary specification data o f Issue July 1990 MX0912B250Y NPN silicon planar epitaxial microwave power transistor APPLICATION DESCRIPTION • Interdigitated structure; high Intended for use in co m m on base em itter efficiency. • Diffused em itter ballasting

Contextual Info: KSC5026 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA TO -220 ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Sym bol Collector-B ase Voltage VcBO Collector-Em itter Voltage Em itter-Base Voltage VcEO C ollector Current (DC)

Contextual Info: What HEW LETT milUMPACKARD High-Performance IR Em itter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Em itter Series HSDL-54xx IR D etector Series Technical Data Features Description • Subminiature Flat Top and Dom e Package Size - 2x2 mm

Contextual Info: T O SH IB A TH50VSF1320/1321A A X B TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM ORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1320/1321AAXB is a mixed containing a package 2,097,152-bit SR A M and a 8,388,608bit fla s h m em ory. The SR A M ia organ ized as 262,144 w ords by 8 bits an d th e fla sh m em o ry is