ELECTROOPTICAL TRANSISTOR Search Results

GaAs 1000 nm Infrared Diode,

Contextual Info: Infrared Products Explanation o f Part Number: H I CD R B _5 © A A - @ ® • _c @ 1.Infrared products kinds: HIR: infrared emitter. HPD: photo diode. HPT: photo transistor. 2.Shape distinguish: B: bell round type. R: rectangular type. MIB: miniature bell type.

dual infrared transistor

Abstract: GaAs 1000 nm Infrared Diode,
Contextual Info: Infrared Products E x p lan atio n o f P a rt Num ber: H I B R l.lnfrared products kinds: 2.Shape distinguish: HIR: infrared emitter. HPD: photo diode. HPT: photo transistor. B: bell round type. R: rectangular type. MIB: m iniature bell type. CL: chip SM D type.

DIODE PP602

Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number

PDT323B-5

Contextual Info: Technical Data Sheet 5mm Low Profile Photo Darlington-Transistor T-1 3/4 PDT323B-5 Features ․Extra high radiant sensitivity ․Very low temperature drift ․Suitable for near infrared radiation ․High sensitivity ․Pb free ․The product itself will remain within RoHS compliant version.

Contextual Info: Technical Data Sheet 5mm Low Profile Photo Darlington-Transistor T-1 3/4 PDT323B-5 Features ․Extra high radiant sensitivity ․Very low temperature drift ․Suitable for near infrared radiation ․High sensitivity ․Pb free Descriptions ․PDT323B-5 is an extra high sensitive monolithic

TRANSISTOR DNH

Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number

LTK4N33

Contextual Info: S PECIA LIST Typ« ; Type Darington .Single Photo— transistor Phototransistor - .V Model No. LTK4N25V LTK4N26V LTK4N28V LTK4N35V LTK4N37V Absolute Maximum Ratings .• Collector-Emitter Isolation Current Transfer Internal Outline . Voltage Voltage Connection

TLP850

Abstract: TLP1240 TLP852 TLP851 TLP807 TLP809 TLP8 TLP1225 TLP1230
Contextual Info: F7 Electro-optical Characteristics Ta-25*C Classification Photo Darlington Transistor Output VCE MAX (V) lo MAX (nA) 250 Typ« No. Gap (mm) Slit Width (mm) lF(mA) V ce(V) TLP507A 3 1 30 10 2 30 TLP850 5 1 40 10 2 30 250 TLP851 5 0.5 20 10 2 30 250 MIN TLP852

audio filter vcf

Abstract: edge detector robot
Contextual Info: NJL5172K/72KF P0HTO REFLECTOR • GENERAL DESCRIPTION T he NJL5172K./72KF ¡is the single-in-line ■ OUTLINE typ. LED photo Reflector, which consist o f high output power Siphoto transistor. and Unit ! mm super miniature, super thin type and high sensitive

MCA255

Abstract: MCA230 mca231 MCA255 equivalent
Contextual Info: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 DESCRIPTION The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington transistor. The device is supplied in a standard plastic

pp601 40

Abstract: DIODE PP602 PS5022 PS3022 PS3072 PS3322 PS4032 PS5042 PS5042-2 PP701
Contextual Info: THROUGH-HOLE SHAPE - PHOTO TRANSISTOR n Photo Transistor Shape Part No. Ta= 25°C Features Wavelength of Peak Sensitivy l P TYP. v Photo Current IC MIN. TYP. V CE Spatial Distribution The typical distribution example of each shape is shown below Response

FillFactory

Abstract: BK7G18 glass STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250
Contextual Info: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern

FillFactory

Abstract: STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250 CMOS image sensor with global shutter
Contextual Info: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern

ADC hard radiation

Abstract: Star1000 Radiation Detector BK7G18 glass FillFactory STAR1000 1M Pixel Radiation Hard BK7G18 image sensor mono medical temperature sensor STAR1000BK7
Contextual Info: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern

MAX280

Abstract: SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
Contextual Info: *Customer: SPECIFICATION ITEM MODEL PART NO. Photo Transistor SSC-PTR202-IX0 [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Soldering profile 5. Outline dimension 6. Packing 7. Reel packing structure 8. Precaution for use

transistor c111

Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
Contextual Info: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

ISO-2859-1

Abstract: PT202MR0MP1 EIAJ C-3
Contextual Info: SPEC. No. SH AR P ISSUE DG036004A Oct/28/03 CONPOUND SEMICONDUCTOR DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE TECHNICAL LITERATURE FOR Photo Transistor MODEL No. PT202MR0MP1 * The technical literature is subject to be changed without notice *

everlight Ha 1.0

Contextual Info: 4 PIN LO ONG CR REEPAG GE SOP P P PHOTOT TRANSISTOR PHOTO P OCOUPL LER E EL101X-G Serie es Schematic F Features: • Free halo ogens compliiant • Current trransfer ratio CTR: 50 0~600% at IF =5mA, VCE =5V (CTR: 63 3~320% at IF =10mA, VCE =5V) • High isola

Transistor C1061

Abstract: NPN Transistor C1061 C1061 transistor transistor c1047 power Transistor C1061 C1061 npn c1050 transistor C1057 EL 4N35 035 MCT8 opto
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

2N3393

Abstract: CON10 MICRO ELECTRONICS ltd transistor
Contextual Info: 2N3393 NPN SILICON TRANSISTOR DESCRIPTION 2N3393 is NPN silicon planar transistor designed as small signal amplifiers. ABSOLUTE MAXIMUM RATINGS VcEO VcBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation

CL-200IR

Contextual Info: 表面実装型 チップフォトトランジスタ CPT-230シリーズ Surface Mountable Chip Photo-transistor CPT-230 Series 1.7 3.2 素子位置 Position of die (0.5) •Features 1. チップ型フォトトランジスタで上面 及び下面実装可能。

ic 8259

Abstract: OPB0642 opb064
Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode

Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode

Contextual Info: Si Photo-transistor Chip－TK S136PT 1. Scope ‧The specification applies to NPN silicon photo-transistor chips. ‧Type：TK S136PT. 2. Structure ‧NPN planar type. ‧Electrode N（collector）side ：Gold. P（base）side ：Aluminum. N（emitter）side ：Aluminum.